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Semiconductors
Transistors

Transistors

3183 products available
Products per page :
1...454647 4849...128
Quantity in stock : 820
BD679

BD679

RoHS: yes. Component family: Darlington NPN Power Transistor. Housing: PCB soldering. Housing: TO-12...
BD679
RoHS: yes. Component family: Darlington NPN Power Transistor. Housing: PCB soldering. Housing: TO-126. Housing (JEDEC standard): SOT-32. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BD679. Collector-emitter voltage Uceo [V]: 80V. Collector current Ic [A], max.: 4A. Maximum dissipation Ptot [W]: 40W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C
BD679
RoHS: yes. Component family: Darlington NPN Power Transistor. Housing: PCB soldering. Housing: TO-126. Housing (JEDEC standard): SOT-32. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BD679. Collector-emitter voltage Uceo [V]: 80V. Collector current Ic [A], max.: 4A. Maximum dissipation Ptot [W]: 40W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C
Set of 1
1.02$ VAT incl.
(1.02$ excl. VAT)
1.02$
Quantity in stock : 39
BD679A

BD679A

Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Mini...
BD679A
Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Minimum hFE gain: 750. Collector current: 4A. Ic(pulse): 6A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 40W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-126. Type of transistor: NPN. Operating temperature: -...+150°C. Vcbo: 80V. Saturation voltage VCE(sat): 2.8V. Collector/emitter voltage Vceo: 80V. BE resistor: R1 typ=15k Ohms, R2 typ=100 Ohms. Spec info: complementary transistor (pair) BD680A. Housing: TO-126 (TO-225, SOT-32). BE diode: no. CE diode: yes
BD679A
Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Minimum hFE gain: 750. Collector current: 4A. Ic(pulse): 6A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 40W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-126. Type of transistor: NPN. Operating temperature: -...+150°C. Vcbo: 80V. Saturation voltage VCE(sat): 2.8V. Collector/emitter voltage Vceo: 80V. BE resistor: R1 typ=15k Ohms, R2 typ=100 Ohms. Spec info: complementary transistor (pair) BD680A. Housing: TO-126 (TO-225, SOT-32). BE diode: no. CE diode: yes
Set of 1
0.72$ VAT incl.
(0.72$ excl. VAT)
0.72$
Quantity in stock : 377
BD680

BD680

RoHS: yes. Resistor B: yes. C(in): TO-126. Cost): SOT-32. Darlington transistor?: yes. Quantity per ...
BD680
RoHS: yes. Resistor B: yes. C(in): TO-126. Cost): SOT-32. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Function: hFE 750. Collector current: 4A. Number of terminals: 3. Pd (Power Dissipation, Max): 40W. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-126. Type of transistor: PNP. Collector/emitter voltage Vceo: 80V. BE resistor: R1 typ=15k Ohms, R2 typ=100 Ohms. Spec info: complementary transistor (pair) BD679. Housing: TO-126 (TO-225, SOT-32). BE diode: no. CE diode: yes
BD680
RoHS: yes. Resistor B: yes. C(in): TO-126. Cost): SOT-32. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Function: hFE 750. Collector current: 4A. Number of terminals: 3. Pd (Power Dissipation, Max): 40W. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-126. Type of transistor: PNP. Collector/emitter voltage Vceo: 80V. BE resistor: R1 typ=15k Ohms, R2 typ=100 Ohms. Spec info: complementary transistor (pair) BD679. Housing: TO-126 (TO-225, SOT-32). BE diode: no. CE diode: yes
Set of 1
0.52$ VAT incl.
(0.52$ excl. VAT)
0.52$
Quantity in stock : 4
BD680-DIV

BD680-DIV

Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Coll...
BD680-DIV
Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Collector current: 4A. Pd (Power Dissipation, Max): 40W. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-126. Type of transistor: PNP. Collector/emitter voltage Vceo: 80V. Housing: TO-126 (TO-225, SOT-32)
BD680-DIV
Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Collector current: 4A. Pd (Power Dissipation, Max): 40W. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-126. Type of transistor: PNP. Collector/emitter voltage Vceo: 80V. Housing: TO-126 (TO-225, SOT-32)
Set of 1
0.46$ VAT incl.
(0.46$ excl. VAT)
0.46$
Quantity in stock : 4
BD680A

BD680A

Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 10MHz. Funct...
BD680A
Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 10MHz. Function: Power Linear and Switching. Minimum hFE gain: 750. Collector current: 4A. Ic(pulse): 6A. Pd (Power Dissipation, Max): 14W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-126F. Housing (according to data sheet): TO-126F. Type of transistor: PNP. Vcbo: 80V. Maximum saturation voltage VCE(sat): 2.8V. Collector/emitter voltage Vceo: 80V. Vebo: 5V. Spec info: complementary transistor (pair) BD679A. BE diode: no. CE diode: no
BD680A
Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 10MHz. Function: Power Linear and Switching. Minimum hFE gain: 750. Collector current: 4A. Ic(pulse): 6A. Pd (Power Dissipation, Max): 14W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-126F. Housing (according to data sheet): TO-126F. Type of transistor: PNP. Vcbo: 80V. Maximum saturation voltage VCE(sat): 2.8V. Collector/emitter voltage Vceo: 80V. Vebo: 5V. Spec info: complementary transistor (pair) BD679A. BE diode: no. CE diode: no
Set of 1
0.78$ VAT incl.
(0.78$ excl. VAT)
0.78$
Quantity in stock : 1541
BD681

BD681

Collector current: 4A. Type of transistor: Darlington Power Transistor. Polarity: NPN. Type: Darling...
BD681
Collector current: 4A. Type of transistor: Darlington Power Transistor. Polarity: NPN. Type: Darlington transistor. Built-in diode: yes. Collector-Emitter Voltage VCEO: 100V. Power: 40W. Housing: TO-126. Semiconductor material: silicon. FT: 10 MHz. Max hFE gain: 750. Ic(pulse): 6A. Pd (Power Dissipation, Max): 40W. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-126. Type of transistor: NPN. Vcbo: 100V. Maximum saturation voltage VCE(sat): 2.5V. Collector/emitter voltage Vceo: 100V. Vebo: 5V. Spec info: complementary transistor (pair) BD682. Housing: TO-126 (TO-225, SOT-32)
BD681
Collector current: 4A. Type of transistor: Darlington Power Transistor. Polarity: NPN. Type: Darlington transistor. Built-in diode: yes. Collector-Emitter Voltage VCEO: 100V. Power: 40W. Housing: TO-126. Semiconductor material: silicon. FT: 10 MHz. Max hFE gain: 750. Ic(pulse): 6A. Pd (Power Dissipation, Max): 40W. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-126. Type of transistor: NPN. Vcbo: 100V. Maximum saturation voltage VCE(sat): 2.5V. Collector/emitter voltage Vceo: 100V. Vebo: 5V. Spec info: complementary transistor (pair) BD682. Housing: TO-126 (TO-225, SOT-32)
Set of 1
0.55$ VAT incl.
(0.55$ excl. VAT)
0.55$
Quantity in stock : 249
BD681G

BD681G

RoHS: yes. Component family: Darlington NPN Power Transistor. Housing: PCB soldering. Housing: TO-22...
BD681G
RoHS: yes. Component family: Darlington NPN Power Transistor. Housing: PCB soldering. Housing: TO-225. Housing (JEDEC standard): TO-225. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BD681G. Collector-emitter voltage Uceo [V]: 100V. Collector current Ic [A], max.: 4A. Maximum dissipation Ptot [W]: 40W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C
BD681G
RoHS: yes. Component family: Darlington NPN Power Transistor. Housing: PCB soldering. Housing: TO-225. Housing (JEDEC standard): TO-225. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BD681G. Collector-emitter voltage Uceo [V]: 100V. Collector current Ic [A], max.: 4A. Maximum dissipation Ptot [W]: 40W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C
Set of 1
0.65$ VAT incl.
(0.65$ excl. VAT)
0.65$
Quantity in stock : 1343
BD682

BD682

Housing: TO-126. Collector-emitter voltage Uceo [V]: 100V. Collector current Ic [A], max.: 4A. Cutof...
BD682
Housing: TO-126. Collector-emitter voltage Uceo [V]: 100V. Collector current Ic [A], max.: 4A. Cutoff frequency ft [MHz]: NF-L. Maximum dissipation Ptot [W]: 40W. Pd (Power Dissipation, Max): 40W. Type of transistor: PNP. Collector/emitter voltage Vceo: 100V. Type of transistor: Darlington Power Transistor. Polarity: PNP. Type: Darlington transistor. Built-in diode: yes. Collector-Emitter Voltage VCEO: -100V. Collector current: -4A. Power: 40W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Spec info: complementary transistor (pair) BD681
BD682
Housing: TO-126. Collector-emitter voltage Uceo [V]: 100V. Collector current Ic [A], max.: 4A. Cutoff frequency ft [MHz]: NF-L. Maximum dissipation Ptot [W]: 40W. Pd (Power Dissipation, Max): 40W. Type of transistor: PNP. Collector/emitter voltage Vceo: 100V. Type of transistor: Darlington Power Transistor. Polarity: PNP. Type: Darlington transistor. Built-in diode: yes. Collector-Emitter Voltage VCEO: -100V. Collector current: -4A. Power: 40W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Spec info: complementary transistor (pair) BD681
Set of 1
0.61$ VAT incl.
(0.61$ excl. VAT)
0.61$
Quantity in stock : 507
BD682G

BD682G

RoHS: yes. Component family: Darlington PNP Power Transistor. Housing: PCB soldering. Housing: TO-22...
BD682G
RoHS: yes. Component family: Darlington PNP Power Transistor. Housing: PCB soldering. Housing: TO-225. Housing (JEDEC standard): TO-225. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BD682G. Collector-emitter voltage Uceo [V]: 100V. Collector current Ic [A], max.: 4A. Maximum dissipation Ptot [W]: 40W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C
BD682G
RoHS: yes. Component family: Darlington PNP Power Transistor. Housing: PCB soldering. Housing: TO-225. Housing (JEDEC standard): TO-225. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BD682G. Collector-emitter voltage Uceo [V]: 100V. Collector current Ic [A], max.: 4A. Maximum dissipation Ptot [W]: 40W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C
Set of 1
0.98$ VAT incl.
(0.98$ excl. VAT)
0.98$
Quantity in stock : 93
BD684

BD684

Darlington transistor?: yes. Semiconductor material: silicon. FT: 10 MHz. Function: NF-L. Collector ...
BD684
Darlington transistor?: yes. Semiconductor material: silicon. FT: 10 MHz. Function: NF-L. Collector current: 4A. Pd (Power Dissipation, Max): 40W. Type of transistor: PNP. Collector/emitter voltage Vceo: 120V. Note: >750. Quantity per case: 1
BD684
Darlington transistor?: yes. Semiconductor material: silicon. FT: 10 MHz. Function: NF-L. Collector current: 4A. Pd (Power Dissipation, Max): 40W. Type of transistor: PNP. Collector/emitter voltage Vceo: 120V. Note: >750. Quantity per case: 1
Set of 1
0.92$ VAT incl.
(0.92$ excl. VAT)
0.92$
Quantity in stock : 3
BD789

BD789

Semiconductor material: silicon. FT: 50 MHz. Function: NF-L. Collector current: 4A. Pd (Power Dissip...
BD789
Semiconductor material: silicon. FT: 50 MHz. Function: NF-L. Collector current: 4A. Pd (Power Dissipation, Max): 15W. Type of transistor: NPN. Collector/emitter voltage Vceo: 80V. Quantity per case: 1
BD789
Semiconductor material: silicon. FT: 50 MHz. Function: NF-L. Collector current: 4A. Pd (Power Dissipation, Max): 15W. Type of transistor: NPN. Collector/emitter voltage Vceo: 80V. Quantity per case: 1
Set of 1
1.10$ VAT incl.
(1.10$ excl. VAT)
1.10$
Quantity in stock : 77
BD809G

BD809G

RoHS: yes. Housing: PCB soldering. Housing: TO-220. Housing (JEDEC standard): TO-220. Configuration:...
BD809G
RoHS: yes. Housing: PCB soldering. Housing: TO-220. Housing (JEDEC standard): TO-220. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BD809G. Collector-emitter voltage Uceo [V]: 80V. Collector current Ic [A], max.: 10A. Cutoff frequency ft [MHz]: 1.5 MHz. Maximum dissipation Ptot [W]: 90W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: NPN power transistor
BD809G
RoHS: yes. Housing: PCB soldering. Housing: TO-220. Housing (JEDEC standard): TO-220. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BD809G. Collector-emitter voltage Uceo [V]: 80V. Collector current Ic [A], max.: 10A. Cutoff frequency ft [MHz]: 1.5 MHz. Maximum dissipation Ptot [W]: 90W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: NPN power transistor
Set of 1
1.96$ VAT incl.
(1.96$ excl. VAT)
1.96$
Quantity in stock : 74
BD810G

BD810G

RoHS: yes. Housing: PCB soldering. Housing: TO-220. Housing (JEDEC standard): TO-220. Configuration:...
BD810G
RoHS: yes. Housing: PCB soldering. Housing: TO-220. Housing (JEDEC standard): TO-220. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BD810G. Collector-emitter voltage Uceo [V]: 80V. Collector current Ic [A], max.: 10A. Cutoff frequency ft [MHz]: 1.5 MHz. Maximum dissipation Ptot [W]: 90W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: PNP power transistor
BD810G
RoHS: yes. Housing: PCB soldering. Housing: TO-220. Housing (JEDEC standard): TO-220. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BD810G. Collector-emitter voltage Uceo [V]: 80V. Collector current Ic [A], max.: 10A. Cutoff frequency ft [MHz]: 1.5 MHz. Maximum dissipation Ptot [W]: 90W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: PNP power transistor
Set of 1
2.51$ VAT incl.
(2.51$ excl. VAT)
2.51$
Quantity in stock : 26
BD830

BD830

Semiconductor material: silicon. FT: 75 MHz. Function: NF-L. Collector current: 1A. Pd (Power Dissip...
BD830
Semiconductor material: silicon. FT: 75 MHz. Function: NF-L. Collector current: 1A. Pd (Power Dissipation, Max): 8W. Housing: TO-202. Housing (according to data sheet): TO-202; SOT128B. Type of transistor: PNP. Collector/emitter voltage Vceo: 100V. Quantity per case: 1. Spec info: complementary transistor (pair) BD829. BE diode: no. CE diode: no
BD830
Semiconductor material: silicon. FT: 75 MHz. Function: NF-L. Collector current: 1A. Pd (Power Dissipation, Max): 8W. Housing: TO-202. Housing (according to data sheet): TO-202; SOT128B. Type of transistor: PNP. Collector/emitter voltage Vceo: 100V. Quantity per case: 1. Spec info: complementary transistor (pair) BD829. BE diode: no. CE diode: no
Set of 1
0.60$ VAT incl.
(0.60$ excl. VAT)
0.60$
Quantity in stock : 1
BD901

BD901

Darlington transistor?: yes. Semiconductor material: silicon. FT: 1 MHz. Function: NF-L. Minimum hFE...
BD901
Darlington transistor?: yes. Semiconductor material: silicon. FT: 1 MHz. Function: NF-L. Minimum hFE gain: 750. Collector current: 8A. Pd (Power Dissipation, Max): 70W. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: NPN. Collector/emitter voltage Vceo: 100V. Quantity per case: 1. Spec info: complementary transistor (pair) BD902
BD901
Darlington transistor?: yes. Semiconductor material: silicon. FT: 1 MHz. Function: NF-L. Minimum hFE gain: 750. Collector current: 8A. Pd (Power Dissipation, Max): 70W. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: NPN. Collector/emitter voltage Vceo: 100V. Quantity per case: 1. Spec info: complementary transistor (pair) BD902
Set of 1
3.77$ VAT incl.
(3.77$ excl. VAT)
3.77$
Quantity in stock : 1
BD902

BD902

Darlington transistor?: yes. Semiconductor material: silicon. FT: 1 MHz. Function: NF-L. Collector c...
BD902
Darlington transistor?: yes. Semiconductor material: silicon. FT: 1 MHz. Function: NF-L. Collector current: 8A. Pd (Power Dissipation, Max): 70W. Type of transistor: PNP. Collector/emitter voltage Vceo: 100V. Note: >750. Quantity per case: 1. Spec info: complementary transistor (pair) BD901
BD902
Darlington transistor?: yes. Semiconductor material: silicon. FT: 1 MHz. Function: NF-L. Collector current: 8A. Pd (Power Dissipation, Max): 70W. Type of transistor: PNP. Collector/emitter voltage Vceo: 100V. Note: >750. Quantity per case: 1. Spec info: complementary transistor (pair) BD901
Set of 1
4.35$ VAT incl.
(4.35$ excl. VAT)
4.35$
Quantity in stock : 1
BD906

BD906

Semiconductor material: silicon. FT: 3 MHz. Function: NF/L. Collector current: 15A. Pd (Power Dissip...
BD906
Semiconductor material: silicon. FT: 3 MHz. Function: NF/L. Collector current: 15A. Pd (Power Dissipation, Max): 90W. Type of transistor: PNP. Collector/emitter voltage Vceo: 45V. Quantity per case: 1. CE diode: yes
BD906
Semiconductor material: silicon. FT: 3 MHz. Function: NF/L. Collector current: 15A. Pd (Power Dissipation, Max): 90W. Type of transistor: PNP. Collector/emitter voltage Vceo: 45V. Quantity per case: 1. CE diode: yes
Set of 1
0.93$ VAT incl.
(0.93$ excl. VAT)
0.93$
Quantity in stock : 1169
BD911

BD911

Semiconductor material: silicon. FT: 3 MHz. Function: Power Linear and Switching. Max hFE gain: 250....
BD911
Semiconductor material: silicon. FT: 3 MHz. Function: Power Linear and Switching. Max hFE gain: 250. Minimum hFE gain: 40. Collector current: 15A. Temperature: +150°C. Pd (Power Dissipation, Max): 90W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: NPN. Vcbo: 100V. Saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 100V. Vebo: 5V. Resistor B: NPN power transistor. BE resistor: 100V. C(in): 15A. Cost): 90W. Number of terminals: 3. Quantity per case: 1. Spec info: complementary transistor (pair) BD912. BE diode: no. CE diode: no
BD911
Semiconductor material: silicon. FT: 3 MHz. Function: Power Linear and Switching. Max hFE gain: 250. Minimum hFE gain: 40. Collector current: 15A. Temperature: +150°C. Pd (Power Dissipation, Max): 90W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: NPN. Vcbo: 100V. Saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 100V. Vebo: 5V. Resistor B: NPN power transistor. BE resistor: 100V. C(in): 15A. Cost): 90W. Number of terminals: 3. Quantity per case: 1. Spec info: complementary transistor (pair) BD912. BE diode: no. CE diode: no
Set of 1
0.91$ VAT incl.
(0.91$ excl. VAT)
0.91$
Quantity in stock : 151
BD911-ST

BD911-ST

Semiconductor material: silicon. FT: 3 MHz. Function: NF/L. Collector current: 15A. Pd (Power Dissip...
BD911-ST
Semiconductor material: silicon. FT: 3 MHz. Function: NF/L. Collector current: 15A. Pd (Power Dissipation, Max): 90W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: NPN. Collector/emitter voltage Vceo: 100V. Quantity per case: 1. Spec info: complementary transistor (pair) BD912. BE diode: no. CE diode: no
BD911-ST
Semiconductor material: silicon. FT: 3 MHz. Function: NF/L. Collector current: 15A. Pd (Power Dissipation, Max): 90W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: NPN. Collector/emitter voltage Vceo: 100V. Quantity per case: 1. Spec info: complementary transistor (pair) BD912. BE diode: no. CE diode: no
Set of 1
1.35$ VAT incl.
(1.35$ excl. VAT)
1.35$
Quantity in stock : 384
BD912

BD912

Resistor B: yes. BE resistor: PCB soldering. C(in): TO-220AB. Cost): TO-220AB. Semiconductor materia...
BD912
Resistor B: yes. BE resistor: PCB soldering. C(in): TO-220AB. Cost): TO-220AB. Semiconductor material: silicon. FT: 3 MHz. Function: Power Linear and Switching. Max hFE gain: 250. Minimum hFE gain: 40. Collector current: 15A. Ic(pulse): +150°C. Temperature: +150°C. Pd (Power Dissipation, Max): 90W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: PNP. Vcbo: 100V. Saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 100V. Vebo: 5V. Number of terminals: 3. Quantity per case: 1. Spec info: complementary transistor (pair) BD911. BE diode: no. CE diode: no
BD912
Resistor B: yes. BE resistor: PCB soldering. C(in): TO-220AB. Cost): TO-220AB. Semiconductor material: silicon. FT: 3 MHz. Function: Power Linear and Switching. Max hFE gain: 250. Minimum hFE gain: 40. Collector current: 15A. Ic(pulse): +150°C. Temperature: +150°C. Pd (Power Dissipation, Max): 90W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: PNP. Vcbo: 100V. Saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 100V. Vebo: 5V. Number of terminals: 3. Quantity per case: 1. Spec info: complementary transistor (pair) BD911. BE diode: no. CE diode: no
Set of 1
1.05$ VAT incl.
(1.05$ excl. VAT)
1.05$
Quantity in stock : 114
BD912-ST

BD912-ST

Semiconductor material: silicon. FT: 3 MHz. Function: NF/L. Collector current: 15A. Pd (Power Dissip...
BD912-ST
Semiconductor material: silicon. FT: 3 MHz. Function: NF/L. Collector current: 15A. Pd (Power Dissipation, Max): 90W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-225. Type of transistor: PNP. Collector/emitter voltage Vceo: 100V. Number of terminals: 3. Quantity per case: 1. Spec info: complementary transistor (pair) BD911. Housing: TO-126 (TO-225, SOT-32)
BD912-ST
Semiconductor material: silicon. FT: 3 MHz. Function: NF/L. Collector current: 15A. Pd (Power Dissipation, Max): 90W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-225. Type of transistor: PNP. Collector/emitter voltage Vceo: 100V. Number of terminals: 3. Quantity per case: 1. Spec info: complementary transistor (pair) BD911. Housing: TO-126 (TO-225, SOT-32)
Set of 1
1.35$ VAT incl.
(1.35$ excl. VAT)
1.35$
Quantity in stock : 5
BD948

BD948

Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Collector current: 5A. Pd (Power Dissipa...
BD948
Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Collector current: 5A. Pd (Power Dissipation, Max): 40W. Type of transistor: PNP. Collector/emitter voltage Vceo: 45V. Quantity per case: 1
BD948
Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Collector current: 5A. Pd (Power Dissipation, Max): 40W. Type of transistor: PNP. Collector/emitter voltage Vceo: 45V. Quantity per case: 1
Set of 1
0.70$ VAT incl.
(0.70$ excl. VAT)
0.70$
Quantity in stock : 55
BDP949

BDP949

ROHS: Yes. Housing: SOT223...
BDP949
ROHS: Yes. Housing: SOT223
BDP949
ROHS: Yes. Housing: SOT223
Set of 1
1.76$ VAT incl.
(1.76$ excl. VAT)
1.76$
Quantity in stock : 1968
BDP949H6327XTSA1

BDP949H6327XTSA1

RoHS: yes. Housing: PCB soldering (SMD). Housing: SOT-223. Housing (JEDEC standard): TO-264. Configu...
BDP949H6327XTSA1
RoHS: yes. Housing: PCB soldering (SMD). Housing: SOT-223. Housing (JEDEC standard): TO-264. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: BDP949. Collector-emitter voltage Uceo [V]: 60V. Collector current Ic [A], max.: 3A. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 3W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: NPN power transistor
BDP949H6327XTSA1
RoHS: yes. Housing: PCB soldering (SMD). Housing: SOT-223. Housing (JEDEC standard): TO-264. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: BDP949. Collector-emitter voltage Uceo [V]: 60V. Collector current Ic [A], max.: 3A. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 3W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: NPN power transistor
Set of 1
1.63$ VAT incl.
(1.63$ excl. VAT)
1.63$
Quantity in stock : 2627
BDP950

BDP950

RoHS: yes. Housing: PCB soldering (SMD). Housing: SOT-223. Housing (JEDEC standard): TO-264. Configu...
BDP950
RoHS: yes. Housing: PCB soldering (SMD). Housing: SOT-223. Housing (JEDEC standard): TO-264. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: BDP950. Collector-emitter voltage Uceo [V]: 60V. Collector current Ic [A], max.: 3A. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 5W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: PNP power transistor
BDP950
RoHS: yes. Housing: PCB soldering (SMD). Housing: SOT-223. Housing (JEDEC standard): TO-264. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: BDP950. Collector-emitter voltage Uceo [V]: 60V. Collector current Ic [A], max.: 3A. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 5W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: PNP power transistor
Set of 1
0.08$ VAT incl.
(0.08$ excl. VAT)
0.08$
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