Transistors

RoHS: no. Housing: PCB soldering. Housing: ISOWATT-218. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BU508DFI. Collector-emitter voltage Uceo [V]: 700V. Collector current Ic [A], max.: 8A. Cutoff frequency ft [MHz]: 7 MHz. Maximum dissipation Ptot [W]: 50W. Component family: high voltage NPN transistor. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

Semiconductor material: silicon. Function: TV-SN. Collector current: 8A. Pd (Power Dissipation, Max): 62W. Type of transistor: NPN. Vcbo: 1100V. Collector/emitter voltage Vceo: 480V. Quantity per case: 1

RoHS: no. Component family: NPN bipolar transistor. Housing: PCB soldering. Housing: TO-3. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 330V/200V. Collector current Ic [A], max.: 7A. Maximum dissipation Ptot [W]: 90W

RoHS: no. Component family: NPN bipolar transistor. Housing: PCB soldering. Housing: TO-3. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 330V/ 200V. Collector current Ic [A], max.: 7A. Maximum dissipation Ptot [W]: 90W

Darlington transistor?: yes. Semiconductor material: silicon. FT: kHz. Function: Darlington transistor. High voltage and fast switching. Collector current: 8A. Ic(pulse): 15A. Temperature: +150°C. Pd (Power Dissipation, Max): 60W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: NPN. Vcbo: 400V. Saturation voltage VCE(sat): 1.5V. Collector/emitter voltage Vceo: 200V. Vebo: 6V. Quantity per case: 2. Number of terminals: 3

Darlington transistor?: yes. Semiconductor material: silicon. Collector current: 5A. Pd (Power Dissipation, Max): 42W. Assembly/installation: PCB through-hole mounting. Housing: TO-220FP. Housing (according to data sheet): TO-220FH. Type of transistor: NPN. Vcbo: 1400V. Collector/emitter voltage Vceo: 700V. Quantity per case: 1. Spec info: TO-220FH

BE resistor: 42 Ohms. Darlington transistor?: yes. Semiconductor material: silicon. FT: kHz. Max hFE gain: 230. Minimum hFE gain: 60. Collector current: 8A. Ic(pulse): 10A. Temperature: +150°C. Pd (Power Dissipation, Max): 62W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.8us. Tf(min): 0.2us. Housing (according to data sheet): ISOWATT218FX. Type of transistor: NPN. Vcbo: 1400V. Saturation voltage VCE(sat): 1.6V. Collector/emitter voltage Vceo: 700V. Vebo: 5V. Quantity per case: 2. Number of terminals: 2. Spec info: ICM--(tp < 5ms). Housing: TO-3PF (SOT399, 2-16E3A)

BE resistor: 260 Ohms. Darlington transistor?: yes. Semiconductor material: silicon. Collector current: 8A. Ic(pulse): 10A. Pd (Power Dissipation, Max): 62W. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): ISOWATT218. Type of transistor: NPN. Vcbo: 1400V. Collector/emitter voltage Vceo: 700V. Vebo: 5V. Quantity per case: 2. Number of terminals: 3. Function: hFE 60...230, insulated plastic housing. Spec info: fall time 0.8us. Housing: TO-3PF (SOT399, 2-16E3A)

RoHS: yes. Housing: PCB soldering. Housing: TO-247. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BU941ZP. Collector-emitter voltage Uceo [V]: 350V. Collector current Ic [A], max.: 15A. Maximum dissipation Ptot [W]: 155W. Component family: high voltage NPN transistor. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +175°C

Darlington transistor?: yes. Semiconductor material: silicon. Function: S-L. Collector current: 15A. Pd (Power Dissipation, Max): 65W. Type of transistor: NPN. Vcbo: 500V. Collector/emitter voltage Vceo: 400V. Note: >300. Quantity per case: 1

Darlington transistor?: yes. Semiconductor material: silicon. Function: fall time 625ns. Max hFE gain: 3400. Minimum hFE gain: 500. Collector current: 10A. Assembly/installation: surface-mounted component (SMD). Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Type of transistor: NPN. Collector/emitter voltage Vceo: 350V. Quantity per case: 1. Spec info: 360-450V Clamping

Semiconductor material: silicon. FT: 20 MHz. Collector current: 0.5A. Pd (Power Dissipation, Max): 20W. Housing: D-PAK ( TO-252 ). Type of transistor: NPN. Vcbo: 1000V. Collector/emitter voltage Vceo: 450V. Quantity per case: 1. Spec info: HV-POWER

Darlington transistor?: no. Semiconductor material: silicon. FT: kHz. Collector current: 30A. Ic(pulse): 60A. Temperature: +150°C. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'High Voltage Multi Epitaxial Planar technology'. Tf(max): 0.1us. Tf(min): 0.05us. Housing: TO-247. Housing (according to data sheet): TO-247. Type of transistor: NPN. Vcbo: 1000V. Saturation voltage VCE(sat): 0.8V. Collector/emitter voltage Vceo: 450V. Vebo: 7V. Number of terminals: 3. Quantity per case: 1. Spec info: High voltage fast-switching power transistor

Semiconductor material: silicon. FT: kHz. Function: High voltage fast switching. Max hFE gain: 14. Minimum hFE gain: 7. Collector current: 14A. Ic(pulse): 18A. Temperature: +150°C. Pd (Power Dissipation, Max): 70W. Assembly/installation: PCB through-hole mounting. Tf(max): 220 ns. Tf(min): 110 ns. Housing: ISOWATT218FX. Housing (according to data sheet): TO-218-ISO. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 1.5V. Collector/emitter voltage Vceo: 700V. Vebo: 10V. Number of terminals: 3. Quantity per case: 1. Note: hi-res, monitor 19. Spec info: Icmax--18A <5mS

Semiconductor material: silicon. FT: kHz. Function: High Voltage Fast Switching Transistor. Max hFE gain: 14. Minimum hFE gain: 5. Collector current: 16A. Ic(pulse): 22A. Temperature: +150°C. Pd (Power Dissipation, Max): 200W. Assembly/installation: PCB through-hole mounting. Tf(max): 210 ns. Tf(min): 110 ns. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-218 ( SOT93 ). Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 1.5V. Collector/emitter voltage Vceo: 700V. Vebo: 10V. Number of terminals: 3. Quantity per case: 1. Spec info: Icm.22A <5ms

Semiconductor material: silicon. Function: 'Hi-res'. Collector current: 5A. Pd (Power Dissipation, Max): 50W. Type of transistor: NPN. Vcbo: 1500V. Collector/emitter voltage Vceo: 700V. Quantity per case: 1. Spec info: MONITOR

Semiconductor material: silicon. FT: kHz. Function: 'Hi-res'. Max hFE gain: 9. Minimum hFE gain: 2.5. Collector current: 5A. Ic(pulse): 12A. Temperature: +150°C. Pd (Power Dissipation, Max): 44W. Assembly/installation: PCB through-hole mounting. Tf(max): 400 ns. Tf(min): 200 ns. Housing: ISOWATT218FX. Housing (according to data sheet): ISOWATT218. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 1.5V. Collector/emitter voltage Vceo: 700V. Vebo: 10V. Number of terminals: 3. Quantity per case: 1. Spec info: MONITOR

Semiconductor material: silicon. Function: 'Hi-res'. Max hFE gain: 6. Minimum hFE gain: 4. Collector current: 8A. Ic(pulse): 15A. Pd (Power Dissipation, Max): 60W. Tf (type): 190 ns. Housing: ISOWATT218. Housing (according to data sheet): ISOWATT218. Type of transistor: NPN. Vcbo: 1700V. Maximum saturation voltage VCE(sat): 1.5V. Collector/emitter voltage Vceo: 700V. Vebo: 10V. Quantity per case: 1. Spec info: MONITOR. BE diode: no. CE diode: no

Semiconductor material: silicon. Function: 'Hi-res'. Collector current: 10A. Pd (Power Dissipation, Max): 57W. Type of transistor: NPN. Vcbo: 1500V. Collector/emitter voltage Vceo: 700V. Note: MONITOR. Quantity per case: 1. Spec info: Ts 2.1/3.1us

Channel type: N. Type of transistor: MOSFET. Function: N MOSFET transistor. ID (T=100°C): 7.5A. ID (T=25°C): 13.5A. Idss (max): 13.5A. Pd (Power Dissipation, Max): 40W. On-resistance Rds On: 0.12 Ohms. Technology: V-MOS. Voltage Vds(max): 50V. Note: Logic-Level. Quantity per case: 1

C(in): 750pF. Cost): 90pF. Channel type: N. Conditioning: plastic tube. Drain-source protection : diode. Trr Diode (Min.): 1200 ns. Type of transistor: MOSFET. Function: Power MOSFET SMPS. Id(imp): 16A. ID (T=100°C): 2.5A. ID (T=25°C): 4A. Idss (max): 20uA. IDss (min): 2uA. Temperature: +150°C. Pd (Power Dissipation, Max): 100W. On-resistance Rds On: 2.1 Ohms. Assembly/installation: PCB through-hole mounting. Td(off): 100 ns. Td(on): 10 ns. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 600V. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 2.1V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 50. G-S Protection: no

C(in): 2230pF. Cost): 510pF. Channel type: N. Conditioning: plastic tube. Drain-source protection : diode. Trr Diode (Min.): 62 ns. Type of transistor: MOSFET. Id(imp): 347A. ID (T=100°C): 61A. ID (T=25°C): 75A. Idss (max): 1uA. IDss (min): 0.05uA. Pd (Power Dissipation, Max): 166W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 84 ns. Td(on): 18 ns. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): SOT-404. Operating temperature: -55...+175°C. Voltage Vds(max): 55V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. On-resistance Rds On: 0.009 Ohms. G-S Protection: no

C(in): 1200pF. Cost): 290pF. Channel type: N. Conditioning: plastic tube. Trr Diode (Min.): 45 ns. Type of transistor: MOSFET. Id(imp): 217A. ID (T=100°C): 38A. ID (T=25°C): 54A. Idss (max): 10uA. IDss (min): 0.05uA. Pd (Power Dissipation, Max): 118W. On-resistance Rds On: 17m Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 70 ns. Td(on): 15 ns. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): SOT-404. Operating temperature: -55...+175°C. Voltage Vds(max): 55V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no

C(in): 440pF. Cost): 90pF. Channel type: N. Conditioning: plastic tube. Trr Diode (Min.): 33 ns. Type of transistor: MOSFET. Id(imp): 81A. ID (T=100°C): 14A. ID (T=25°C): 20A. Idss (max): 500uA. IDss (min): 0.05uA. Temperature: +175°C. Pd (Power Dissipation, Max): 62W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 28 ns. Td(on): 10 ns. Technology: TrenchMOS logic level POWER MOSFET. Housing: TO-220. Housing (according to data sheet): SOT-78 ( TO220AB ). Voltage Vds(max): 55V. Gate/source voltage Vgs: 10V. Vgs(th) max.: 2V. Vgs(th) min.: 1V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 50. On-resistance Rds On: 0.064 Ohms. Function: Automotive, power switching, 12V and 24V Motor. Spec info: IDM--81A (Tmb 25°C; pulsed). Drain-source protection : yes. G-S Protection: no

Semiconductor material: silicon. Max hFE gain: 32. Minimum hFE gain: 10. Collector current: 4A. Ic(pulse): 8A. Temperature: +150°C. Pd (Power Dissipation, Max): 70W. Tf (type): 0.2us. Type of transistor: NPN. Vcbo: 700V. Saturation voltage VCE(sat): 0.5V. Maximum saturation voltage VCE(sat): 1.5V. Collector/emitter voltage Vceo: 400V. Quantity per case: 1. Function: high voltage, fast-switching. Spec info: TO-220. BE diode: no. CE diode: yes