FDD5614P

Quantity	excl. VAT	VAT incl.
1 - 4	2.29$	2.29$
5 - 9	2.35$	2.35$
10 - 24	2.24$	2.24$
25 - 49	2.13$	2.13$
50 - 99	2.08$	2.08$
100 - 117	2.04$	2.04$

Quantity	U.P
1 - 4	2.29$	2.29$
5 - 9	2.35$	2.35$
10 - 24	2.24$	2.24$
25 - 49	2.13$	2.13$
50 - 99	2.08$	2.08$
100 - 117	2.04$	2.04$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 117

Set of 1

FDD5614P. RoHS: yes. C(in): 759pF. Cost): 90pF. Channel type: P. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): surface-mounted component (SMD). Type of transistor: MOSFET. Function: DC/DC voltage converter. Id(imp): 45A. ID (T=100°C): 15A. ID (T=25°C): 15A. Idss (max): 1uA. IDss (min): 1uA. Note: Logic level gated transistor. Marking on the case: FDD5614P. Number of terminals: 2. Pd (Power Dissipation, Max): 42W. On-resistance Rds On: 0.076 Ohms. Assembly/installation: surface-mounted component (SMD). Td(off): 19 ns. Td(on): 7 ns. Technology: PowerTrench MOSFET. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Operating temperature: -55...+175°C. Voltage Vds(max): 60V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3V. Vgs(th) min.: 1V. G-S Protection: no. Quantity in stock updated on 25/12/2024, 04:25.

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Delivery in 2-3 days, with postal tracking!