Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 2.15$ | 2.15$ |
5 - 9 | 2.04$ | 2.04$ |
10 - 15 | 1.93$ | 1.93$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 2.15$ | 2.15$ |
5 - 9 | 2.04$ | 2.04$ |
10 - 15 | 1.93$ | 1.93$ |
BUL312FP. Semiconductor material: silicon. FT: kHz. Function: High voltage fast switching. Max hFE gain: 13.5. Minimum hFE gain: 8. Collector current: 5A. Ic(pulse): 10A. Temperature: +150°C. Pd (Power Dissipation, Max): 36W. Assembly/installation: PCB through-hole mounting. Tf(max): 150 ns. Tf(min): 80 ns. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Type of transistor: NPN. Vcbo: 1150V. Saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 500V. Vebo: 9V. Number of terminals: 3. Quantity per case: 1. BE diode: no. CE diode: no. Quantity in stock updated on 11/01/2025, 13:25.
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