IXGR60N60C2

Quantity	excl. VAT	VAT incl.
1 - 1	14.39$	14.39$
2 - 2	13.68$	13.68$
3 - 4	12.96$	12.96$
5 - 9	12.24$	12.24$
10 - 14	11.95$	11.95$
15 - 19	11.66$	11.66$
20 - 48	11.23$	11.23$

Quantity	U.P
1 - 1	14.39$	14.39$
2 - 2	13.68$	13.68$
3 - 4	12.96$	12.96$
5 - 9	12.24$	12.24$
10 - 14	11.95$	11.95$
15 - 19	11.66$	11.66$
20 - 48	11.23$	11.23$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 48

Set of 1

IXGR60N60C2. C(in): 3900pF. Cost): 280pF. Channel type: N. Trr Diode (Min.): 35ns. Function: C2-Class High Speed IGBT. Collector current: 75A. Ic(pulse): 300A. Ic(T=100°C): 48A. Number of terminals: 3. Pd (Power Dissipation, Max): 250W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 95 ns. Td(on): 18 ns. Housing: ISOPLUS247 ( TO-247 ). Housing (according to data sheet): ISOPLUS247. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.3V. Maximum saturation voltage VCE(sat): 2.7V. Collector/emitter voltage Vceo: 600V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 5V. Note: HiPerFAST IGBT transistor. Spec info: ICM TC=25°C, 1ms 300A. CE diode: no. Germanium diode: no. Quantity in stock updated on 15/01/2025, 06:25.

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Delivery in 2-3 days, with postal tracking!