IXFR200N10P

Quantity	excl. VAT	VAT incl.
1 - 1	22.58$	22.58$
2 - 2	21.46$	21.46$
3 - 4	20.33$	20.33$
5 - 9	19.20$	19.20$
10 - 10	18.75$	18.75$

Quantity	U.P
1 - 1	22.58$	22.58$
2 - 2	21.46$	21.46$
3 - 4	20.33$	20.33$
5 - 9	19.20$	19.20$
10 - 10	18.75$	18.75$

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Quantity in stock : 10

Set of 1

IXFR200N10P. C(in): 7600pF. Cost): 2900pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 150 ns. Type of transistor: MOSFET. Function: Electrically Isolated Back Surface. Id(imp): 400A. ID (T=100°C): 75A. ID (T=25°C): 133A. Idss (max): 1mA. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 300W. On-resistance Rds On: 0.009 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 150 ns. Td(on): 30 ns. Technology: Polar HiPerFet Power MOSFET. Housing: ISOPLUS247 ( TO-247 ). Housing (according to data sheet): ISOPLUS247 ( TO-247 ). Operating temperature: -55...+175°C. Voltage Vds(max): 100V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Spec info: dv/dt 10V/ns. Note: insulation voltage 2500V 50/60Hz, RMS, 1 minute. G-S Protection: no. Quantity in stock updated on 15/01/2025, 06:25.

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Delivery in 2-3 days, with postal tracking!