BD906
| Quantity | excl. VAT | VAT incl. |
|---|---|---|
| 1 - 1 | 0.93$ | 0.93$ |
| Quantity | U.P | |
|---|---|---|
| 1 - 1 | 0.93$ | 0.93$ |
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BD906. Semiconductor material: silicon. FT: 3 MHz. Function: NF/L. Collector current: 15A. Pd (Power Dissipation, Max): 90W. Type of transistor: PNP. Collector/emitter voltage Vceo: 45V. Quantity per case: 1. CE diode: yes. Quantity in stock updated on 10/01/2025, 20:25.
Equivalent products :
BD912-ST
Semiconductor material: silicon. FT: 3 MHz. Function: NF/L. Collector current: 15A. Pd (Power Dissip...
Semiconductor material: silicon. FT: 3 MHz. Function: NF/L. Collector current: 15A. Pd (Power Dissipation, Max): 90W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-225. Type of transistor: PNP. Collector/emitter voltage Vceo: 100V. Number of terminals: 3. Quantity per case: 1. Spec info: complementary transistor (pair) BD911. Housing: TO-126 (TO-225, SOT-32)
Semiconductor material: silicon. FT: 3 MHz. Function: NF/L. Collector current: 15A. Pd (Power Dissipation, Max): 90W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-225. Type of transistor: PNP. Collector/emitter voltage Vceo: 100V. Number of terminals: 3. Quantity per case: 1. Spec info: complementary transistor (pair) BD911. Housing: TO-126 (TO-225, SOT-32)
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