Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 1 | 21.38$ | 21.38$ |
2 - 2 | 20.31$ | 20.31$ |
3 - 4 | 19.24$ | 19.24$ |
5 - 9 | 18.17$ | 18.17$ |
10 - 14 | 17.74$ | 17.74$ |
15 - 19 | 17.32$ | 17.32$ |
20 - 66 | 16.67$ | 16.67$ |
Quantity | U.P | |
---|---|---|
1 - 1 | 21.38$ | 21.38$ |
2 - 2 | 20.31$ | 20.31$ |
3 - 4 | 19.24$ | 19.24$ |
5 - 9 | 18.17$ | 18.17$ |
10 - 14 | 17.74$ | 17.74$ |
15 - 19 | 17.32$ | 17.32$ |
20 - 66 | 16.67$ | 16.67$ |
IXFK44N80P. RoHS: yes. C(in): 12pF. Cost): 910pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 250 ns. Type of transistor: MOSFET. Function: Enhancement Mode, Avalanche Rated. Id(imp): 100A. ID (T=25°C): 44A. Idss (max): 1.5mA. IDss (min): 50uA. Number of terminals: 3. Pd (Power Dissipation, Max): 1200W. On-resistance Rds On: 0.19 Ohms. Assembly/installation: PCB through-hole mounting. Td(off): 75 ns. Td(on): 28 ns. Technology: PolarHVTM HiPerFET Power MOSFET. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264AA. Operating temperature: -55...+150°C. Voltage Vds(max): 800V. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 3V. Spec info: dv/dt 10V/ns. G-S Protection: no. Quantity in stock updated on 15/01/2025, 06:25.
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