Transistors

Semiconductor material: silicon. Function: Designed for high-speed applications. Collector current: 20A. Ic(pulse): 30A. Pd (Power Dissipation, Max): 85W. RoHS: yes. Tf(max): 150 ns. Housing: TO-220. Housing (according to data sheet): TO-220 CASE 221A. Type of transistor: NPN. Operating temperature: -65...+175°C. Vcbo: 180V. Saturation voltage VCE(sat): 0.6V. Maximum saturation voltage VCE(sat): 1.5V. Collector/emitter voltage Vceo: 190V. Vebo: 7V. Quantity per case: 1. BE diode: no. CE diode: no

Semiconductor material: silicon. Function: Fast Switching Speed. Collector current: 12A. Ic(pulse): 20A. Pd (Power Dissipation, Max): 70W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 250 ns. Tf(min): 120ns. Housing: TO-220. Housing (according to data sheet): TO-220AB. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 240V. Saturation voltage VCE(sat): 0.7V. Collector/emitter voltage Vceo: 120V. Vebo: 7V. Number of terminals: 3. Quantity per case: 1. Spec info: VCE(sat) 0.7V...1.5V. BE diode: no. CE diode: no

Semiconductor material: silicon. Function: S-L. Collector current: 15A. Pd (Power Dissipation, Max): 85W. Type of transistor: NPN. Vcbo: 300V. Collector/emitter voltage Vceo: 150V. Quantity per case: 1

RoHS: yes. Housing: TO-247. Number of terminals: 3. Manufacturer's marking: BUV48A. Collector-emitter voltage Uceo [V]: 450V. Collector current Ic [A], max.: 15A. Cutoff frequency ft [MHz]: 8. Maximum dissipation Ptot [W]: 125W. Temperature: +150°C. Pd (Power Dissipation, Max): 125W. Assembly/installation: PCB through-hole mounting. Tf(max): 0.8us. Tf(min): 0.4us. Housing (according to data sheet): TO-247. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 1000V. Saturation voltage VCE(sat): 1.5V. Collector/emitter voltage Vceo: 450V. Vebo: 7V. Type of transistor: Power Transistor. Polarity: NPN. Applications: switching. Collector-Emitter Voltage VCEO: 1000V. Collector current: 15A. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Spec info: ICP--55Ap (tp< 20us)

Semiconductor material: silicon. Function: S-L. Collector current: 5A. Pd (Power Dissipation, Max): 100W. Type of transistor: NPN. Vcbo: 850V. Collector/emitter voltage Vceo: 400V. Quantity per case: 1. CE diode: yes

Semiconductor material: silicon. Max hFE gain: 35. Minimum hFE gain: 10. Collector current: 5A. Pd (Power Dissipation, Max): 100W. Assembly/installation: PCB through-hole mounting. Tf(max): 0.8us. Housing: TO-3PN. Type of transistor: NPN. Vcbo: 1000V. Maximum saturation voltage VCE(sat): 1.5V. Collector/emitter voltage Vceo: 450V. Vebo: 9V. Quantity per case: 1. Function: high voltage, fast-switching. BE diode: no. CE diode: no

Semiconductor material: silicon. Collector current: 5A. Pd (Power Dissipation, Max): 32W. Type of transistor: NPN. Vcbo: 850V. Collector/emitter voltage Vceo: 400V. Quantity per case: 1

Semiconductor material: silicon. Max hFE gain: 50. Minimum hFE gain: 15. Collector current: 10A. Ic(pulse): 20A. Pd (Power Dissipation, Max): 125W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.8us. Housing: TO-247. Housing (according to data sheet): TO-247. Type of transistor: NPN. Vcbo: 1000V. Saturation voltage VCE(sat): 1.5V. Collector/emitter voltage Vceo: 450V. Vebo: 9V. Number of terminals: 3. Quantity per case: 1

Semiconductor material: silicon. Collector current: 10A. Pd (Power Dissipation, Max): 32W. Type of transistor: NPN. Vcbo: 850V. Collector/emitter voltage Vceo: 400V. Quantity per case: 1

Semiconductor material: silicon. Function: S-L. Collector current: 15A. Pd (Power Dissipation, Max): 175W. Assembly/installation: PCB through-hole mounting. Housing: TO-3PN. Type of transistor: NPN. Vcbo: 1000V. Collector/emitter voltage Vceo: 400V. Quantity per case: 1. BE diode: no. CE diode: no

RoHS: yes. Housing: PCB soldering. Housing: TO-3. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BUX48A. Collector-emitter voltage Uceo [V]: 450V. Collector current Ic [A], max.: 15A. Maximum dissipation Ptot [W]: 175W. Component family: high voltage NPN transistor. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +200°C

Semiconductor material: silicon. FT: 8 MHz. Function: S. Collector current: 2A. Pd (Power Dissipation, Max): 10W. Type of transistor: NPN. Vcbo: 450V. Collector/emitter voltage Vceo: 400V. Quantity per case: 1

RoHS: yes. Housing: PCB soldering. Housing: TO-220. Housing (JEDEC standard): TO-220. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BUX85G. Collector-emitter voltage Uceo [V]: 450V. Collector current Ic [A], max.: 2A. Cutoff frequency ft [MHz]: 4 MHz. Maximum dissipation Ptot [W]: 50W. Pd (Power Dissipation, Max): 50W. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-220. Type of transistor: NPN. Vcbo: 1000V. Saturation voltage VCE(sat): 0.8V. Maximum saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 450V. Component family: high voltage NPN transistor. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

Semiconductor material: silicon. FT: 20 MHz. Function: S-L. Collector current: 0.5A. Pd (Power Dissipation, Max): 20W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-126. Type of transistor: NPN. Vcbo: 1000V. Collector/emitter voltage Vceo: 450V. Resistor B: Power Transistor. BE diode: NPN. BE resistor: switching. C(in): 1000V. Cost): 0.5A. CE diode: 40W. Number of terminals: 3. Quantity per case: 1. Housing: TO-126 (TO-225, SOT-32)

RoHS: yes. Housing: PCB soldering. Housing: TO-126. Housing (JEDEC standard): SOT-82. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BUX87P. Collector-emitter voltage Uceo [V]: 450V. Collector current Ic [A], max.: 500mA. Maximum dissipation Ptot [W]: 42W. Component family: high voltage NPN transistor. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

Semiconductor material: silicon. FT: 25 MHz. Function: S-L. Minimum hFE gain: 20. Collector current: 10A. Ic(pulse): 15A. Temperature: +200°C. Pd (Power Dissipation, Max): 50W. Assembly/installation: PCB through-hole mounting. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Type of transistor: NPN. Vcbo: 300V. Collector/emitter voltage Vceo: 200V. Number of terminals: 2. Quantity per case: 1

Semiconductor material: silicon. Function: TV-HA. Collector current: 2A. Pd (Power Dissipation, Max): 10W. Type of transistor: NPN. Vcbo: 2200V. Collector/emitter voltage Vceo: 800V. Quantity per case: 1

Semiconductor material: silicon. Function: S-L. Collector current: 10A. Pd (Power Dissipation, Max): 60W. Type of transistor: NPN. Vcbo: 280V. Collector/emitter voltage Vceo: 200V. Quantity per case: 1

C(in): 1220pF. Cost): 410pF. Channel type: N. Type of transistor: MOSFET. ID (T=100°C): 37A. ID (T=25°C): 52A. Idss (max): 52A. Pd (Power Dissipation, Max): 120W. On-resistance Rds On: 0.018 Ohms. Assembly/installation: surface-mounted component (SMD). Td(off): 30 ns. Td(on): 12 ns. Technology: SIPMOS, PowerMosfet. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): P-TO263-3-2. Operating temperature: -55...+175°C. Voltage Vds(max): 55V. Quantity per case: 1

C(in): 1500pF. Cost): 750pF. Channel type: N. Trr Diode (Min.): 200 ns. Type of transistor: MOSFET. Id(imp): 60.4k Ohms. ID (T=100°C): 19A. ID (T=25°C): 30A. Idss (max): 100uA. IDss (min): 20uA. Pd (Power Dissipation, Max): 75W. On-resistance Rds On: 0.03 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 180 ns. Td(on): 30 ns. Technology: Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AC. Operating temperature: -55...+150°C. Voltage Vds(max): 50V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2.1V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no

Channel type: N. Type of transistor: MOSFET. Function: N MOSFET transistor. ID (T=100°C): 32A. ID (T=25°C): 42A. Idss (max): 42A. Pd (Power Dissipation, Max): 125W. On-resistance Rds On: 0.028 Ohms. Technology: V-MOS. Voltage Vds(max): 50V. Quantity per case: 1

Channel type: N. Type of transistor: MOSFET. Function: N MOSFET transistor. ID (T=100°C): 22A. ID (T=25°C): 39A. Idss (max): 39A. Pd (Power Dissipation, Max): 125W. On-resistance Rds On: 40m Ohms. Technology: V-MOS S/L. Voltage Vds(max): 50V. Note: 250/500ns. Quantity per case: 1

RoHS: no. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BUZ22. Drain-source voltage Uds [V]: 100V. Drain Current Id [A] @ 25°C: 34A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.055 Ohms @ 34A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 30 ns. Switch-off delay tf[nsec.]: 300 ns. Ciss Gate Capacitance [pF]: 1850pF. Maximum dissipation Ptot [W]: 125W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

Channel type: N. Type of transistor: MOSFET. Function: N MOSFET transistor. ID (T=25°C): 2.6A. Idss (max): 2.6A. Pd (Power Dissipation, Max): 78W. Technology: V-MOS L. Voltage Vds(max): 1000V. Quantity per case: 1

C(in): 330pF. Cost): 90pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 80 ns. Type of transistor: MOSFET. Id(imp): 44A. ID (T=100°C): 7A. ID (T=25°C): 11A. Idss (max): 250uA. Temperature: +175°C. Pd (Power Dissipation, Max): 70W. On-resistance Rds On: 0.23 Ohms. Assembly/installation: PCB through-hole mounting. Td(off): 25 ns. Td(on): 10 ns. Technology: Enhancement Mode Power MOSFET Transistor. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 100V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no