Transistors

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BUZ73LH. Drain-source voltage Uds [V]: 200V. Drain Current Id [A] @ 25°C: 7A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.4 Ohms @ 3.5A. Gate breakdown voltage Ugs [V]: 2V. Switch-on time ton [nsec.]: 20 ns. Switch-off delay tf[nsec.]: 130 ns. Ciss Gate Capacitance [pF]: 840pF. Maximum dissipation Ptot [W]: 40W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

Channel type: N. Type of transistor: MOSFET. Function: N MOSFET transistor. ID (T=100°C): 1.5A. ID (T=25°C): 2.4A. Idss (max): 2.4A. Pd (Power Dissipation, Max): 40W. On-resistance Rds On: 3 Ohms. Technology: V-MOS. Voltage Vds(max): 500V. Quantity per case: 1

Channel type: N. Type of transistor: MOSFET. Function: N MOSFET transistor. ID (T=100°C): 2A. ID (T=25°C): 3A. Idss (max): 3A. Pd (Power Dissipation, Max): 40W. On-resistance Rds On: 1.8 Ohms. Technology: V-MOS. Voltage Vds(max): 400V. Note: <57/115ns. Quantity per case: 1

RoHS: no. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BUZ76A. Drain-source voltage Uds [V]: 400V. Drain Current Id [A] @ 25°C: 2.7A. Drain current through resistor Rds [Ohm] @ Ids [A]: 2 Ohms @ 2A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 12 ns. Switch-off delay tf[nsec.]: 75 ns. Ciss Gate Capacitance [pF]: 650pF. Maximum dissipation Ptot [W]: 40W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

Channel type: N. Type of transistor: MOSFET. Function: <50/105ns. ID (T=100°C): 1.7A. ID (T=25°C): 2.7A. Idss (max): 2.7A. Pd (Power Dissipation, Max): 75W. On-resistance Rds On: 4 Ohms. Assembly/installation: PCB through-hole mounting. Technology: V-MOS. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 600V. Quantity per case: 1

C(in): 460pF. Cost): 55pF. Channel type: N. Trr Diode (Min.): 350 ns. Type of transistor: MOSFET. Function: BSIPMOS® Power Transistor, Enhancement mode. Id(imp): 11.5A. ID (T=100°C): 1.7A. ID (T=25°C): 2.9A. Idss (max): 100uA. IDss (min): 0.1uA. Pd (Power Dissipation, Max): 75W. On-resistance Rds On: 3 Ohms. Td(off): 50 ns. Td(on): 8 ns. Technology: V-MOS. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -50...+150°C. Voltage Vds(max): 600V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2.1V. Quantity per case: 1

Channel type: N. Type of transistor: MOSFET. Function: N MOSFET transistor. ID (T=100°C): 1.5A. ID (T=25°C): 2.1A. Idss (max): 2.1A. Pd (Power Dissipation, Max): 40W. On-resistance Rds On: 3 Ohms. Technology: V-MOS (F). Voltage Vds(max): 800V. Note: <100/220ns. Quantity per case: 1

Channel type: N. Type of transistor: MOSFET. Function: V-MOS. ID (T=25°C): 3.2A. Idss (max): 3.2A. Pd (Power Dissipation, Max): 78W. Voltage Vds(max): 800V. Quantity per case: 1

Channel type: N. Type of transistor: MOSFET. Function: N MOSFET transistor. ID (T=100°C): 2.8A. ID (T=25°C): 4.5A. Idss (max): 4.5A. Pd (Power Dissipation, Max): 75W. On-resistance Rds On: 1.6 Ohms. Technology: V-MOS. Voltage Vds(max): 600V. Quantity per case: 1

C(in): 734pF. Cost): 300pF. Channel type: P. Quantity per case: 1. Type of transistor: MOSFET. Function: AUDIO POWER Amplifier MOSFET. ID (T=25°C): 8A. Idss (max): 10mA. Pd (Power Dissipation, Max): 125W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 60 ns. Td(on): 120ns. Technology: P-Channel MOSFET Power Transistor. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Operating temperature: -55...+150°C. Voltage Vds(max): 200V. Gate/source voltage Vgs: 14V. Gate/source voltage (off) max.: 1.5V. Gate/source voltage (off) min.: 0.15V. Number of terminals: 2. Spec info: complementary transistor (pair) BUZ901. Drain-source protection : no. G-S Protection: no

Channel type: N. Type of transistor: MOSFET. Function: N MOSFET transistor. ID (T=100°C): 2.8A. ID (T=25°C): 4A. Idss (max): 4A. Pd (Power Dissipation, Max): 75W. On-resistance Rds On: 2 Ohms. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 600V. Number of terminals: 3. Quantity per case: 1

Channel type: N. Type of transistor: MOSFET. Function: N MOSFET transistor. ID (T=100°C): 2.8A. ID (T=25°C): 4A. Idss (max): 4A. Pd (Power Dissipation, Max): 35W. On-resistance Rds On: 2 Ohms. Technology: TO-220F. Voltage Vds(max): 600V. Quantity per case: 1

Channel type: N. Type of transistor: MOSFET. Function: N MOSFET transistor. ID (T=100°C): 5A. ID (T=25°C): 8A. Idss (max): 8A. Pd (Power Dissipation, Max): 150W. On-resistance Rds On: 0.9 Ohms. Assembly/installation: PCB through-hole mounting. Technology: V-MOS. Housing: TO-220. Voltage Vds(max): 600V. Quantity per case: 1

Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: N MOSFET transistor. Id(imp): 32A. ID (T=100°C): 5A. ID (T=25°C): 8A. Idss (max): 10uA. IDss (min): 0.1uA. Pd (Power Dissipation, Max): 150W. On-resistance Rds On: 0.9 Ohms. Technology: V-MOS. Housing: TO-220. Voltage Vds(max): 600V

Type of transistor: Power Transistor. Polarity: NPN. Collector-Emitter Voltage VCEO: 400V. Collector current: 8A. Power: 80W. Max frequency: 4MHz. Housing: TO-220AB (MJE13007)

Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: Logic Level Enhancement Mode. Id(imp): 156A. ID (T=25°C): 52A. Idss (max): 52A. Pd (Power Dissipation, Max): 75W. On-resistance Rds On: 0.011 Ohms. Assembly/installation: surface-mounted component (SMD). Technology: Field Effect Power MOSFET. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Voltage Vds(max): 30 v

C(in): 40pF. Cost): 14pF. Channel type: N. Function: Dual IGBT transistor (Isolated). Collector current: 200A. Ic(pulse): 400A. Ic(T=100°C): 200A. Dimensions: 108x62x31mm. Pd (Power Dissipation, Max): 1500W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 300 ns. Td(on): 250 ns. Housing: Other. Housing (according to data sheet): Other. Operating temperature: -40...+125°C. Saturation voltage VCE(sat): 2.5V. Collector/emitter voltage Vceo: 1200V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 6V. Number of terminals: 7. Spec info: High Power Switching. CE diode: no. Germanium diode: no

Quantity per case: 1. Semiconductor material: silicon. FT: 15 MHz. Collector current: 4A. Pd (Power Dissipation, Max): 40W. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: PNP. Vcbo: 70V. Collector/emitter voltage Vceo: 50V. Spec info: complementary transistor (pair) CSD1133

C(in): 260pF. Cost): 140pF. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Id(imp): 57A. ID (T=25°C): 5A. Idss (max): 1uA. Number of terminals: 6. Temperature: +150°C. Pd (Power Dissipation, Max): 17W. On-resistance Rds On: 0.024...0.042 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 4.2 ns. Td(on): 2.8 ns. Technology: N-Channel NexFET™ Power MOSFET. Housing: WSON6. Housing (according to data sheet): 2mm × 2mm plastic case. Operating temperature: -55...+150°C. Voltage Vds(max): 30 v. Gate/source voltage Vgs: 8V. Vgs(th) max.: 1.8V. Vgs(th) min.: 0.9V. Drain-source protection : yes. G-S Protection: no

Cost): 130pF. Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Minimum hFE gain: 60. Collector current: 10A. Ic(pulse): 20A. Marking on the case: D44H11. Equivalents: Fairchild D44H11TU, KSE44H11TU. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 50W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Silicon Transistor'. Tf(max): 140 ns. Tf(min): 140 ns. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 80V. Saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 80V. Vebo: 5V. Spec info: complementary transistor (pair) D45H11. BE diode: no. CE diode: yes

RoHS: yes. Housing: PCB soldering. Housing: TO-220. Housing (JEDEC standard): TO-220. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: D44H11G. Collector-emitter voltage Uceo [V]: 80V. Collector current Ic [A], max.: 10A. Cutoff frequency ft [MHz]: 50 MHz. Maximum dissipation Ptot [W]: 70W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: NPN power transistor

RoHS: no. Housing: PCB soldering. Housing: TO-220AB. Housing (JEDEC standard): TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: D44H8. Collector-emitter voltage Uceo [V]: 60V. Collector current Ic [A], max.: 10A. Cutoff frequency ft [MHz]: 50 MHz. Maximum dissipation Ptot [W]: 50W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: NPN power transistor. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: NPN. Maximum saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 60V

RoHS: yes. Housing: PCB soldering. Housing: TO-220. Housing (JEDEC standard): TO-220. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: D44H8G. Collector-emitter voltage Uceo [V]: 60V. Collector current Ic [A], max.: 10A. Cutoff frequency ft [MHz]: 50 MHz. Maximum dissipation Ptot [W]: 70W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: NPN power transistor

Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: S-L, Low-sat. Max hFE gain: 35. Minimum hFE gain: 20. Collector current: 15A. Ic(pulse): 20A. Number of terminals: 3. Pd (Power Dissipation, Max): 83W. Assembly/installation: PCB through-hole mounting. Tf(max): 90 ns. Housing: TO-220. Housing (according to data sheet): TO-220AC. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 100V. Saturation voltage VCE(sat): 0.4V. Maximum saturation voltage VCE(sat): 1.2V. Collector/emitter voltage Vceo: 80V. Vebo: 7V. Spec info: complementary transistor (pair) D45VH10. CE diode: yes

Quantity per case: 1. Semiconductor material: silicon. FT: 40 MHz. Max hFE gain: 60. Minimum hFE gain: 40. Collector current: 10A. Ic(pulse): 20A. Equivalents: Fairchild--D45H11TU, KSE45H11TU, ON Semi. Number of terminals: 3. Pd (Power Dissipation, Max): 50W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 100 ns. Tf(min): 100 ns. Housing: TO-220. Housing (according to data sheet): TO-220AB. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 80V. Maximum saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 80V. Vebo: 5V. Spec info: pair D44H11. BE diode: no. CE diode: no