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BUT11AF-F

BUT11AF-F
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1 - 2 2.78$ 2.78$
Quantity U.P
1 - 2 2.78$ 2.78$
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Quantity in stock : 2
Set of 1

BUT11AF-F. Semiconductor material: silicon. Function: S-L. Collector current: 5A. Pd (Power Dissipation, Max): 20W. Assembly/installation: PCB through-hole mounting. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Type of transistor: NPN. Vcbo: 1000V. Collector/emitter voltage Vceo: 450V. Number of terminals: 3. Quantity per case: 1. Quantity in stock updated on 27/12/2024, 23:25.

Equivalent products :

Quantity in stock : 11
MJE18008

MJE18008

C(in): 1750pF. Cost): 100pF. Quantity per case: 1. Semiconductor material: silicon. FT: 13MHz. Funct...
MJE18008
C(in): 1750pF. Cost): 100pF. Quantity per case: 1. Semiconductor material: silicon. FT: 13MHz. Function: Switching mode Power Supply Applications. Max hFE gain: 14. Minimum hFE gain: 34. Collector current: 8A. Ic(pulse): 16A. Pd (Power Dissipation, Max): 120W. RoHS: yes. Housing: TO-220. Housing (according to data sheet): TO-220AB. Type of transistor: NPN. Operating temperature: -60...+150°C. Vcbo: 1000V. Saturation voltage VCE(sat): 0.3V. Maximum saturation voltage VCE(sat): 0.6V. Collector/emitter voltage Vceo: 450V. BE diode: no. CE diode: no
MJE18008
C(in): 1750pF. Cost): 100pF. Quantity per case: 1. Semiconductor material: silicon. FT: 13MHz. Function: Switching mode Power Supply Applications. Max hFE gain: 14. Minimum hFE gain: 34. Collector current: 8A. Ic(pulse): 16A. Pd (Power Dissipation, Max): 120W. RoHS: yes. Housing: TO-220. Housing (according to data sheet): TO-220AB. Type of transistor: NPN. Operating temperature: -60...+150°C. Vcbo: 1000V. Saturation voltage VCE(sat): 0.3V. Maximum saturation voltage VCE(sat): 0.6V. Collector/emitter voltage Vceo: 450V. BE diode: no. CE diode: no
Set of 1
3.39$ VAT incl.
(3.39$ excl. VAT)
3.39$
Quantity in stock : 62
BUT11AX-PHI

BUT11AX-PHI

Semiconductor material: silicon. Function: S-L. Collector current: 5A. Pd (Power Dissipation, Max): ...
BUT11AX-PHI
Semiconductor material: silicon. Function: S-L. Collector current: 5A. Pd (Power Dissipation, Max): 32W. Assembly/installation: PCB through-hole mounting. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Type of transistor: NPN. Vcbo: 1000V. Collector/emitter voltage Vceo: 450V. Quantity per case: 1. Spec info: Tf 170ns
BUT11AX-PHI
Semiconductor material: silicon. Function: S-L. Collector current: 5A. Pd (Power Dissipation, Max): 32W. Assembly/installation: PCB through-hole mounting. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Type of transistor: NPN. Vcbo: 1000V. Collector/emitter voltage Vceo: 450V. Quantity per case: 1. Spec info: Tf 170ns
Set of 1
2.42$ VAT incl.
(2.42$ excl. VAT)
2.42$
Quantity in stock : 45
BUT11APX

BUT11APX

Semiconductor material: silicon. Max hFE gain: 35. Minimum hFE gain: 10. Collector current: 5A. Ic(p...
BUT11APX
Semiconductor material: silicon. Max hFE gain: 35. Minimum hFE gain: 10. Collector current: 5A. Ic(pulse): 10A. Pd (Power Dissipation, Max): 32W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: Power Transistor. Tf(max): 160 ns. Tf(min): 145 ns. Housing: TO-220FP. Housing (according to data sheet): TO-220F ( SOT186A ). Type of transistor: NPN. Operating temperature: -...+150°C. Vcbo: 1000V. Saturation voltage VCE(sat): 0.25V. Collector/emitter voltage Vceo: 450V. Number of terminals: 3. Quantity per case: 1. BE diode: no. CE diode: no
BUT11APX
Semiconductor material: silicon. Max hFE gain: 35. Minimum hFE gain: 10. Collector current: 5A. Ic(pulse): 10A. Pd (Power Dissipation, Max): 32W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: Power Transistor. Tf(max): 160 ns. Tf(min): 145 ns. Housing: TO-220FP. Housing (according to data sheet): TO-220F ( SOT186A ). Type of transistor: NPN. Operating temperature: -...+150°C. Vcbo: 1000V. Saturation voltage VCE(sat): 0.25V. Collector/emitter voltage Vceo: 450V. Number of terminals: 3. Quantity per case: 1. BE diode: no. CE diode: no
Set of 1
2.24$ VAT incl.
(2.24$ excl. VAT)
2.24$

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TIP3055

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Collector current: 15A. Housing: TO-247. Conditioning: plastic tube. Semiconductor material: silicon...
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MJ15016-ONS

MJ15016-ONS

Quantity per case: 1. Semiconductor material: silicon. FT: 0.8 MHz. Max hFE gain: 70. Minimum hFE ga...
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IRFZ44N

IRFZ44N

C(in): 1470pF. Cost): 360pF. Channel type: N. Drain-source protection : Zener diode. Quantity per ca...
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Quantity in stock : 1
KUY12

KUY12

Cost): 0.6pF. Quantity per case: 1. Semiconductor material: silicon. FT: 11 MHz. Function: S-L. Coll...
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Quantity in stock : 152
STP55NF06

STP55NF06

C(in): 1300pF. Cost): 300pF. Channel type: N. Trr Diode (Min.): 75 ns. Type of transistor: MOSFET. F...
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TT2140

TT2140

Cost): 110pF. Semiconductor material: silicon. Function: Vbe(sat)1.5V. Max hFE gain: 10. Minimum hFE...
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Quantity in stock : 19
MJ11032

MJ11032

Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. Function: hFE 10...
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Quantity in stock : 30
2N3055

2N3055

Type of transistor: NPN power transistor. Polarity: NPN. Collector-Emitter Voltage VCEO: 60V. Collec...
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MJ15022-ONS

MJ15022-ONS

Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: High Power Audio. Max hF...
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ESM336M400S1A5L360

ESM336M400S1A5L360

DC voltage: 400V. Capacitance: 33uF. Diameter: 13mm. Lenght: 36mm. Capacitor type: electrolyte. RoHS...
ESM336M400S1A5L360
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