BUL216

Quantity	excl. VAT	VAT incl.
1 - 4	2.07$	2.07$
5 - 9	1.97$	1.97$
10 - 24	1.86$	1.86$
25 - 49	1.76$	1.76$
50 - 56	1.72$	1.72$

Quantity	U.P
1 - 4	2.07$	2.07$
5 - 9	1.97$	1.97$
10 - 24	1.86$	1.86$
25 - 49	1.76$	1.76$
50 - 56	1.72$	1.72$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 56

Set of 1

BUL216. Semiconductor material: silicon. Max hFE gain: 40. Minimum hFE gain: 10. Collector current: 4A. Ic(pulse): 6A. Temperature: +150°C. Pd (Power Dissipation, Max): 90W. Assembly/installation: PCB through-hole mounting. Tf(max): 720 ns. Tf(min): 450 ns. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: NPN. Vcbo: 1600V. Saturation voltage VCE(sat): 1V. Maximum saturation voltage VCE(sat): 3V. Collector/emitter voltage Vceo: 800V. Vebo: 9V. Function: high voltage fast switching, for switching power supplies. Quantity per case: 1. BE diode: no. CE diode: no. Quantity in stock updated on 25/12/2024, 16:25.

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Delivery in 2-3 days, with postal tracking!