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BD901

BD901
[TITLE]
Quantity excl. VAT VAT incl.
1 - 1 3.77$ 3.77$
Quantity U.P
1 - 1 3.77$ 3.77$
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Quantity in stock : 1
Set of 1

BD901. Darlington transistor?: yes. Semiconductor material: silicon. FT: 1 MHz. Function: NF-L. Minimum hFE gain: 750. Collector current: 8A. Pd (Power Dissipation, Max): 70W. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: NPN. Collector/emitter voltage Vceo: 100V. Quantity per case: 1. Spec info: complementary transistor (pair) BD902. Quantity in stock updated on 26/12/2024, 14:25.

Equivalent products :

Quantity in stock : 267
BDX33C

BDX33C

Collector current: 10A. Housing: TO-220. Max hFE gain: 750. Minimum hFE gain: 100. Ic(pulse): 15A. T...
BDX33C
Collector current: 10A. Housing: TO-220. Max hFE gain: 750. Minimum hFE gain: 100. Ic(pulse): 15A. Temperature: +150°C. Pd (Power Dissipation, Max): 70W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-220AB. Type of transistor: NPN. Vcbo: 100V. Saturation voltage VCE(sat): 2.5V. Collector/emitter voltage Vceo: 100V. Vebo: 2.5V. Type of transistor: Darlington Power Transistor. Polarity: NPN. Type: Darlington transistor. Built-in diode: yes. Collector-Emitter Voltage VCEO: 100V. Power: 70W. Max frequency: 20MHz. DC Collector/Base Gain hFE min.: 750. Number of terminals: 3. Function: 10k Ohms (R1), 150 Ohms (R2). Spec info: complementary transistor (pair) BDX34C
BDX33C
Collector current: 10A. Housing: TO-220. Max hFE gain: 750. Minimum hFE gain: 100. Ic(pulse): 15A. Temperature: +150°C. Pd (Power Dissipation, Max): 70W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-220AB. Type of transistor: NPN. Vcbo: 100V. Saturation voltage VCE(sat): 2.5V. Collector/emitter voltage Vceo: 100V. Vebo: 2.5V. Type of transistor: Darlington Power Transistor. Polarity: NPN. Type: Darlington transistor. Built-in diode: yes. Collector-Emitter Voltage VCEO: 100V. Power: 70W. Max frequency: 20MHz. DC Collector/Base Gain hFE min.: 750. Number of terminals: 3. Function: 10k Ohms (R1), 150 Ohms (R2). Spec info: complementary transistor (pair) BDX34C
Set of 1
0.79$ VAT incl.
(0.79$ excl. VAT)
0.79$

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BDX34C

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Resistor B: 10k Ohms. BE resistor: 150 Ohms. Darlington transistor?: yes. Quantity per case: 2. Semi...
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BYP35A6

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Diameter: 12.75mm. Cj: 250pF. Dielectric structure: casing connected to the cathode. Trr Diode (Min....
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1N4148

1N4148

Cj: 4pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 4 ns. Semicond...
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BT151-500R

BT151-500R

RoHS: yes. Component family: thyristor. Housing: PCB soldering. Housing: TO-220AB. Housing (JEDEC st...
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MCR100-8

MCR100-8

Function: Sensitive Gate, Silicon Controlled Rectifiers. Igt (Type): 0.2mA. Ih (Type): 5mA. Note: 50...
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BT151X-500R

BT151X-500R

IT(RSM) (TC=85°C): 12A. VDRM: 500V. Function: thyristor for 50Hz applications. Housing: TO-220-F. I...
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405290120000

405290120000

Coil Voltage: 12VDC. Contact material: AgNi. Switch mode: 2x ON-ON. Number of terminals: 8. Dimensio...
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2N3773

2N3773

Quantity per case: 1. Semiconductor material: silicon. FT: 0.2 MHz. Collector current: 16A. Pd (Powe...
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Quantity in stock : 173
BUV27

BUV27

Semiconductor material: silicon. Function: Fast Switching Speed. Collector current: 12A. Ic(pulse): ...
BUV27
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BAT-H-SN-17

BAT-H-SN-17

Note: side by side. Note: 3xAA. Note: flat mount...
BAT-H-SN-17
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