Electronic components and equipment, for businesses and individuals

BD680

BD680
[TITLE]
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 9 0.52$ 0.52$
10 - 24 0.50$ 0.50$
25 - 49 0.47$ 0.47$
50 - 99 0.43$ 0.43$
100 - 249 0.40$ 0.40$
250 - 377 0.40$ 0.40$
Quantity U.P
1 - 9 0.52$ 0.52$
10 - 24 0.50$ 0.50$
25 - 49 0.47$ 0.47$
50 - 99 0.43$ 0.43$
100 - 249 0.40$ 0.40$
250 - 377 0.40$ 0.40$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 377
Set of 1

BD680. RoHS: yes. Resistor B: yes. C(in): TO-126. Cost): SOT-32. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Function: hFE 750. Collector current: 4A. Number of terminals: 3. Pd (Power Dissipation, Max): 40W. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-126. Type of transistor: PNP. Collector/emitter voltage Vceo: 80V. BE resistor: R1 typ=15k Ohms, R2 typ=100 Ohms. Spec info: complementary transistor (pair) BD679. Housing: TO-126 (TO-225, SOT-32). BE diode: no. CE diode: yes. Quantity in stock updated on 10/01/2025, 20:25.

Equivalent products :

Quantity in stock : 1343
BD682

BD682

Housing: TO-126. Collector-emitter voltage Uceo [V]: 100V. Collector current Ic [A], max.: 4A. Cutof...
BD682
Housing: TO-126. Collector-emitter voltage Uceo [V]: 100V. Collector current Ic [A], max.: 4A. Cutoff frequency ft [MHz]: NF-L. Maximum dissipation Ptot [W]: 40W. Pd (Power Dissipation, Max): 40W. Type of transistor: PNP. Collector/emitter voltage Vceo: 100V. Type of transistor: Darlington Power Transistor. Polarity: PNP. Type: Darlington transistor. Built-in diode: yes. Collector-Emitter Voltage VCEO: -100V. Collector current: -4A. Power: 40W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Spec info: complementary transistor (pair) BD681
BD682
Housing: TO-126. Collector-emitter voltage Uceo [V]: 100V. Collector current Ic [A], max.: 4A. Cutoff frequency ft [MHz]: NF-L. Maximum dissipation Ptot [W]: 40W. Pd (Power Dissipation, Max): 40W. Type of transistor: PNP. Collector/emitter voltage Vceo: 100V. Type of transistor: Darlington Power Transistor. Polarity: PNP. Type: Darlington transistor. Built-in diode: yes. Collector-Emitter Voltage VCEO: -100V. Collector current: -4A. Power: 40W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Spec info: complementary transistor (pair) BD681
Set of 1
0.61$ VAT incl.
(0.61$ excl. VAT)
0.61$
Quantity in stock : 4
BD680-DIV

BD680-DIV

Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Coll...
BD680-DIV
Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Collector current: 4A. Pd (Power Dissipation, Max): 40W. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-126. Type of transistor: PNP. Collector/emitter voltage Vceo: 80V. Housing: TO-126 (TO-225, SOT-32)
BD680-DIV
Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Collector current: 4A. Pd (Power Dissipation, Max): 40W. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-126. Type of transistor: PNP. Collector/emitter voltage Vceo: 80V. Housing: TO-126 (TO-225, SOT-32)
Set of 1
0.46$ VAT incl.
(0.46$ excl. VAT)
0.46$

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