Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 0.91$ | 0.91$ |
5 - 9 | 0.87$ | 0.87$ |
10 - 24 | 0.82$ | 0.82$ |
25 - 49 | 0.78$ | 0.78$ |
50 - 99 | 0.76$ | 0.76$ |
100 - 249 | 0.75$ | 0.75$ |
250 - 1174 | 0.73$ | 0.73$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 0.91$ | 0.91$ |
5 - 9 | 0.87$ | 0.87$ |
10 - 24 | 0.82$ | 0.82$ |
25 - 49 | 0.78$ | 0.78$ |
50 - 99 | 0.76$ | 0.76$ |
100 - 249 | 0.75$ | 0.75$ |
250 - 1174 | 0.73$ | 0.73$ |
BD911. Semiconductor material: silicon. FT: 3 MHz. Function: Power Linear and Switching. Max hFE gain: 250. Minimum hFE gain: 40. Collector current: 15A. Temperature: +150°C. Pd (Power Dissipation, Max): 90W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: NPN. Vcbo: 100V. Saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 100V. Vebo: 5V. Resistor B: NPN power transistor. BE resistor: 100V. C(in): 15A. Cost): 90W. Number of terminals: 3. Quantity per case: 1. Spec info: complementary transistor (pair) BD912. BE diode: no. CE diode: no. Quantity in stock updated on 24/12/2024, 13:25.
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