Transistors

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: SOT-223. Configuration: surface-mounted component (SMD). Number of terminals: 3. Drain-source voltage Uds [V]: 100V. Drain Current Id [A] @ 25°C: 1.5A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.54 Ohms @ 0.9A. Gate breakdown voltage Ugs [V]: 2V. Switch-on time ton [nsec.]: 9.3 ns. Switch-off delay tf[nsec.]: 16 ns. Ciss Gate Capacitance [pF]: 250pF. Maximum dissipation Ptot [W]: 3.1W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

C(in): 530pF. Cost): 230pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 42 ns. Type of transistor: MOSFET. Id(imp): 16A. ID (T=100°C): 3.1A. ID (T=25°C): 5.5A. Idss (max): 250uA. IDss (min): 25uA. Pd (Power Dissipation, Max): 2.1W. On-resistance Rds On: 0.45 Ohms. Assembly/installation: surface-mounted component (SMD). Td(off): 6.9ns. Td(on): 7.4 ns. Housing: SOT-223 ( TO-226 ). Housing (according to data sheet): SOT-223. Voltage Vds(max): 30 v. Gate/source voltage Vgs: 16V. Vgs(th) max.: 2.4V. Vgs(th) min.: 1V. Drain-source protection : yes. G-S Protection: no

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: SOT-223. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: LL2703. Drain-source voltage Uds [V]: 30 v. Drain Current Id [A] @ 25°C: 3.9A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.06 Ohms @ 3.1A. Gate breakdown voltage Ugs [V]: 2.4V. Switch-on time ton [nsec.]: 7.4 ns. Switch-off delay tf[nsec.]: 6.9ns. Ciss Gate Capacitance [pF]: 530pF. Maximum dissipation Ptot [W]: 2.1W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: SOT-223. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: LL2703. Drain-source voltage Uds [V]: 30 v. Drain Current Id [A] @ 25°C: 3.9A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.06 Ohms @ 3.1A. Gate breakdown voltage Ugs [V]: 2.4V. Switch-on time ton [nsec.]: 7.4 ns. Switch-off delay tf[nsec.]: 6.9ns. Ciss Gate Capacitance [pF]: 530pF. Maximum dissipation Ptot [W]: 2.1W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: SOT-223. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: LL2705. Drain-source voltage Uds [V]: 55V. Drain Current Id [A] @ 25°C: 3.8A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.04 Ohms @ 3.8A. Gate breakdown voltage Ugs [V]: 2V. Switch-on time ton [nsec.]: 6.2 ns. Switch-off delay tf[nsec.]: 35 ns. Ciss Gate Capacitance [pF]: 870pF. Maximum dissipation Ptot [W]: 2.1W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: SOT-23. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 1A. Drain-source voltage Uds [V]: 20V. Drain Current Id [A] @ 25°C: 1.2A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.35 Ohms @ 0.47A. Gate breakdown voltage Ugs [V]: 1.5V. Switch-on time ton [nsec.]: 2.5 ns. Switch-off delay tf[nsec.]: 9.7 ns. Ciss Gate Capacitance [pF]: 110pF. Maximum dissipation Ptot [W]: 0.54W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

C(in): 740pF. Cost): 90pF. Channel type: N. Conditioning: roll. Conditioning unit: 3000. Quantity per case: 1. Trr Diode (Min.): 16 ns. Type of transistor: MOSFET. Function: Ultra Low On-Resistance. Id(imp): 33A. ID (T=100°C): 3.4A. ID (T=25°C): 4.2A. Idss (max): 25uA. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 1uA. On-resistance Rds On: 0.035 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 54 ns. Td(on): 7.5 ns. Technology: HEXFET Power MOSFET. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO-236AB ) ( Micro3 ). Operating temperature: -55...+150°C. Voltage Vds(max): 20V. Gate/source voltage Vgs: 12V. Vgs(th) min.: 0.6V. Drain-source protection : yes. G-S Protection: no

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: SOT-23. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 1g. Drain-source voltage Uds [V]: 20V. Drain Current Id [A] @ 25°C: 3.4A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.045 Ohms @ 4.2A. Gate breakdown voltage Ugs [V]: 1.2V. Switch-on time ton [nsec.]: 7.5 ns. Switch-off delay tf[nsec.]: 54 ns. Ciss Gate Capacitance [pF]: 740pF. Maximum dissipation Ptot [W]: 0.8W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

C(in): 85pF. Cost): 34pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 26 ns. Type of transistor: MOSFET. Function: Ultra Low On-Resistance. Id(imp): 7.3A. ID (T=100°C): 0.93A. ID (T=25°C): 1.2A. Idss (max): 25uA. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 540mW. On-resistance Rds On: 0.025 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 9 ns. Td(on): 3.9 ns. Technology: HEXFET Power MOSFET. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO-236AB ) ( Micro3 ). Operating temperature: -55...+150°C. Voltage Vds(max): 30 v. Gate/source voltage Vgs: 20V. Vgs(th) min.: 1V. G-S Protection: no

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: SOT-23. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: B. Drain-source voltage Uds [V]: 30 v. Drain Current Id [A] @ 25°C: 1.2A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.25 Ohms @ 0.91A. Gate breakdown voltage Ugs [V]: 3V. Switch-on time ton [nsec.]: 3.9 ns. Switch-off delay tf[nsec.]: 9 ns. Ciss Gate Capacitance [pF]: 85pF. Maximum dissipation Ptot [W]: 0.54W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: SOT-23. Configuration: surface-mounted component (SMD). Number of terminals: 3. Drain-source voltage Uds [V]: 30 v. Drain Current Id [A] @ 25°C: 1.2A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.25 Ohms @ 0.91A. Gate breakdown voltage Ugs [V]: 3V. Switch-on time ton [nsec.]: 3.9 ns. Switch-off delay tf[nsec.]: 9 ns. Ciss Gate Capacitance [pF]: 85pF. Maximum dissipation Ptot [W]: 0.54W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

RoHS: yes. Component family: MOSFET, P-MOS. Housing: PCB soldering (SMD). Housing: SOT-23. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: D. Drain-source voltage Uds [V]: -30V. Drain Current Id [A] @ 25°C: -0.76A. Drain current through resistor Rds [Ohm] @ Ids [A]: 1 Ohms @ -0.3A. Gate breakdown voltage Ugs [V]: -3V. Switch-on time ton [nsec.]: 10 ns. Switch-off delay tf[nsec.]: 23 ns. Ciss Gate Capacitance [pF]: 75pF. Maximum dissipation Ptot [W]: 0.54W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

C(in): 510pF. Cost): 71pF. Channel type: P. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 17 ns. Type of transistor: MOSFET. Function: Ultra Low On-Resistance. Id(imp): 24A. ID (T=100°C): 2.4A. ID (T=25°C): 3A. Idss (max): 5uA. IDss (min): 1uA. Note: screen printing/SMD code H. Marking on the case: H. Number of terminals: 3. Pd (Power Dissipation, Max): 1.25W. On-resistance Rds On: 0.098 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 52 ns. Td(on): 18 ns. Technology: HEXFET Power MOSFET. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO-236AB ) ( Micro3 ). Operating temperature: -55...+150°C. Voltage Vds(max): 30 v. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2.5V. Vgs(th) min.: 1V. G-S Protection: no

RoHS: yes. Component family: MOSFET, P-MOS. Housing: PCB soldering (SMD). Housing: SOT-23. Configuration: surface-mounted component (SMD). Number of terminals: 3. Drain-source voltage Uds [V]: -30V. Drain Current Id [A] @ 25°C: -3A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.165 Ohms @ -2.6A. Gate breakdown voltage Ugs [V]: -2.5V. Switch-on time ton [nsec.]: 350 ns. Switch-off delay tf[nsec.]: 12 ns. Ciss Gate Capacitance [pF]: 88pF. Maximum dissipation Ptot [W]: 1.25W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

RoHS: yes. Component family: MOSFET, P-MOS. Housing: PCB soldering (SMD). Housing: SOT-23. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: C. Drain-source voltage Uds [V]: -20V. Drain Current Id [A] @ 25°C: -0.62A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.6 Ohms @ -0.61A. Gate breakdown voltage Ugs [V]: -1.5V. Switch-on time ton [nsec.]: 13 ns. Switch-off delay tf[nsec.]: 22 ns. Ciss Gate Capacitance [pF]: 97pF. Maximum dissipation Ptot [W]: 0.54W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: SOT-23. Configuration: surface-mounted component (SMD). Number of terminals: 3. Drain-source voltage Uds [V]: 30 v. Drain Current Id [A] @ 25°C: 5A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.028 Ohms @ 5A. Gate breakdown voltage Ugs [V]: 1.1V. Switch-on time ton [nsec.]: 4.2 ns. Switch-off delay tf[nsec.]: 22 ns. Ciss Gate Capacitance [pF]: 650pF. Maximum dissipation Ptot [W]: 1.3W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

C(in): 633pF. Cost): 145pF. Channel type: P. Quantity per case: 1. Type of transistor: MOSFET. Function: Ultra Low On-Resistance. Id(imp): 22A. ID (T=100°C): 2.2A. ID (T=25°C): 3.7A. Idss (max): 25uA. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 1.3W. On-resistance Rds On: 0.05 Ohms. Assembly/installation: surface-mounted component (SMD). Td(off): 588 ns. Td(on): 350 ns. Technology: HEXFET Power MOSFET. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO-236AB ) ( Micro3 ). Operating temperature: -55...+150°C. Voltage Vds(max): 20V. Vgs(th) max.: 1.2V. Vgs(th) min.: 0.4V. Drain-source protection : yes. G-S Protection: no

RoHS: yes. Component family: MOSFET, P-MOS. Housing: PCB soldering (SMD). Housing: SOT-23. Configuration: surface-mounted component (SMD). Number of terminals: 3. Drain-source voltage Uds [V]: -20V. Drain Current Id [A] @ 25°C: -3.7A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.135 Ohms @ -3.1A. Gate breakdown voltage Ugs [V]: -1.2V. Switch-on time ton [nsec.]: 350 ns. Switch-off delay tf[nsec.]: 588 ns. Ciss Gate Capacitance [pF]: 633pF. Maximum dissipation Ptot [W]: 1.3W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

RoHS: yes. Component family: MOSFET, P-MOS. Housing: PCB soldering (SMD). Housing: SOT-23/6. Configuration: surface-mounted component (SMD). Number of terminals: 6. Manufacturer's marking: 2E. Drain-source voltage Uds [V]: -20V. Drain Current Id [A] @ 25°C: -5.6A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.05 Ohms @ -5.1A. Gate breakdown voltage Ugs [V]: -1.2V. Switch-on time ton [nsec.]: 12 ns. Switch-off delay tf[nsec.]: 70 ns. Ciss Gate Capacitance [pF]: 1079pF. Maximum dissipation Ptot [W]: 1.3W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

C(in): 480pF. Cost): 130pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 60 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 72A. ID (T=100°C): 12A. ID (T=25°C): 17A. Idss (max): 250uA. IDss (min): 25uA. Equivalents: IRLR024NPBF. Number of terminals: 2. Pd (Power Dissipation, Max): 45W. On-resistance Rds On: 0.065 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 20 ns. Td(on): 7.1 ns. Technology: HEXFET Power MOSFET. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). Operating temperature: -55...+175°C. Voltage Vds(max): 5V. Gate/source voltage Vgs: 16V. Vgs(th) max.: 2V. Vgs(th) min.: 1V. Spec info: Gate control by logic level. Drain-source protection : yes. G-S Protection: no

Product series: HEXFET. Polarity: MOSFET N. Vdss (Drain to Source Voltage): 55V. Id @ Tc=25°C (Continuous Drain Current): 17A. Gate/source voltage Vgs: 110m Ohms / 9A / 4V. Gate/source voltage Vgs max: -16V. Max: 45W. Housing: DPAK. Mounting Type: SMD

ROHS: Yes. Housing: TO252AA, DPAK. Power: 38W. Assembly/installation: SMD. Type of transistor: N-MOSFET, HEXFET, logic level. Polarity: unipolar. Technology: HEXFET®. Properties of semiconductor: Logic Level. Drain-source voltage: 55V. Drain current: 17A. On-state resistance: 65m Ohms. Gate-source voltage: 16V, ±16V. Housing thermal resistance: 3.3K/W. Charge: 10nC

C(in): 440pF. Cost): 97pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 110 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 35A. ID (T=100°C): 7A. ID (T=25°C): 10A. Idss (max): 250uA. IDss (min): 25uA. Equivalents: IRLR120NTRPBF. Number of terminals: 2. Pd (Power Dissipation, Max): 48W. On-resistance Rds On: 0.185 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 23 ns. Td(on): 4 ns. Technology: HEXFET Power MOSFET. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). Operating temperature: -55...+175°C. Voltage Vds(max): 100V. Gate/source voltage Vgs: 16V. Vgs(th) max.: 2V. Vgs(th) min.: 1V. Spec info: Gate control by logic level. G-S Protection: no

C(in): 880pF. Cost): 220pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 75. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 76 ns. Type of transistor: MOSFET. Id(imp): 110A. ID (T=100°C): 20A. ID (T=25°C): 28A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 2. Pd (Power Dissipation, Max): 68W. On-resistance Rds On: 0.04 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 21 ns. Td(on): 8.9 ns. Technology: HEXFET Power MOSFET. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). Operating temperature: -55...+175°C. Voltage Vds(max): 55V. Gate/source voltage Vgs: 16V. Vgs(th) max.: 2V. Vgs(th) min.: 1V. Function: Logic-Level Gate Drive, Fast Switching. Spec info: low resistance R-on 0.040 Ohms. G-S Protection: no

C(in): 1700pF. Cost): 400pF. Channel type: N. Conditioning: roll. Conditioning unit: 2000. Quantity per case: 1. Trr Diode (Min.): 80 ns. Type of transistor: MOSFET. Id(imp): 160A. ID (T=100°C): 30A. ID (T=25°C): 42A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 2. Pd (Power Dissipation, Max): 110W. On-resistance Rds On: 0.027 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 26 ns. Td(on): 11 ns. Technology: HEXFET Power MOSFET. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). Operating temperature: -55...+175°C. Voltage Vds(max): 55V. Gate/source voltage Vgs: 16V. Vgs(th) max.: 2V. Vgs(th) min.: 1V. Spec info: Gate control by logic level. Function: Ultra Low On-Resistance, Fast Switching. Drain-source protection : yes. G-S Protection: no