Transistors

RoHS: yes. Housing: PCB soldering. Housing: TO-220. Housing (JEDEC standard): TO-220. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: D45H11G. Collector-emitter voltage Uceo [V]: 80V. Collector current Ic [A], max.: 10A. Cutoff frequency ft [MHz]: 40 MHz. Maximum dissipation Ptot [W]: 70W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: PNP power transistor

Quantity per case: 1. Semiconductor material: silicon. Minimum hFE gain: 70. Collector current: 10A. Ic(pulse): 20A. Number of terminals: 3. Pd (Power Dissipation, Max): 60W. RoHS: no. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AB. Type of transistor: PNP. Vcbo: 30 v. Collector/emitter voltage Vceo: 30 v. Vebo: 5V

RoHS: yes. Housing: PCB soldering. Housing: TO-220. Housing (JEDEC standard): TO-220. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: D45H8G. Collector-emitter voltage Uceo [V]: 60V. Collector current Ic [A], max.: 10A. Cutoff frequency ft [MHz]: 40 MHz. Maximum dissipation Ptot [W]: 70W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: PNP power transistor

Type of transistor: Power Transistor. Polarity: PNP. Collector-Emitter Voltage VCEO: -80V. Collector current: -15A. Power: 83W. Max frequency: 50 MHz. Housing: TO–220AB

RoHS: yes. Device family: Tool. Tool type: assortment of 24 tools

C(in): 37pF. Channel type: N. Collector current: 600A. Ic(pulse): 1200A. Ic(T=100°C): 600A. Dimensions: 172x89x37mm. Pd (Power Dissipation, Max): 3350W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 0.7 ns. Td(on): 0.21 ns. Housing: Other. Housing (according to data sheet): Other. Operating temperature: -40...+150°C. Saturation voltage VCE(sat): 1.7V. Collector/emitter voltage Vceo: 1200V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 5.8V. Number of terminals: 10. Spec info: ICRM--Tp=1mS 1200A. Function: VCE(sat) 1.7V (Ic=600A, VGE=15V, 25°C). CE diode: yes. Germanium diode: no

RoHS: yes. Housing: PCB soldering (SMD). Housing: SO8. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: C3025LS. Drain-source voltage Uds [V]: 30V/-30V. Drain Current Id [A] @ 25°C: 6A/-4.2A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.025 Ohms/0.05 Ohms @ 6/-4.2A. Gate breakdown voltage Ugs [V]: 1.2V/-2V. Switch-on time ton [nsec.]: 11.2 ns/7.5 ns. Switch-off delay tf[nsec.]: 14.5/28.2 ns. Ciss Gate Capacitance [pF]: 590/631pF. Maximum dissipation Ptot [W]: 1.5W. Component family: MOSFET, 2 x N-MOS, 2 x P-MOS. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

C(in): 1802pF. Cost): 415pF. Channel type: P. Quantity per case: 1. Trr Diode (Min.): 30 ns. Type of transistor: MOSFET. Id(imp): 80A. ID (T=100°C): 9A. ID (T=25°C): 12A. Idss (max): 1uA. Marking on the case: P3020LS. Number of terminals: 8. Pd (Power Dissipation, Max): 2.5W. On-resistance Rds On: 0.0116 Ohms. Assembly/installation: surface-mounted component (SMD). Td(off): 46 ns. Td(on): 5.1 ns. Technology: SINGLE P-CHANNEL ENHANCEMENT MODE MOSFET. Housing: SO. Housing (according to data sheet): SO-8. Operating temperature: -55...+150°C. Voltage Vds(max): 30 v. Vgs(th) max.: 2V. Vgs(th) min.: 1V. Various: Fast Switching Speed, Low Input/Output Leakage. Function: Low On-Resistance, Low Gate Threshold Voltage, Low Input Capacitance. Drain-source protection : yes. G-S Protection: no

Quantity per case: 1. Semiconductor material: silicon. FT: 250 MHz. Collector current: 50mA. Ic(pulse): 100mA. Marking on the case: 14. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 150W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing (according to data sheet): SOT-416 ( 1.6x0.8mm ). Type of transistor: PNP. Vcbo: 50V. Collector/emitter voltage Vceo: 50V. Spec info: screen printing/SMD code 14

Quantity per case: 1. Semiconductor material: silicon. FT: 250 MHz. Function: Digital Transistor (Bias Resistor Built-in). Collector current: 50mA. Ic(pulse): 100mA. Marking on the case: 14. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 200mW. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( 2.9x1.6mm ). Type of transistor: PNP. Vcbo: 50V. Collector/emitter voltage Vceo: 50V. Spec info: screen printing/SMD code 14

Quantity per case: 1. Semiconductor material: silicon. FT: 250 MHz. Function: Digital transistors (built-in resistors). Collector current: 0.1A. Marking on the case: 15. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.2W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Type of transistor: PNP. Collector/emitter voltage Vceo: 50V. Spec info: screen printing/SMD code 15. BE diode: no. CE diode: yes

Quantity per case: 1. Semiconductor material: silicon. Collector current: 0.1A. Housing: SC-72. Housing (according to data sheet): SC-72 ( D143 ). Type of transistor: PNP. Collector/emitter voltage Vceo: 50V

Resistor B: 4.7k Ohms. BE resistor: 47k Ohms. Cost): 3pF. Quantity per case: 1. Semiconductor material: silicon. Function: PNP resistor-equipped transistor. Minimum hFE gain: 100. Collector current: 100mA. Ic(pulse): 100mA. Number of terminals: 3. Pd (Power Dissipation, Max): 0.25W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.1V. Collector/emitter voltage Vceo: 50V. Vebo: 10V. Spec info: screen printing/SMD code 19. BE diode: no. CE diode: no

Resistor B: 10k Ohms. BE resistor: 10k Ohms. Quantity per case: 1. Semiconductor material: silicon. FT: 250 MHz. Function: DTR.. Collector current: 50mA. Ic(pulse): 100mA. Marking on the case: 24. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.2W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Power: 0.2W. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SC-59. Type of transistor: NPN. Vcbo: 50V. Collector/emitter voltage Vceo: 50V. Spec info: screen printing/SMD code 24. BE diode: no. CE diode: no

Resistor B: 4.7k Ohms. Quantity per case: 1. Semiconductor material: silicon. FT: kHz. Function: Transistor with built-in bias resistor. Minimum hFE gain: 200. Collector current: 100mA. Note: screen printing/SMD code 33. Marking on the case: *33, P33, t33, w33. Number of terminals: 3. Pd (Power Dissipation, Max): 0.25W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.1V. Collector/emitter voltage Vceo: 50V. Vebo: 5V. Spec info: R1 typ=4.7k Ohms, R2 typ=NC (open). BE diode: no. CE diode: no

Quantity per case: 1. Semiconductor material: silicon. FT: kHz. Production date: 2014/49. Minimum hFE gain: 100. Collector current: 100mA. Ic(pulse): 100mA. Marking on the case: 18. Number of terminals: 3. Pd (Power Dissipation, Max): 0.25W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.1V. Collector/emitter voltage Vceo: 50V. Vebo: 10V

Resistor B: 47k Ohms. BE resistor: 47k Ohms. Quantity per case: 1. Semiconductor material: silicon. Collector current: 0.03A. Marking on the case: 26. Assembly/installation: surface-mounted component (SMD). Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23. Type of transistor: NPN. Collector/emitter voltage Vceo: 50V. Spec info: screen printing/SMD code 26. BE diode: no. CE diode: no

Type of transistor: NPN transistor. Polarity: NPN. Collector current: 0.1A. Power: 0.3W. Max frequency: 250MHz. Housing: SC-72. BE resistor: 47k+22k Ohms

Pinout: 1 - G, 2 - S, 3 - D. C(in): 900pF. Cost): 500pF. Channel type: N. Quantity per case: 1. Various: HI-FI Power Amplifier. Type of transistor: MOSFET. Function: AUDIO POWER Amplifier MOSFET. ID (T=25°C): 16A. Idss (max): 10mA. Number of terminals: 3. Pd (Power Dissipation, Max): 250W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 90 ns. Td(on): 155 ns. Technology: N–CHANNEL POWER MOSFET. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264. Operating temperature: -55...+150°C. Voltage Vds(max): 200V. Gate/source voltage Vgs: 14V. Gate/source voltage (off) max.: 1.5V. Gate/source voltage (off) min.: 0.1V. Spec info: complementary transistor (pair) ECW20P20. Drain-source protection : yes. G-S Protection: no

Pinout: 1 - G, 2 - S, 3 - D. C(in): 1850pF. Cost): 850pF. Channel type: P. Quantity per case: 1. Various: HI-FI Power Amplifier. Type of transistor: MOSFET. Function: AUDIO POWER Amplifier MOSFET. ID (T=25°C): 16A. Idss (max): 10mA. Number of terminals: 3. Pd (Power Dissipation, Max): 250W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 105 ns. Td(on): 150 ns. Technology: P-Channel MOSFET Power Transistor. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264. Operating temperature: -55...+150°C. Voltage Vds(max): 200V. Gate/source voltage Vgs: 14V. Gate/source voltage (off) max.: 1.5V. Gate/source voltage (off) min.: 0.1V. Spec info: complementary transistor (pair) ECW20N20. Drain-source protection : yes. G-S Protection: no

Pinout: 1 - G, 2 - S, 3 - D. C(in): 500pF. Cost): 300pF. Channel type: N. Quantity per case: 1. Various: HI-FI Power Amplifier. Type of transistor: MOSFET. Function: AUDIO POWER Amplifier MOSFET. ID (T=25°C): 8A. Idss (max): 10mA. Number of terminals: 3. Pd (Power Dissipation, Max): 125W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 50 ns. Td(on): 100 ns. Technology: N–CHANNEL POWER MOSFET. Housing: TO-247. Housing (according to data sheet): TO-247. Operating temperature: -55...+150°C. Voltage Vds(max): 200V. Gate/source voltage Vgs: 14V. Gate/source voltage (off) max.: 1.5V. Gate/source voltage (off) min.: 0.15V. Spec info: complementary transistor (pair) ECX10P20. Drain-source protection : no. G-S Protection: no

Pinout: 1 - G, 2 - S, 3 - D. C(in): 500pF. Cost): 300pF. Channel type: P. Quantity per case: 1. Various: HI-FI Power Amplifier. Type of transistor: MOSFET. Function: AUDIO POWER Amplifier MOSFET. ID (T=25°C): 8A. Idss (max): 10mA. Number of terminals: 3. Pd (Power Dissipation, Max): 125W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 50 ns. Td(on): 100 ns. Technology: P-Channel MOSFET Power Transistor. Housing: TO-247. Housing (according to data sheet): TO-247. Operating temperature: -55...+150°C. Voltage Vds(max): 200V. Gate/source voltage Vgs: 14V. Gate/source voltage (off) max.: 1.5V. Gate/source voltage (off) min.: 0.15V. Spec info: complementary transistor (pair) ECX10N20. Drain-source protection : no. G-S Protection: no

Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: kHz. Function: Power Darlington NPN Transistor Module. Max hFE gain: 300. Minimum hFE gain: 300. Collector current: 100A. Ic(pulse): 150A. Note: Screwed. Number of terminals: 4. Temperature: +150°C. Pd (Power Dissipation, Max): 225W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.6us. Tf(min): 0.35us. Housing: ISOPLUS247 ( TO-247 ). Housing (according to data sheet): ISOTOP ( SOT-227 ). Type of transistor: NPN & NPN. Vcbo: 300V. Saturation voltage VCE(sat): 1.25V. Collector/emitter voltage Vceo: 400V. Vebo: 7V. Spec info: Single Dual Emitter

RoHS: yes. Component family: Darlington NPN Power Transistor. Housing: ISOTOP. Configuration: Screwed. Number of terminals: 4. Manufacturer's marking: ESM6045DV. Collector-emitter voltage Uceo [V]: 450V. Collector current Ic [A], max.: 84A. Maximum dissipation Ptot [W]: 250W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

C(in): 1148pF. Cost): 671pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 390 ns. Type of transistor: MOSFET. Function: ID pulse 33A. Id(imp): 33A. ID (T=100°C): 7A. ID (T=25°C): 11A. Idss (max): 10uA. IDss (min): 1uA. Pd (Power Dissipation, Max): 125W. On-resistance Rds On: 0.32 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 119 ns. Td(on): 34 ns. Technology: SuperFET MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220. Operating temperature: -55...+150°C. Voltage Vds(max): 600V. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Drain-source protection : yes. G-S Protection: no