FDD4141

Quantity	excl. VAT	VAT incl.
1 - 4	1.74$	1.74$
5 - 9	1.66$	1.66$
10 - 15	1.57$	1.57$

Quantity	U.P
1 - 4	1.74$	1.74$
5 - 9	1.66$	1.66$
10 - 15	1.57$	1.57$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 15

Set of 1

FDD4141. C(in): 2085pF. Cost): 360pF. Channel type: P. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 29 ns. Type of transistor: MOSFET. Function: 'High performance trench technology'. Id(imp): 100A. ID (T=100°C): 50A. ID (T=25°C): 58A. Idss (max): 1uA. Note: Logic level gated transistor. Marking on the case: FDD4141. Number of terminals: 2. Pd (Power Dissipation, Max): 69W. On-resistance Rds On: 12.3m Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 38 ns. Td(on): 10 ns. Technology: PowerTrench MOSFET. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Operating temperature: -55...+150°C. Voltage Vds(max): 40V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3V. Vgs(th) min.: 1V. Spec info: extremely low RDS(on) resistance. G-S Protection: no. Quantity in stock updated on 11/01/2025, 19:25.

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Delivery in 2-3 days, with postal tracking!