IXFR120N20P

IXFR120N20P. C(in): 9100pF. Cost): 2200pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 250 ns. Type of transistor: MOSFET. Function: Electrically Isolated Back Surface. Id(imp): 480A. ID (T=25°C): 105A. Idss (max): 2uA. IDss (min): 100uA. Number of terminals: 3. Pd (Power Dissipation, Max): 400W. On-resistance Rds On: 17m Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 110 ns. Td(on): 40 ns. Technology: Polar HiPerFet Power MOSFET. Housing: ISOPLUS247 ( TO-247 ). Housing (according to data sheet): ISOPLUS247 ( TO-247 ). Operating temperature: -55...+150°C. Voltage Vds(max): 200V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Spec info: dv/dt 5V/ns. Note: insulation voltage 2500V 50/60Hz, RMS, 1 minute. G-S Protection: no. Quantity in stock updated on 25/12/2024, 04:25.