Transistors

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: TO-264AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IXFK140N30P. Drain-source voltage Uds [V]: 300V. Drain Current Id [A] @ 25°C: 140A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.024 Ohms @ 70A. Gate breakdown voltage Ugs [V]: 5V. Switch-on time ton [nsec.]: 30 ns. Switch-off delay tf[nsec.]: 100 ns. Ciss Gate Capacitance [pF]: 14000pF. Maximum dissipation Ptot [W]: 1040W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

C(in): 7500pF. Cost): 920pF. Channel type: N. Conditioning: plastic tube. Drain-source protection : diode. Trr Diode (Min.): 250 ns. Type of transistor: MOSFET. Id(imp): 136A. ID (T=25°C): 34A. Idss (max): 2mA. IDss (min): 100uA. Pd (Power Dissipation, Max): 560W. On-resistance Rds On: 0.24 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 100 ns. Td(on): 45 ns. Technology: HiPerFet Power MOSFET. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264AA. Operating temperature: -55...+150°C. Voltage Vds(max): 800V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 25. Spec info: dv/dt 5V/ns. G-S Protection: no

C(in): 8400pF. Cost): 900pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 250 ns. Type of transistor: MOSFET. Function: F-Class--MHz Switching. Id(imp): 176A. ID (T=25°C): 44A. Idss (max): 2mA. IDss (min): 400uA. Number of terminals: 3. Pd (Power Dissipation, Max): 500W. On-resistance Rds On: 0.12 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 100 ns. Td(on): 30 ns. Technology: HiPerFet Power MOSFET. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264AA. Operating temperature: -55...+150°C. Voltage Vds(max): 500V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. Spec info: dv/dt 5V/ns. G-S Protection: no

RoHS: yes. C(in): 12pF. Cost): 910pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 250 ns. Type of transistor: MOSFET. Function: Enhancement Mode, Avalanche Rated. Id(imp): 100A. ID (T=25°C): 44A. Idss (max): 1.5mA. IDss (min): 50uA. Number of terminals: 3. Pd (Power Dissipation, Max): 1200W. On-resistance Rds On: 0.19 Ohms. Assembly/installation: PCB through-hole mounting. Td(off): 75 ns. Td(on): 28 ns. Technology: PolarHVTM HiPerFET Power MOSFET. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264AA. Operating temperature: -55...+150°C. Voltage Vds(max): 800V. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 3V. Spec info: dv/dt 10V/ns. G-S Protection: no

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: TO-264AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IXFK48N50. Drain-source voltage Uds [V]: 500V. Drain Current Id [A] @ 25°C: 44A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.12 Ohms @ 22A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 30 ns. Switch-off delay tf[nsec.]: 100 ns. Ciss Gate Capacitance [pF]: 8400pF. Maximum dissipation Ptot [W]: 500W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Housing (JEDEC standard): 25. Assembly/installation: PCB through-hole mounting. Td(off): 100 ns. Td(on): 30 ns. Technology: HiPerFet Power MOSFET. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264AA. Operating temperature: -55...+150°C. Voltage Vds(max): 500V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Spec info: dv/dt 5V/ns

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: TO-264AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IXFK48N60P. Drain-source voltage Uds [V]: 600V. Drain Current Id [A] @ 25°C: 48A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.135 Ohms @ 24A. Gate breakdown voltage Ugs [V]: 5V. Switch-on time ton [nsec.]: 30 ns. Switch-off delay tf[nsec.]: 85 ns. Ciss Gate Capacitance [pF]: 8860pF. Maximum dissipation Ptot [W]: 830W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

RoHS: yes. C(in): 7900pF. Cost): 790pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 200 ns. Type of transistor: MOSFET. Id(imp): 150A. ID (T=100°C): 5.5V. ID (T=25°C): 64A. Idss (max): 1mA. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 830W. On-resistance Rds On: 85m Ohms. Assembly/installation: PCB through-hole mounting. Td(off): 85 ns. Td(on): 30 ns. Technology: HiPerFet Power MOSFET. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264AA. Operating temperature: -55...+150°C. Voltage Vds(max): 500V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5.5V. Vgs(th) min.: 3V. Spec info: dv/dt 20V/ns. G-S Protection: no

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: TO-264AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IXFK64N60P. Drain-source voltage Uds [V]: 600V. Drain Current Id [A] @ 25°C: 64A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.096 Ohms @ 32A. Gate breakdown voltage Ugs [V]: 5V. Switch-on time ton [nsec.]: 28 ns. Switch-off delay tf[nsec.]: 79 ns. Ciss Gate Capacitance [pF]: 12000pF. Maximum dissipation Ptot [W]: 1040W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

C(in): 10000pF. Cost): 1800pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 250 ns. Type of transistor: MOSFET. Id(imp): 360A. ID (T=100°C): 75A. ID (T=25°C): 90A. Idss (max): 2mA. IDss (min): 100uA. Number of terminals: 3. Pd (Power Dissipation, Max): 500W. On-resistance Rds On: 0.033 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 100 ns. Td(on): 42 ns. Technology: HiPerFet Power MOSFET. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264AA. Operating temperature: -55...+150°C. Voltage Vds(max): 300V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Spec info: dv/dt 5V/ns. G-S Protection: no

RoHS: yes. Component family: MOSFET, N-MOS. Housing: SOT-227B (ISOTOP). Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: GigaMOS. Drain-source voltage Uds [V]: 75V. Drain Current Id [A] @ 25°C: 480A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.0019 Ohms @ 480A. Gate breakdown voltage Ugs [V]: 5V. Switch-on time ton [nsec.]: 48 ns. Switch-off delay tf[nsec.]: 80 ns. Ciss Gate Capacitance [pF]: 41000pF. Maximum dissipation Ptot [W]: 940W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C

C(in): 9100pF. Cost): 2200pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 250 ns. Type of transistor: MOSFET. Function: Electrically Isolated Back Surface. Id(imp): 480A. ID (T=25°C): 105A. Idss (max): 2uA. IDss (min): 100uA. Number of terminals: 3. Pd (Power Dissipation, Max): 400W. On-resistance Rds On: 17m Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 110 ns. Td(on): 40 ns. Technology: Polar HiPerFet Power MOSFET. Housing: ISOPLUS247 ( TO-247 ). Housing (according to data sheet): ISOPLUS247 ( TO-247 ). Operating temperature: -55...+150°C. Voltage Vds(max): 200V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Spec info: dv/dt 5V/ns. Note: insulation voltage 2500V 50/60Hz, RMS, 1 minute. G-S Protection: no

C(in): 7000pF. Cost): 2250pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 200 ns. Type of transistor: MOSFET. Function: Electrically Isolated Back Surface. Id(imp): 380A. ID (T=100°C): 75A. ID (T=25°C): 100A. Idss (max): 1.5mA. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 300W. On-resistance Rds On: 13m Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 150 ns. Td(on): 30 ns. Technology: Polar HiPerFet Power MOSFET. Housing: ISOPLUS247 ( TO-247 ). Housing (according to data sheet): ISOPLUS247. Operating temperature: -55...+150°C. Voltage Vds(max): 150V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 5V. Vgs(th) min.: 2.5V. Spec info: dv/dt 10V/ns. Note: insulation voltage 2500V 50/60Hz, RMS, 1 minute. G-S Protection: no

C(in): 7600pF. Cost): 2900pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 150 ns. Type of transistor: MOSFET. Function: Electrically Isolated Back Surface. Id(imp): 400A. ID (T=100°C): 75A. ID (T=25°C): 133A. Idss (max): 1mA. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 300W. On-resistance Rds On: 0.009 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 150 ns. Td(on): 30 ns. Technology: Polar HiPerFet Power MOSFET. Housing: ISOPLUS247 ( TO-247 ). Housing (according to data sheet): ISOPLUS247 ( TO-247 ). Operating temperature: -55...+175°C. Voltage Vds(max): 100V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Spec info: dv/dt 10V/ns. Note: insulation voltage 2500V 50/60Hz, RMS, 1 minute. G-S Protection: no

C(in): 7500pF. Cost): 920pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 250 ns. Type of transistor: MOSFET. Id(imp): 136A. ID (T=25°C): 34A. Idss (max): 2mA. IDss (min): 100uA. Number of terminals: 3. Pd (Power Dissipation, Max): 560W. On-resistance Rds On: 0.24 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 100 ns. Td(on): 45 ns. Technology: HiPerFet Power MOSFET. Housing: PLUS247. Housing (according to data sheet): PLUS-247 (TO247 without fixing hole). Operating temperature: -55...+150°C. Voltage Vds(max): 800V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 3V. Spec info: dv/dt 5V/ns. G-S Protection: no

C(in): 1500pF. Cost): 170pF. Channel type: N. Trr Diode (Min.): 130 ns. Function: HiPerFAST IGBT with Diode. Collector current: 48A. Ic(pulse): 80A. Ic(T=100°C): 24A. Number of terminals: 3. Pd (Power Dissipation, Max): 150W. Assembly/installation: PCB through-hole mounting. Td(off): 75 ns. Td(on): 15 ns. Housing: TO-247. Housing (according to data sheet): TO-247 ( AD ). Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.1V. Maximum saturation voltage VCE(sat): 2.5V. Collector/emitter voltage Vceo: 600V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 2.5V. Gate/emitter voltage VGE(th)max.: 5.5V. Note: HiPerFAST IGBT transistor. CE diode: yes. Germanium diode: no

C(in): 2700pF. Cost): 270pF. Channel type: N. Trr Diode (Min.): 120ns. Function: Ic 60A @ 25°C, 32A @ 90°C, Icm 120A (pulsed). Collector current: 60A. Ic(pulse): 60.4k Ohms. Ic(T=100°C): 32A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 100 ns. Td(on): 25 ns. Housing: TO-247. Housing (according to data sheet): TO-247 ( AD ) HiPerFAST IGBT. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.3V. Collector/emitter voltage Vceo: 600V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 2.5V. Gate/emitter voltage VGE(th)max.: 5V. CE diode: yes

RoHS: yes. Component family: IGBT transistor with built-in high-speed free-wheeling diode. Housing: PCB soldering. Housing: TO-247AD. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: 39N60BD1. Collector-emitter voltage Uce [V]: 600V. Collector current Ic [A]: 76A. Switch-on time ton [nsec.]: 25 ns. Switch-off delay tf[nsec.]: 500 ns. Gate breakdown voltage Ugs [V]: 5V. Maximum dissipation Ptot [W]: 200W. Maximum collector current (A): 152A. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

C(in): 2560pF. Cost): 210pF. Channel type: P. Trr Diode (Min.): 25 ns. Function: C2-Class High Speed IGBT. Collector current: 60A. Ic(pulse): 33A. Ic(T=100°C): 200A. Note: insulated-case. Number of terminals: 3. Pd (Power Dissipation, Max): 167W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 130 ns. Td(on): 18 ns. Housing: ISOPLUS247 ( TO-247 ). Housing (according to data sheet): ISOPLUS247. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.9V. Collector/emitter voltage Vceo: 600V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 5V. CE diode: yes. Germanium diode: no

C(in): 1960pF. Cost): 220pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Trr Diode (Min.): 25 ns. Function: High Speed ​​PT IGBTs for 40-100kHz Switching. Collector current: 56A. Ic(pulse): 230A. Ic(T=100°C): 27A. Number of terminals: 3. Pd (Power Dissipation, Max): 125W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 92 ns. Td(on): 19 ns. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.3V. Collector/emitter voltage Vceo: 600V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Spec info: Electrically Isolated Back Surface. CE diode: yes. Germanium diode: no

C(in): 3900pF. Cost): 280pF. Channel type: N. Trr Diode (Min.): 35ns. Function: C2-Class High Speed IGBT. Collector current: 75A. Ic(pulse): 300A. Ic(T=100°C): 48A. Number of terminals: 3. Pd (Power Dissipation, Max): 250W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 95 ns. Td(on): 18 ns. Housing: ISOPLUS247 ( TO-247 ). Housing (according to data sheet): ISOPLUS247. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.3V. Maximum saturation voltage VCE(sat): 2.7V. Collector/emitter voltage Vceo: 600V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 5V. Note: HiPerFAST IGBT transistor. Spec info: ICM TC=25°C, 1ms 300A. CE diode: no. Germanium diode: no

C(in): 2113pF. Cost): 197pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Function: IGBT With Ultrafast Soft Recovery Diode. Collector current: 75A. Ic(pulse): 260A. Ic(T=100°C): 30A. Pd (Power Dissipation, Max): 268W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 127 ns. Td(on): 43 ns. Housing: TO-247. Housing (according to data sheet): TO-247AC. Operating temperature: -55...+175°C. Saturation voltage VCE(sat): 1.6V. Maximum saturation voltage VCE(sat): 1.9V. Collector/emitter voltage Vceo: 600V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 4 v. Gate/emitter voltage VGE(th)max.: 6.5V. Number of terminals: 3. Note: insulation 2500V (50/60Hz RMS, t=1minute). CE diode: yes. Germanium diode: no

C(in): 2250pF. Cost): 370pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 250 ns. Type of transistor: MOSFET. Function: N-Channel Enhancement Mode. Id(imp): 90A. ID (T=25°C): 36A. Idss (max): 200uA. IDss (min): 1uA. Number of terminals: 2. Pd (Power Dissipation, Max): 300W. On-resistance Rds On: 0.092 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 97 ns. Td(on): 24 ns. Technology: PolarHTTM Power MOSFET. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263AB ). Operating temperature: -55...+150°C. Voltage Vds(max): 300V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5.5V. Vgs(th) min.: 3V. G-S Protection: no

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: TO-247AD. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IXTH24N50. Drain-source voltage Uds [V]: 500V. Drain Current Id [A] @ 25°C: 24A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.23 Ohms @ 12A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 30 ns. Switch-off delay tf[nsec.]: 80 ns. Ciss Gate Capacitance [pF]: 4200pF. Maximum dissipation Ptot [W]: 300W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

RoHS: no. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: TO-247AD. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IXTH5N100A. Drain-source voltage Uds [V]: 1 kV. Drain Current Id [A] @ 25°C: 5A. Drain current through resistor Rds [Ohm] @ Ids [A]: 2 Ohms @ 2.5A. Gate breakdown voltage Ugs [V]: 4.5V. Switch-on time ton [nsec.]: 100 ns. Switch-off delay tf[nsec.]: 200 ns. Ciss Gate Capacitance [pF]: 2600pF. Maximum dissipation Ptot [W]: 180W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

C(in): 4800pF. Cost): 1020pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 160 ns. Type of transistor: MOSFET. Function: N-Channel Enhancement Mode. Id(imp): 225A. ID (T=100°C): 75A. ID (T=25°C): 96A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 600W. On-resistance Rds On: 24m Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 75 ns. Td(on): 28 ns. Technology: PolarHT Power MOSFET. Housing: TO-247. Housing (according to data sheet): TO-247. Operating temperature: -55...+150°C. Voltage Vds(max): 200V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2.5V. G-S Protection: no