Transistors

C(in): 12pF. Cost): 2210pF. Channel type: P. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 315 ns. Type of transistor: MOSFET. Function: P-Channel Enhancement Mode. Id(imp): 270A. ID (T=25°C): 90A. Idss (max): 250uA. IDss (min): 50uA. Number of terminals: 3. Pd (Power Dissipation, Max): 890W. On-resistance Rds On: 0.044 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 89 ns. Td(on): 32 ns. Technology: PolarPTM Power MOSFET. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264. Operating temperature: -55...+150°C. Voltage Vds(max): 200V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. G-S Protection: no

C(in): 2250pF. Cost): 370pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 250 ns. Type of transistor: MOSFET. Function: N-Channel Enhancement Mode. Id(imp): 90A. ID (T=100°C): 36A. ID (T=25°C): 36A. Idss (max): 200uA. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 300W. On-resistance Rds On: 92m Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 97 ns. Td(on): 24 ns. Technology: PolarHT Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220. Operating temperature: -55...+150°C. Voltage Vds(max): 300V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5.5V. Vgs(th) min.: 3V. G-S Protection: no

C(in): 4000pF. Cost): 420pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 250 ns. Type of transistor: MOSFET. Function: N-Channel Enhancement Mode. Id(imp): 130A. ID (T=25°C): 50A. Idss (max): 150uA. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 300W. On-resistance Rds On: 92 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 97 ns. Td(on): 24 ns. Technology: PolarHT Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220. Operating temperature: -55...+150°C. Voltage Vds(max): 300V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Drain-source protection : yes. G-S Protection: no

C(in): 2500pF. Cost): 440pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 70 ns. Type of transistor: MOSFET. Function: N-Channel Enhancement Mode. Ic(T=100°C): 75A. Id(imp): 240A. ID (T=25°C): 90A. Idss (max): 250uA. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 176W. On-resistance Rds On: 0.066 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 40 ns. Td(on): 19 ns. Technology: TrenchMVTM Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220. Operating temperature: -55...+175°C. Voltage Vds(max): 55V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no

C(in): 2770pF. Cost): 420pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 37 ns. Type of transistor: MOSFET. Function: N-Channel Enhancement Mode. Ic(T=100°C): 75A. Id(imp): 240A. ID (T=25°C): 90A. Idss (max): 200uA. IDss (min): 2uA. Number of terminals: 3. Pd (Power Dissipation, Max): 150W. On-resistance Rds On: 0.07 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 39 ns. Td(on): 19 ns. Technology: TrenchT2TM Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220. Operating temperature: -55...+175°C. Voltage Vds(max): 55V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no

C(in): 2250pF. Cost): 370pF. Channel type: N. Trr Diode (Min.): 250 ns. Type of transistor: MOSFET. Function: N-Channel Enhancement Mode. Id(imp): 90A. ID (T=100°C): 36A. ID (T=25°C): 36A. Idss (max): 200uA. IDss (min): 1uA. Pd (Power Dissipation, Max): 300W. On-resistance Rds On: 92m Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 97 ns. Td(on): 24 ns. Technology: PolarHT Power MOSFET. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Operating temperature: -55...+150°C. Voltage Vds(max): 300V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5.5V. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no

C(in): 2890pF. Cost): 280pF. Channel type: N. Trr Diode (Min.): 400 ns. Type of transistor: MOSFET. Function: N-Channel Enhancement Mode. Id(imp): 50A. ID (T=100°C): 12A. ID (T=25°C): 24A. Idss (max): 200uA. IDss (min): 25uA. Pd (Power Dissipation, Max): 480W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 30 ns. Td(on): 15 ns. Technology: PolarP2TM Power MOSFET. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Operating temperature: -55...+150°C. Voltage Vds(max): 500V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 2.5V. Number of terminals: 3. Quantity per case: 1. On-resistance Rds On: 270 milliOhms. Drain-source protection : yes. G-S Protection: no

C(in): 6300pF. Cost): 950pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 250 ns. Type of transistor: MOSFET. Function: N-Channel Enhancement Mode. Id(imp): 220A. ID (T=100°C): 75A. ID (T=25°C): 88A. Idss (max): 1mA. IDss (min): 100uA. Pd (Power Dissipation, Max): 600W. On-resistance Rds On: 40m Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 96 ns. Td(on): 25 ns. Technology: PolarHT Power MOSFET. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Operating temperature: -55...+150°C. Voltage Vds(max): 300V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 5V. Vgs(th) min.: 2.5V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no

C(in): 160pF. Cost): 35pF. Channel type: N. Type of transistor: JFET. IDss (min): 100mA. IGF: 50mA. Pd (Power Dissipation, Max): 350mW. On-resistance Rds On: 8 Ohms. Assembly/installation: PCB through-hole mounting. Td(off): 5 ns. Td(on): 6 ns. Housing: TO-92. Housing (according to data sheet): TO-92. Operating temperature: -55...+150°C. Voltage Vds(max): 25V. Gate/source voltage Vgs: 0.7V. Gate/source voltage (off) max.: 4.5V. Gate/source voltage (off) min.: 0.5V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : no. G-S Protection: no

Channel type: N. Type of transistor: FET. Function: Up 10V. IDss (min): 20mA. IGF: 50mA. Pd (Power Dissipation, Max): 0.35W. On-resistance Rds On: 30 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Voltage Vds(max): 35V. Gate/source voltage (off) max.: 10V. Gate/source voltage (off) min.: 3V. Quantity per case: 1

C(in): 28pF. Cost): 5pF. Channel type: N. Type of transistor: FET. Function: Up 4.5V. Idss (max): 5mA. IGF: 50mA. Pd (Power Dissipation, Max): 0.625W. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92 Ammo-Pak. Operating temperature: -55...+150°C. Voltage Vds(max): 35V. Gate/source voltage (off) max.: 5V. Gate/source voltage (off) min.: 1V. Quantity per case: 1

C(in): 28pF. Cost): 5pF. Channel type: N. Type of transistor: FET. IDss (min): 0.2mA. IGF: 50mA. Pd (Power Dissipation, Max): 350mW. On-resistance Rds On: 100 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92. Operating temperature: -55...+150°C. Voltage Vds(max): 35V. Gate/source voltage Vgs: 35V. Gate/source voltage (off) max.: 3V. Gate/source voltage (off) min.: 0.5V. Number of terminals: 3. Quantity per case: 1. Spec info: VGS(off) min 0.5V, max 3V. Drain-source protection : no. G-S Protection: no

Channel type: P. Type of transistor: FET. Function: P-Channel Switch. Idss (max): 100mA. IDss (min): 20mA. IGF: 50mA. Pd (Power Dissipation, Max): 350mW. On-resistance Rds On: 85 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: P-Channel Switch. Housing: TO-92. Housing (according to data sheet): TO-92. Operating temperature: -55...+150°C. Voltage Vds(max): 30 v. Gate/source voltage (off) max.: 10V. Gate/source voltage (off) min.: 5V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : no. G-S Protection: no

RoHS: yes. Housing: PCB soldering. Housing: TO-92. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: J175. Drain-source voltage Uds [V]: -30V. Drain current Idss [A] @ Ug=0V: -50mA. Gate-source breakpoint voltage Ugss [V] @ Uds=0V: +6V @ -15V. Maximum dissipation Ptot [W]: 0.35W. Component family: P-Channel JFET Transistor. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

Channel type: P. Type of transistor: JFET. Idss (max): 25mA. IDss (min): 2mA. IGF: 50mA. Pd (Power Dissipation, Max): 350mW. On-resistance Rds On: 250 Ohms. Assembly/installation: PCB through-hole mounting. Technology: P-Channel Switch. Housing: TO-92. Housing (according to data sheet): TO-92. Operating temperature: -55...+150°C. Voltage Vds(max): 30 v. Gate/source voltage (off) max.: 4 v. Gate/source voltage (off) min.: 1V. Quantity per case: 1. Function: VGS(off) 1V...4V

Quantity per case: 1. Semiconductor material: silicon. Function: hFE 35...125. Collector current: 500mA. Pd (Power Dissipation, Max): 0.8W. Assembly/installation: PCB through-hole mounting. Housing: TO-5. Housing (according to data sheet): TO-5. Type of transistor: NPN. Collector/emitter voltage Vceo: 75V. Spec info: Lo-Pwr BJT

Quantity per case: 1. Semiconductor material: silicon. Collector current: 0.1A. Type of transistor: NPN. Collector/emitter voltage Vceo: 50V. Spec info: TO-92M

Quantity per case: 1. Semiconductor material: silicon. Collector current: 0.1A. Type of transistor: NPN. Collector/emitter voltage Vceo: 50V. Spec info: TO-92M

Quantity per case: 1. Semiconductor material: silicon. Collector current: 0.1A. Type of transistor: NPN. Collector/emitter voltage Vceo: 50V. Spec info: TO-92M

Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Function: general purpose. Collector current: 0.2A. Pd (Power Dissipation, Max): 0.25W. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: PNP. Collector/emitter voltage Vceo: 30 v. Spec info: KSA642-O

Quantity per case: 1. Semiconductor material: silicon. FT: 180 MHz. Collector current: 0.15A. Pd (Power Dissipation, Max): 0.25W. Type of transistor: PNP. Collector/emitter voltage Vceo: 60V

Quantity per case: 1. Semiconductor material: silicon. FT: 120 MHz. Function: 9mm. Collector current: 2A. Number of terminals: 3. Pd (Power Dissipation, Max): 1W. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92M ( 9mm ). Type of transistor: PNP. Vcbo: 30 v. Collector/emitter voltage Vceo: 30 v. Vebo: 5V. Spec info: Samsung>> STB1277

Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: NF/S. Collector current: 0.7A. Pd (Power Dissipation, Max): 1W. Type of transistor: PNP. Collector/emitter voltage Vceo: 80V. Spec info: 9mm height. CE diode: yes

Cost): 55pF. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: TV-HA. Collector current: 1.5A. Pd (Power Dissipation, Max): 25W. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: PNP. Vcbo: 150V. Maximum saturation voltage VCE(sat): 1.5V. Collector/emitter voltage Vceo: 150V. Vebo: 5V. Spec info: complementary transistor (pair) KSC2073. BE diode: no. CE diode: no

Cost): 2pF. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 600. Minimum hFE gain: 300. Collector current: 50mA. Marking on the case: A992. Equivalents: 2SC992. Number of terminals: 3. Pd (Power Dissipation, Max): 0.5W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92 3L (AMMO). Type of transistor: PNP. Operating temperature: -...+150°C. Vcbo: 120V. Saturation voltage VCE(sat): 0.9V. Collector/emitter voltage Vceo: 120V. Vebo: 5V. Spec info: complementary transistor (pair) KSC1845. BE diode: no. CE diode: no