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BUT11AX-PHI

BUT11AX-PHI
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[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 2.42$ 2.42$
5 - 9 2.30$ 2.30$
10 - 24 2.18$ 2.18$
25 - 49 2.06$ 2.06$
50 - 62 2.01$ 2.01$
Quantity U.P
1 - 4 2.42$ 2.42$
5 - 9 2.30$ 2.30$
10 - 24 2.18$ 2.18$
25 - 49 2.06$ 2.06$
50 - 62 2.01$ 2.01$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 62
Set of 1

BUT11AX-PHI. Semiconductor material: silicon. Function: S-L. Collector current: 5A. Pd (Power Dissipation, Max): 32W. Assembly/installation: PCB through-hole mounting. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Type of transistor: NPN. Vcbo: 1000V. Collector/emitter voltage Vceo: 450V. Quantity per case: 1. Spec info: Tf 170ns. Quantity in stock updated on 25/12/2024, 06:25.

Equivalent products :

Quantity in stock : 63
BUT11AF

BUT11AF

Semiconductor material: silicon. Function: S-L. Collector current: 5A. Pd (Power Dissipation, Max): ...
BUT11AF
Semiconductor material: silicon. Function: S-L. Collector current: 5A. Pd (Power Dissipation, Max): 20W. Assembly/installation: PCB through-hole mounting. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Type of transistor: NPN. Vcbo: 1000V. Collector/emitter voltage Vceo: 450V. Number of terminals: 3. Quantity per case: 1
BUT11AF
Semiconductor material: silicon. Function: S-L. Collector current: 5A. Pd (Power Dissipation, Max): 20W. Assembly/installation: PCB through-hole mounting. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Type of transistor: NPN. Vcbo: 1000V. Collector/emitter voltage Vceo: 450V. Number of terminals: 3. Quantity per case: 1
Set of 1
1.04$ VAT incl.
(1.04$ excl. VAT)
1.04$
Quantity in stock : 45
BUT11APX

BUT11APX

Semiconductor material: silicon. Max hFE gain: 35. Minimum hFE gain: 10. Collector current: 5A. Ic(p...
BUT11APX
Semiconductor material: silicon. Max hFE gain: 35. Minimum hFE gain: 10. Collector current: 5A. Ic(pulse): 10A. Pd (Power Dissipation, Max): 32W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: Power Transistor. Tf(max): 160 ns. Tf(min): 145 ns. Housing: TO-220FP. Housing (according to data sheet): TO-220F ( SOT186A ). Type of transistor: NPN. Operating temperature: -...+150°C. Vcbo: 1000V. Saturation voltage VCE(sat): 0.25V. Collector/emitter voltage Vceo: 450V. Number of terminals: 3. Quantity per case: 1. BE diode: no. CE diode: no
BUT11APX
Semiconductor material: silicon. Max hFE gain: 35. Minimum hFE gain: 10. Collector current: 5A. Ic(pulse): 10A. Pd (Power Dissipation, Max): 32W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: Power Transistor. Tf(max): 160 ns. Tf(min): 145 ns. Housing: TO-220FP. Housing (according to data sheet): TO-220F ( SOT186A ). Type of transistor: NPN. Operating temperature: -...+150°C. Vcbo: 1000V. Saturation voltage VCE(sat): 0.25V. Collector/emitter voltage Vceo: 450V. Number of terminals: 3. Quantity per case: 1. BE diode: no. CE diode: no
Set of 1
2.24$ VAT incl.
(2.24$ excl. VAT)
2.24$

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MJ15016-ONS

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Quantity per case: 1. Semiconductor material: silicon. FT: 0.8 MHz. Max hFE gain: 70. Minimum hFE ga...
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IRFZ44N

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KUY12

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Cost): 0.6pF. Quantity per case: 1. Semiconductor material: silicon. FT: 11 MHz. Function: S-L. Coll...
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STP55NF06

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TT2140

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MJ11032

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2N3055

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MJ15022-ONS

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Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: High Power Audio. Max hF...
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ESM336M400S1A5L360

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