FDD8878

FDD8878. C(in): 880pF. Cost): 195pF. Channel type: N. Conditioning: roll. Conditioning unit: 2500. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 23 ns. Type of transistor: MOSFET. Function: DC/DC voltage converter. ID (T=100°C): 11A. ID (T=25°C): 40A. Idss (max): 250uA. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 40W. On-resistance Rds On: 0.011 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 39 ns. Td(on): 7 ns. Technology: Power Trench MOSFET. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Operating temperature: -55...+150°C. Voltage Vds(max): 30 v. Gate/source voltage Vgs: 20V. Vgs(th) min.: 1.2V. G-S Protection: no. Quantity in stock updated on 26/12/2024, 13:25.