Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 4.07$ | 4.07$ |
5 - 9 | 3.87$ | 3.87$ |
10 - 18 | 3.67$ | 3.67$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 4.07$ | 4.07$ |
5 - 9 | 3.87$ | 3.87$ |
10 - 18 | 3.67$ | 3.67$ |
BUT12AF. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Collector current: 10A. Pd (Power Dissipation, Max): 23W. Assembly/installation: PCB through-hole mounting. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Type of transistor: NPN. Vcbo: 1000V. Collector/emitter voltage Vceo: 450V. BE diode: no. CE diode: no. Quantity in stock updated on 11/01/2025, 13:25.
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