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Electronic components and equipment, for businesses and individuals

FDA59N25

FDA59N25
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[TITLE]
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Quantity excl. VAT VAT incl.
1 - 1 5.84$ 5.84$
2 - 2 5.54$ 5.54$
3 - 4 5.25$ 5.25$
5 - 9 4.96$ 4.96$
10 - 19 4.84$ 4.84$
20 - 29 4.73$ 4.73$
30 - 76 4.55$ 4.55$
Quantity U.P
1 - 1 5.84$ 5.84$
2 - 2 5.54$ 5.54$
3 - 4 5.25$ 5.25$
5 - 9 4.96$ 4.96$
10 - 19 4.84$ 4.84$
20 - 29 4.73$ 4.73$
30 - 76 4.55$ 4.55$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 76
Set of 1

FDA59N25. C(in): 3090pF. Cost): 630pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 190 ns. Type of transistor: MOSFET. Function: PDP TV, AC/DC Converter. Id(imp): 236A. ID (T=100°C): 35A. ID (T=25°C): 59A. Idss (max): 10uA. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 392W. On-resistance Rds On: 0.041 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 90 ns. Td(on): 70 ns. Technology: UniFET MOSFET. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3PN. Operating temperature: -55...+150°C. Voltage Vds(max): 250V. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 3V. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 24/12/2024, 02:25.

Equivalent products :

Quantity in stock : 41
IRFP4227

IRFP4227

C(in): 4600pF. Cost): 460pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Qua...
IRFP4227
C(in): 4600pF. Cost): 460pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Quantity per case: 1. Trr Diode (Min.): 100 ns. Type of transistor: MOSFET. Function: PDP MOSFET. Id(imp): 260A. ID (T=100°C): 46A. ID (T=25°C): 65A. Idss (max): 1mA. IDss (min): 20uA. Number of terminals: 3. Temperature: +175°C. Pd (Power Dissipation, Max): 330W. On-resistance Rds On: 0.021 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 21 ns. Td(on): 33 ns. Technology: HEXFET Power-MOSFET, PDP SWITCH. Housing: TO-247. Housing (according to data sheet): TO-247AC. Operating temperature: -40...+175°C. Voltage Vds(max): 200V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Drain-source protection : yes. G-S Protection: no
IRFP4227
C(in): 4600pF. Cost): 460pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Quantity per case: 1. Trr Diode (Min.): 100 ns. Type of transistor: MOSFET. Function: PDP MOSFET. Id(imp): 260A. ID (T=100°C): 46A. ID (T=25°C): 65A. Idss (max): 1mA. IDss (min): 20uA. Number of terminals: 3. Temperature: +175°C. Pd (Power Dissipation, Max): 330W. On-resistance Rds On: 0.021 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 21 ns. Td(on): 33 ns. Technology: HEXFET Power-MOSFET, PDP SWITCH. Housing: TO-247. Housing (according to data sheet): TO-247AC. Operating temperature: -40...+175°C. Voltage Vds(max): 200V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Drain-source protection : yes. G-S Protection: no
Set of 1
5.66$ VAT incl.
(5.66$ excl. VAT)
5.66$

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MUR1620CT

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TDA7294V

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EC12E2424407

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Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Function: Ultrafast SMPS. Forward current ...
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IRFP90N20D

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C(in): 1070pF. Cost): 6040pF. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Fun...
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Quantity in stock : 112
IRF1404

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C(in): 7360pF. Cost): 1680pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 71 ns. Type o...
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MMBT3904LT1G

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RoHS: yes. Resistor B: yes. BE resistor: PCB soldering (SMD). C(in): SOT-23. Cost): 1.6pF. Quantity ...
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