Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 1.74$ | 1.74$ |
5 - 9 | 1.66$ | 1.66$ |
10 - 24 | 1.57$ | 1.57$ |
25 - 49 | 1.48$ | 1.48$ |
50 - 99 | 2.35$ | 2.35$ |
100 - 228 | 3.03$ | 3.03$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 1.74$ | 1.74$ |
5 - 9 | 1.66$ | 1.66$ |
10 - 24 | 1.57$ | 1.57$ |
25 - 49 | 1.48$ | 1.48$ |
50 - 99 | 2.35$ | 2.35$ |
100 - 228 | 3.03$ | 3.03$ |
BUT11A. Semiconductor material: silicon. FT: kHz. Function: High voltage fast switching. Max hFE gain: 35. Minimum hFE gain: 10. Collector current: 5A. Ic(pulse): 10A. Temperature: +150°C. Pd (Power Dissipation, Max): 83W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 4us. Tf(min): 0.8us. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: NPN. Vcbo: 1000V. Saturation voltage VCE(sat): 1.3V. Collector/emitter voltage Vceo: 450V. Vebo: 9V. Number of terminals: 3. Quantity per case: 1. BE diode: no. CE diode: no. Quantity in stock updated on 27/12/2024, 23:25.
Information and technical help
Payment and delivery
Delivery in 2-3 days, with postal tracking!
All rights reserved, RPtronics, 2024.