BUT18AF

Quantity	excl. VAT	VAT incl.
1 - 4	1.08$	1.08$
5 - 9	1.03$	1.03$
10 - 24	0.97$	0.97$
25 - 31	0.92$	0.92$

Quantity	U.P
1 - 4	1.08$	1.08$
5 - 9	1.03$	1.03$
10 - 24	0.97$	0.97$
25 - 31	0.92$	0.92$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 31

Set of 1

BUT18AF. Semiconductor material: silicon. FT: 10 MHz. Max hFE gain: 35. Minimum hFE gain: 10. Collector current: 6A. Ic(pulse): 12A. Temperature: +150°C. Pd (Power Dissipation, Max): 33W. Assembly/installation: PCB through-hole mounting. Tf(max): 0.8us. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Type of transistor: NPN. Vcbo: 1000V. Saturation voltage VCE(sat): 1.5V. Collector/emitter voltage Vceo: 450V. Vebo: 9V. Number of terminals: 3. Quantity per case: 1. Function: high voltage, high speed. Quantity in stock updated on 11/01/2025, 13:25.

Equivalent products :

Out of stock

BUT18AF-PHI

Semiconductor material: silicon. FT: 10 MHz. Function: S-L. Collector current: 6A. Pd (Power Dissipa...

Set of 1

4.08$ VAT incl.
(4.08$ excl. VAT)

4.08$