BUL45GD2G

Quantity	excl. VAT	VAT incl.
1 - 4	2.41$	2.41$
5 - 9	2.29$	2.29$
10 - 24	2.17$	2.17$
25 - 49	2.05$	2.05$
50 - 51	1.88$	1.88$

Quantity	U.P
1 - 4	2.41$	2.41$
5 - 9	2.29$	2.29$
10 - 24	2.17$	2.17$
25 - 49	2.05$	2.05$
50 - 51	1.88$	1.88$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 51

Set of 1

BUL45GD2G. Cost): 50pF. Semiconductor material: silicon. FT: 13 MHz. Function: High-speed, high-gain, bipolar NPN power transistor. Max hFE gain: 34. Minimum hFE gain: 22. Collector current: 5A. Ic(pulse): 10A. Pd (Power Dissipation, Max): 75W. RoHS: yes. Housing: TO-220. Housing (according to data sheet): TO220AB CASE 221A-09. Type of transistor: NPN. Vcbo: 700V. Saturation voltage VCE(sat): 0.28V. Maximum saturation voltage VCE(sat): 0.4V. Collector/emitter voltage Vceo: 400V. Vebo: 12V. Quantity per case: 1. Spec info: Built-in Efficient Antisaturation Network. BE diode: no. CE diode: yes. Quantity in stock updated on 11/01/2025, 13:25.

Technical documentation