Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 2.24$ | 2.24$ |
5 - 9 | 2.12$ | 2.12$ |
10 - 24 | 2.01$ | 2.01$ |
25 - 45 | 1.90$ | 1.90$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 2.24$ | 2.24$ |
5 - 9 | 2.12$ | 2.12$ |
10 - 24 | 2.01$ | 2.01$ |
25 - 45 | 1.90$ | 1.90$ |
BUT11APX. Semiconductor material: silicon. Max hFE gain: 35. Minimum hFE gain: 10. Collector current: 5A. Ic(pulse): 10A. Pd (Power Dissipation, Max): 32W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: Power Transistor. Tf(max): 160 ns. Tf(min): 145 ns. Housing: TO-220FP. Housing (according to data sheet): TO-220F ( SOT186A ). Type of transistor: NPN. Operating temperature: -...+150°C. Vcbo: 1000V. Saturation voltage VCE(sat): 0.25V. Collector/emitter voltage Vceo: 450V. Number of terminals: 3. Quantity per case: 1. BE diode: no. CE diode: no. Quantity in stock updated on 25/12/2024, 18:25.
Information and technical help
Payment and delivery
Delivery in 2-3 days, with postal tracking!
All rights reserved, RPtronics, 2024.