IXFK90N30

Quantity	excl. VAT	VAT incl.
1 - 1	16.15$	16.15$
2 - 2	15.35$	15.35$
3 - 4	14.54$	14.54$
5 - 9	13.73$	13.73$
10 - 14	13.41$	13.41$
15 - 19	13.08$	13.08$
20+	12.60$	12.60$

Quantity	U.P
1 - 1	16.15$	16.15$
2 - 2	15.35$	15.35$
3 - 4	14.54$	14.54$
5 - 9	13.73$	13.73$
10 - 14	13.41$	13.41$
15 - 19	13.08$	13.08$
20+	12.60$	12.60$

Delivery in 2-3 days, with postal tracking!

Out of stock

Set of 1

IXFK90N30. C(in): 10000pF. Cost): 1800pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 250 ns. Type of transistor: MOSFET. Id(imp): 360A. ID (T=100°C): 75A. ID (T=25°C): 90A. Idss (max): 2mA. IDss (min): 100uA. Number of terminals: 3. Pd (Power Dissipation, Max): 500W. On-resistance Rds On: 0.033 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 100 ns. Td(on): 42 ns. Technology: HiPerFet Power MOSFET. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264AA. Operating temperature: -55...+150°C. Voltage Vds(max): 300V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Spec info: dv/dt 5V/ns. G-S Protection: no. Quantity in stock updated on 25/12/2024, 18:25.

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Delivery in 2-3 days, with postal tracking!