IXTA36N30P

Quantity	excl. VAT	VAT incl.
1 - 1	7.83$	7.83$
2 - 2	7.44$	7.44$
3 - 4	7.05$	7.05$
5 - 5	6.66$	6.66$

Quantity	U.P
1 - 1	7.83$	7.83$
2 - 2	7.44$	7.44$
3 - 4	7.05$	7.05$
5 - 5	6.66$	6.66$

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Quantity in stock : 5

Set of 1

IXTA36N30P. C(in): 2250pF. Cost): 370pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 250 ns. Type of transistor: MOSFET. Function: N-Channel Enhancement Mode. Id(imp): 90A. ID (T=25°C): 36A. Idss (max): 200uA. IDss (min): 1uA. Number of terminals: 2. Pd (Power Dissipation, Max): 300W. On-resistance Rds On: 0.092 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 97 ns. Td(on): 24 ns. Technology: PolarHTTM Power MOSFET. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263AB ). Operating temperature: -55...+150°C. Voltage Vds(max): 300V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5.5V. Vgs(th) min.: 3V. G-S Protection: no. Quantity in stock updated on 26/12/2024, 05:25.

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Delivery in 2-3 days, with postal tracking!