FDD6635

Quantity	excl. VAT	VAT incl.
1 - 4	1.89$	1.89$
5 - 9	1.80$	1.80$
10 - 24	1.70$	1.70$
25 - 49	1.61$	1.61$
50 - 82	1.57$	1.57$

Quantity	U.P
1 - 4	1.89$	1.89$
5 - 9	1.80$	1.80$
10 - 24	1.70$	1.70$
25 - 49	1.61$	1.61$
50 - 82	1.57$	1.57$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 82

Set of 1

FDD6635. C(in): 1400pF. Cost): 317pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 26 ns. Type of transistor: MOSFET. Id(imp): 100A. ID (T=100°C): 15A. ID (T=25°C): 59A. Idss (max): 59A. Marking on the case: FDD6635. Number of terminals: 2. Pd (Power Dissipation, Max): 55W. On-resistance Rds On: 0.016 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 28 ns. Td(on): 11 ns. Technology: PowerTrench MOSFET. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Operating temperature: -55...+150°C. Voltage Vds(max): 40V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3V. Vgs(th) min.: 1V. G-S Protection: no. Quantity in stock updated on 26/12/2024, 18:25.

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Delivery in 2-3 days, with postal tracking!