IXGH32N60BU1

Quantity	excl. VAT	VAT incl.
1 - 1	19.33$	19.33$
2 - 2	18.36$	18.36$
3 - 4	17.40$	17.40$
5 - 9	16.43$	16.43$
10 - 14	16.04$	16.04$
15 - 19	15.66$	15.66$
20 - 23	15.08$	15.08$

Quantity	U.P
1 - 1	19.33$	19.33$
2 - 2	18.36$	18.36$
3 - 4	17.40$	17.40$
5 - 9	16.43$	16.43$
10 - 14	16.04$	16.04$
15 - 19	15.66$	15.66$
20 - 23	15.08$	15.08$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 23

Set of 1

IXGH32N60BU1. C(in): 2700pF. Cost): 270pF. Channel type: N. Trr Diode (Min.): 120ns. Function: Ic 60A @ 25°C, 32A @ 90°C, Icm 120A (pulsed). Collector current: 60A. Ic(pulse): 60.4k Ohms. Ic(T=100°C): 32A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 100 ns. Td(on): 25 ns. Housing: TO-247. Housing (according to data sheet): TO-247 ( AD ) HiPerFAST IGBT. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.3V. Collector/emitter voltage Vceo: 600V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 2.5V. Gate/emitter voltage VGE(th)max.: 5V. CE diode: yes. Quantity in stock updated on 15/01/2025, 07:25.

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Delivery in 2-3 days, with postal tracking!