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BUT11A

BUT11A
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 1.74$ 1.74$
5 - 9 1.66$ 1.66$
10 - 24 1.57$ 1.57$
25 - 49 1.48$ 1.48$
50 - 99 2.35$ 2.35$
100 - 228 3.03$ 3.03$
Quantity U.P
1 - 4 1.74$ 1.74$
5 - 9 1.66$ 1.66$
10 - 24 1.57$ 1.57$
25 - 49 1.48$ 1.48$
50 - 99 2.35$ 2.35$
100 - 228 3.03$ 3.03$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 228
Set of 1

BUT11A. Semiconductor material: silicon. FT: kHz. Function: High voltage fast switching. Max hFE gain: 35. Minimum hFE gain: 10. Collector current: 5A. Ic(pulse): 10A. Temperature: +150°C. Pd (Power Dissipation, Max): 83W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 4us. Tf(min): 0.8us. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: NPN. Vcbo: 1000V. Saturation voltage VCE(sat): 1.3V. Collector/emitter voltage Vceo: 450V. Vebo: 9V. Number of terminals: 3. Quantity per case: 1. BE diode: no. CE diode: no. Quantity in stock updated on 27/12/2024, 23:25.

Equivalent products :

Quantity in stock : 25
MJF18204

MJF18204

BE resistor: 50. Cost): 156pF. Quantity per case: 1. Semiconductor material: silicon. FT: 13 MHz. Fu...
MJF18204
BE resistor: 50. Cost): 156pF. Quantity per case: 1. Semiconductor material: silicon. FT: 13 MHz. Function: switching circuits. Max hFE gain: 35. Minimum hFE gain: 18. Collector current: 5A. Ic(pulse): 10A. Number of terminals: 3. Pd (Power Dissipation, Max): 35W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 175 ns. Tf(min): 110 ns. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Type of transistor: NPN. Operating temperature: -65...+175°C. Vcbo: 1200V. Saturation voltage VCE(sat): 0.83V. Collector/emitter voltage Vceo: 600V. Vebo: 10V. BE diode: no. CE diode: yes
MJF18204
BE resistor: 50. Cost): 156pF. Quantity per case: 1. Semiconductor material: silicon. FT: 13 MHz. Function: switching circuits. Max hFE gain: 35. Minimum hFE gain: 18. Collector current: 5A. Ic(pulse): 10A. Number of terminals: 3. Pd (Power Dissipation, Max): 35W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 175 ns. Tf(min): 110 ns. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Type of transistor: NPN. Operating temperature: -65...+175°C. Vcbo: 1200V. Saturation voltage VCE(sat): 0.83V. Collector/emitter voltage Vceo: 600V. Vebo: 10V. BE diode: no. CE diode: yes
Set of 1
2.44$ VAT incl.
(2.44$ excl. VAT)
2.44$

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2SD882

2SD882

Cost): 45pF. Quantity per case: 1. Semiconductor material: silicon. FT: 90 MHz. Max hFE gain: 400. M...
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TL072CP

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LED-SMD-R-0050

LED-SMD-R-0050

Diameter/dimensions: SMD 0603. Color: red. Max Continuous current: 20mA. Viewing angle: 120°. Mat...
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TIP122

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TIP122
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NDP7060

NDP7060

C(in): 2960pF. Cost): 1130pF. Channel type: N. Type of transistor: MOSFET. Id(imp): 225A. ID (T=25°...
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LM340T5

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Input: min 7.5V, max 35V. Dropout voltage: 2V. Function: Z-IC. Output voltage: 5V. Output polarity: ...
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LED-SMD-R-0220

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Diameter/dimensions: SMD 0805. Color: red. Viewing angle: 120°. Material: transparent. (cd): 220mcd...
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MOC3023M

MOC3023M

Diode IF: 60mA. Diode Power: 0.1W. Diode threshold voltage: 1.15V. Diode threshold voltage: 3V. Ih (...
MOC3023M
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UC3844N

UC3844N

RoHS: yes. Component family: Analog integrated circuit. Housing: PCB soldering. Housing: DIP8. Housi...
UC3844N
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