Transistors

Channel type: N. Type of transistor: MOSFET power transistor. Max drain current: 11A. Power: 36W. On-resistance Rds On: 0.32 Ohms. Housing: TO-220F. ID (T=100°C): 7A. ID (T=25°C): 11A. Idss (max): 10uA. IDss (min): 1uA. Pd (Power Dissipation, Max): 36W. On-resistance Rds On: 0.33 Ohms. Assembly/installation: PCB through-hole mounting. Technology: SuperFET. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Operating temperature: -55...+150°C. Voltage Vds(max): 600V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Drain-source voltage (Vds): 650V

C(in): 1495pF. Cost): 235pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 490 ns. Type of transistor: MOSFET. Function: PDP TV, Uninterruptible Power Supply. Id(imp): 66A. ID (T=100°C): 9.9A. ID (T=25°C): 16.5A. Idss (max): 10uA. IDss (min): 1uA. Marking on the case: FDA16N50. Number of terminals: 3. Pd (Power Dissipation, Max): 205W. On-resistance Rds On: 0.31 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 65 ns. Td(on): 40 ns. Technology: UniFET MOSFET, DMOS technology. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Operating temperature: -55...+150°C. Voltage Vds(max): 500V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Spec info: Low Gate Charge. G-S Protection: no

C(in): 2280pF. Cost): 370pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 110 ns. Type of transistor: MOSFET. Idss (max): 100uA. IDss (min): 10uA. Marking on the case: FDA24N40F. Number of terminals: 3. Pd (Power Dissipation, Max): 235W. On-resistance Rds On: 0.15 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 120ns. Td(on): 40 ns. Technology: UniFET MOSFET, DMOS technology. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Operating temperature: -55...+150°C. Voltage Vds(max): 400V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: TO-3P. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: FDA50N50. Drain-source voltage Uds [V]: 500V. Drain Current Id [A] @ 25°C: 48A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.105 Ohms @ 24A. Gate breakdown voltage Ugs [V]: 5V. Switch-on time ton [nsec.]: 220 ns. Switch-off delay tf[nsec.]: 460 ns. Ciss Gate Capacitance [pF]: 6460pF. Maximum dissipation Ptot [W]: 625W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

C(in): 3090pF. Cost): 630pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 190 ns. Type of transistor: MOSFET. Function: PDP TV, AC/DC Converter. Id(imp): 236A. ID (T=100°C): 35A. ID (T=25°C): 59A. Idss (max): 10uA. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 392W. On-resistance Rds On: 0.041 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 90 ns. Td(on): 70 ns. Technology: UniFET MOSFET. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3PN. Operating temperature: -55...+150°C. Voltage Vds(max): 250V. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 3V. Drain-source protection : yes. G-S Protection: no

C(in): 3570pF. Cost): 750pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 210 ns. Type of transistor: MOSFET. Function: PDP TV, AC/DC Converter. Id(imp): 276A. ID (T=100°C): 44.2A. ID (T=25°C): 69A. Idss (max): 10uA. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 480W. On-resistance Rds On: 0.034 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 130 ns. Td(on): 95 ns. Technology: UniFET MOSFET. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3PN. Operating temperature: -55...+150°C. Voltage Vds(max): 250V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Drain-source protection : yes. G-S Protection: no

C(in): 1970pF. Cost): 250pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 28 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 100A. ID (T=25°C): 50A. Idss (max): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 60W. On-resistance Rds On: 0.0087 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 28 ns. Td(on): 11 ns. Technology: PowerTrench MOSFET. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): TO-263AB. Operating temperature: -55...+150°C. Voltage Vds(max): 40V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3V. Vgs(th) min.: 1V. Drain-source protection : yes. G-S Protection: no

C(in): 530pF. Cost): 105pF. Channel type: P. Conditioning: roll. Conditioning unit: 3000. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 16 ns. Type of transistor: MOSFET. Id(imp): 20A. ID (T=25°C): 4.3A. Idss (max): 1uA. IDss (min): 1uA. Note: screen printing/SMD code 365P. Marking on the case: 365 P. Number of terminals: 6. Pd (Power Dissipation, Max): 1.6W. On-resistance Rds On: 0.045 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 15 ns. Td(on): 7 ns. Technology: PowerTrench® MOSFET. Housing: TSOP. Housing (according to data sheet): SUPERSOT-6. Operating temperature: -55...+150°C. Voltage Vds(max): 35V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 1V. Function: Inverters, Power Supplies. G-S Protection: no

RoHS: yes. Component family: MOSFET, N-MOS, P-MOS. Housing: PCB soldering (SMD). Housing: SUPERSOT-6. Configuration: surface-mounted component (SMD). Number of terminals: 6. Drain-source voltage Uds [V]: 8V. Drain Current Id [A] @ 25°C: 1.5A/1.5A. Gate breakdown voltage Ugs [V]: 3V. Maximum dissipation Ptot [W]: 0.7W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

RoHS: yes. Component family: MOSFET, P-MOS. Housing: PCB soldering (SMD). Housing: SOT-23/6. Configuration: surface-mounted component (SMD). Number of terminals: 6. Manufacturer's marking: .638. Drain-source voltage Uds [V]: -20V. Drain Current Id [A] @ 25°C: -4.5A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.039 Ohms @ -4.5A. Gate breakdown voltage Ugs [V]: -1.5V. Switch-on time ton [nsec.]: 12 ns. Switch-off delay tf[nsec.]: 33 ns. Ciss Gate Capacitance [pF]: 1160pF. Maximum dissipation Ptot [W]: 1.6W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

Channel type: N-P. Marking on the case: 420. Pd (Power Dissipation, Max): 0.9W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: N&P PowerTrench MOSFET. Housing: TSOP. Housing (according to data sheet): SUPERSOT-6. Quantity per case: 2. Number of terminals: 6. Function: Rds-on 0.07 Ohms (Q1), 0.125 Ohms (Q2). Note: screen printing/SMD code 420

C(in): 700pF. Cost): 110pF. Channel type: P. Conditioning: roll. Conditioning unit: 3000. Quantity per case: 1. Type of transistor: MOSFET. Id(imp): 20A. ID (T=25°C): 4A. Idss (max): 10uA. IDss (min): 1uA. Note: screen printing/SMD code 642. Marking on the case: 642. Number of terminals: 6. Pd (Power Dissipation, Max): 1.6W. On-resistance Rds On: 0.045 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 120ns. Td(on): 6 ns. Technology: PowerTrench MOSFET. Housing: TSOP. Housing (according to data sheet): SUPERSOT-6. Operating temperature: -55...+150°C. Voltage Vds(max): 20V. Gate/source voltage Vgs: 8V. Vgs(th) max.: 1.5V. Vgs(th) min.: 0.4V. Function: Load Switch, Battery Protection. Spec info: Low Input Charge. Drain-source protection : yes. G-S Protection: yes

C(in): 630pF. Cost): 160pF. Channel type: P. Conditioning: roll. Conditioning unit: 3000. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 17 ns. Type of transistor: MOSFET. Id(imp): 20A. ID (T=25°C): 4A. Idss (max): 1uA. IDss (min): 250uA. Note: screen printing/SMD code FDC642P. Marking on the case: FDC642P. Number of terminals: 6. Pd (Power Dissipation, Max): 1.2W. On-resistance Rds On: 0.0525 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 23.5 ns. Td(on): 23 ns. Technology: PowerTrench MOSFET. Housing: SSOT. Housing (according to data sheet): SUPERSOT-6. Operating temperature: -55...+150°C. Voltage Vds(max): 20V. Gate/source voltage Vgs: 8V. Vgs(th) max.: 1.5V. Vgs(th) min.: 0.4V. Function: Load Switch, Battery Protection. Spec info: Faible charge de grille (6.9nC typique). G-S Protection: no

C(in): 2085pF. Cost): 360pF. Channel type: P. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 29 ns. Type of transistor: MOSFET. Function: 'High performance trench technology'. Id(imp): 100A. ID (T=100°C): 50A. ID (T=25°C): 58A. Idss (max): 1uA. Note: Logic level gated transistor. Marking on the case: FDD4141. Number of terminals: 2. Pd (Power Dissipation, Max): 69W. On-resistance Rds On: 12.3m Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 38 ns. Td(on): 10 ns. Technology: PowerTrench MOSFET. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Operating temperature: -55...+150°C. Voltage Vds(max): 40V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3V. Vgs(th) min.: 1V. Spec info: extremely low RDS(on) resistance. G-S Protection: no

RoHS: yes. C(in): 759pF. Cost): 90pF. Channel type: P. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): surface-mounted component (SMD). Type of transistor: MOSFET. Function: DC/DC voltage converter. Id(imp): 45A. ID (T=100°C): 15A. ID (T=25°C): 15A. Idss (max): 1uA. IDss (min): 1uA. Note: Logic level gated transistor. Marking on the case: FDD5614P. Number of terminals: 2. Pd (Power Dissipation, Max): 42W. On-resistance Rds On: 0.076 Ohms. Assembly/installation: surface-mounted component (SMD). Td(off): 19 ns. Td(on): 7 ns. Technology: PowerTrench MOSFET. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Operating temperature: -55...+175°C. Voltage Vds(max): 60V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3V. Vgs(th) min.: 1V. G-S Protection: no

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: D-PAK. Housing (JEDEC standard): TO-252. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: FDD5690. Drain-source voltage Uds [V]: 60V. Drain Current Id [A] @ 25°C: 30A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.023 Ohms @ 9A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 10 ns. Switch-off delay tf[nsec.]: 24 ns. Ciss Gate Capacitance [pF]: 1110pF. Maximum dissipation Ptot [W]: 50W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C. On-resistance Rds On: 0.023 Ohms. Assembly/installation: surface-mounted component (SMD). Td(off): 24 ns. Td(on): 10 ns. Technology: PowerTrench MOSFET. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Operating temperature: -55...+150°C. Voltage Vds(max): 60V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V

Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 25 ns. Type of transistor: MOSFET. Id(imp): 100A. ID (T=25°C): 50A. Idss (max): 1uA. Number of terminals: 2. Pd (Power Dissipation, Max): 52W. On-resistance Rds On: 0.0088 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: PowerTrench MOSFET. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Operating temperature: -55...+175°C. Voltage Vds(max): 30 v. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3V. G-S Protection: no

C(in): 1715pF. Cost): 440pF. Channel type: P. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 26 ns. Type of transistor: MOSFET. Function: DC/DC voltage converter. Id(imp): 100A. ID (T=100°C): 11A. ID (T=25°C): 40A. Idss (max): 1uA. Note: Logic level gated transistor. Number of terminals: 2. Pd (Power Dissipation, Max): 52W. On-resistance Rds On: 0.014 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 43 ns. Td(on): 17 ns. Technology: PowerTrench MOSFET. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Operating temperature: -55...+175°C. Voltage Vds(max): 30 v. Gate/source voltage Vgs: 25V. Vgs(th) max.: 3V. Vgs(th) min.: 1V. G-S Protection: no

C(in): 1400pF. Cost): 317pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 26 ns. Type of transistor: MOSFET. Id(imp): 100A. ID (T=100°C): 15A. ID (T=25°C): 59A. Idss (max): 59A. Marking on the case: FDD6635. Number of terminals: 2. Pd (Power Dissipation, Max): 55W. On-resistance Rds On: 0.016 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 28 ns. Td(on): 11 ns. Technology: PowerTrench MOSFET. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Operating temperature: -55...+150°C. Voltage Vds(max): 40V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3V. Vgs(th) min.: 1V. G-S Protection: no

C(in): 5070pF. Cost): 550pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Type of transistor: MOSFET. Function: DC/DC voltage converter. Id(imp): 100A. ID (T=100°C): 50A. ID (T=25°C): 65A. Idss (max): 1uA. Note: Logic level gated transistor. Number of terminals: 2. Pd (Power Dissipation, Max): 70W. On-resistance Rds On: 8.2M Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 69 ns. Td(on): 17 ns. Technology: Power Trench MOSFET. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Operating temperature: -55...+150°C. Voltage Vds(max): 30 v. Gate/source voltage Vgs: 12V. Vgs(th) max.: 2V. Vgs(th) min.: 0.8V. G-S Protection: no

C(in): 1715pF. Cost): 440pF. Channel type: P. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 26 ns. Type of transistor: MOSFET. Function: DC/DC voltage converter. Id(imp): 100A. ID (T=100°C): 11A. ID (T=25°C): 40A. Idss (max): 1uA. Note: Logic level gated transistor. Number of terminals: 2. Pd (Power Dissipation, Max): 52W. On-resistance Rds On: 0.014 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 43 ns. Td(on): 17 ns. Technology: PowerTrench MOSFET. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Operating temperature: -55...+175°C. Voltage Vds(max): 30 v. Gate/source voltage Vgs: 25V. Vgs(th) max.: 3V. Vgs(th) min.: 1V. G-S Protection: no

C(in): 575pF. Cost): 64pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 56.4 ns. Type of transistor: MOSFET. Id(imp): 36A. ID (T=100°C): 11.4A. ID (T=25°C): 18A. Idss (max): 500uA. IDss (min): 1uA. Note: High performance trench technology. Number of terminals: 2. Pd (Power Dissipation, Max): 56.8W. On-resistance Rds On: 61m Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 15.8 ns. Td(on): 10.3 ns. Technology: PowerTrench MOSFET. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Operating temperature: -55...+150°C. Voltage Vds(max): 150V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Function: Vitesse de commutation rapide, faible charge de grille. Spec info: extremely low RDS(on) resistance. Drain-source protection : yes. G-S Protection: no

C(in): 1970pF. Cost): 250pF. Channel type: N. Conditioning: roll. Conditioning unit: 2500. Quantity per case: 1. Trr Diode (Min.): 22 ns. Type of transistor: MOSFET. Id(imp): 100A. ID (T=100°C): 15.2A. ID (T=25°C): 57A. Idss (max): 1uA. IDss (min): 1uA. Marking on the case: FDD8447L. Number of terminals: 3. Pd (Power Dissipation, Max): 44W. On-resistance Rds On: 0.085 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 38 ns. Td(on): 12 ns. Technology: Power Trench MOSFET. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Operating temperature: -55...+150°C. Voltage Vds(max): 40V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3V. Vgs(th) min.: 1V. Function: Fast Switching, inverters, Power Supplies. Drain-source protection : yes. G-S Protection: no

C(in): 880pF. Cost): 195pF. Channel type: N. Conditioning: roll. Conditioning unit: 2500. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 23 ns. Type of transistor: MOSFET. Function: DC/DC voltage converter. ID (T=100°C): 11A. ID (T=25°C): 40A. Idss (max): 250uA. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 40W. On-resistance Rds On: 0.011 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 39 ns. Td(on): 7 ns. Technology: Power Trench MOSFET. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Operating temperature: -55...+150°C. Voltage Vds(max): 30 v. Gate/source voltage Vgs: 20V. Vgs(th) min.: 1.2V. G-S Protection: no

C(in): 6000pF. Cost): 820pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 64 ns. Type of transistor: MOSFET. Function: DC/DC voltage converter and UPS inverters. Id(imp): 80A. ID (T=100°C): 57A. ID (T=25°C): 80A. Idss (max): 250uA. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 310W. On-resistance Rds On: 0.009 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 90 ns. Td(on): 30 ns. Technology: N-Channel PowerTrench® MOSFET. Housing: TO-247. Housing (according to data sheet): TO-247-3. Operating temperature: -55...+175°C. Voltage Vds(max): 100V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no