FDD770N15A

Quantity	excl. VAT	VAT incl.
1 - 4	2.06$	2.06$
5 - 9	1.96$	1.96$
10 - 21	1.86$	1.86$

Quantity	U.P
1 - 4	2.06$	2.06$
5 - 9	1.96$	1.96$
10 - 21	1.86$	1.86$

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Quantity in stock : 21

Set of 1

FDD770N15A. C(in): 575pF. Cost): 64pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 56.4 ns. Type of transistor: MOSFET. Id(imp): 36A. ID (T=100°C): 11.4A. ID (T=25°C): 18A. Idss (max): 500uA. IDss (min): 1uA. Note: High performance trench technology. Number of terminals: 2. Pd (Power Dissipation, Max): 56.8W. On-resistance Rds On: 61m Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 15.8 ns. Td(on): 10.3 ns. Technology: PowerTrench MOSFET. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Operating temperature: -55...+150°C. Voltage Vds(max): 150V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Function: Vitesse de commutation rapide, faible charge de grille. Spec info: extremely low RDS(on) resistance. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 26/12/2024, 14:25.

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Delivery in 2-3 days, with postal tracking!