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Semiconductors Transistors

IXFK34N80

IXFK34N80
[TITLE]
[TITLE]
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 1 24.60$ 24.60$
2 - 2 23.37$ 23.37$
3 - 4 22.14$ 22.14$
5 - 9 20.91$ 20.91$
10 - 14 20.42$ 20.42$
15 - 19 19.93$ 19.93$
20 - 40 19.19$ 19.19$
Quantity U.P
1 - 1 24.60$ 24.60$
2 - 2 23.37$ 23.37$
3 - 4 22.14$ 22.14$
5 - 9 20.91$ 20.91$
10 - 14 20.42$ 20.42$
15 - 19 19.93$ 19.93$
20 - 40 19.19$ 19.19$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 40
Set of 1

IXFK34N80. C(in): 7500pF. Cost): 920pF. Channel type: N. Conditioning: plastic tube. Drain-source protection : diode. Trr Diode (Min.): 250 ns. Type of transistor: MOSFET. Id(imp): 136A. ID (T=25°C): 34A. Idss (max): 2mA. IDss (min): 100uA. Pd (Power Dissipation, Max): 560W. On-resistance Rds On: 0.24 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 100 ns. Td(on): 45 ns. Technology: HiPerFet Power MOSFET. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264AA. Operating temperature: -55...+150°C. Voltage Vds(max): 800V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 25. Spec info: dv/dt 5V/ns. G-S Protection: no. Quantity in stock updated on 15/01/2025, 06:25.

Technical documentation

Equivalent products :

Quantity in stock : 30
IXFX34N80

IXFX34N80

C(in): 7500pF. Cost): 920pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Dra...
IXFX34N80
C(in): 7500pF. Cost): 920pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 250 ns. Type of transistor: MOSFET. Id(imp): 136A. ID (T=25°C): 34A. Idss (max): 2mA. IDss (min): 100uA. Number of terminals: 3. Pd (Power Dissipation, Max): 560W. On-resistance Rds On: 0.24 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 100 ns. Td(on): 45 ns. Technology: HiPerFet Power MOSFET. Housing: PLUS247. Housing (according to data sheet): PLUS-247 (TO247 without fixing hole). Operating temperature: -55...+150°C. Voltage Vds(max): 800V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 3V. Spec info: dv/dt 5V/ns. G-S Protection: no
IXFX34N80
C(in): 7500pF. Cost): 920pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 250 ns. Type of transistor: MOSFET. Id(imp): 136A. ID (T=25°C): 34A. Idss (max): 2mA. IDss (min): 100uA. Number of terminals: 3. Pd (Power Dissipation, Max): 560W. On-resistance Rds On: 0.24 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 100 ns. Td(on): 45 ns. Technology: HiPerFet Power MOSFET. Housing: PLUS247. Housing (according to data sheet): PLUS-247 (TO247 without fixing hole). Operating temperature: -55...+150°C. Voltage Vds(max): 800V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 3V. Spec info: dv/dt 5V/ns. G-S Protection: no
Set of 1
26.57$ VAT incl.
(26.57$ excl. VAT)
26.57$

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