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Semiconductors
Transistors

Transistors

3183 products available
Products per page :
1...464748 4950...128
Quantity in stock : 8
BDT64C

BDT64C

Darlington transistor?: yes. Semiconductor material: silicon. FT: 10 MHz. Function: NF-L. Max hFE ga...
BDT64C
Darlington transistor?: yes. Semiconductor material: silicon. FT: 10 MHz. Function: NF-L. Max hFE gain: 1500. Minimum hFE gain: 750. Collector current: 12A. Ic(pulse): 20A. Temperature: +150°C. Pd (Power Dissipation, Max): 125W. Assembly/installation: PCB through-hole mounting. Technology: Darlington transistor. Tf(max): 2.5us. Tf(min): 0.5us. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: PNP. Vcbo: 120V. Saturation voltage VCE(sat): 2V. Collector/emitter voltage Vceo: 120V. Vebo: 2.5V. Quantity per case: 2. Number of terminals: 3. Note: 3k Ohms (R1), 45 Ohms (R2). Spec info: complementary transistor (pair) BDT65C. BE diode: yes. CE diode: yes
BDT64C
Darlington transistor?: yes. Semiconductor material: silicon. FT: 10 MHz. Function: NF-L. Max hFE gain: 1500. Minimum hFE gain: 750. Collector current: 12A. Ic(pulse): 20A. Temperature: +150°C. Pd (Power Dissipation, Max): 125W. Assembly/installation: PCB through-hole mounting. Technology: Darlington transistor. Tf(max): 2.5us. Tf(min): 0.5us. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: PNP. Vcbo: 120V. Saturation voltage VCE(sat): 2V. Collector/emitter voltage Vceo: 120V. Vebo: 2.5V. Quantity per case: 2. Number of terminals: 3. Note: 3k Ohms (R1), 45 Ohms (R2). Spec info: complementary transistor (pair) BDT65C. BE diode: yes. CE diode: yes
Set of 1
4.74$ VAT incl.
(4.74$ excl. VAT)
4.74$
Quantity in stock : 5
BDT65C

BDT65C

Darlington transistor?: 1. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Collec...
BDT65C
Darlington transistor?: 1. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Collector current: 12A. Pd (Power Dissipation, Max): 125W. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: NPN. Collector/emitter voltage Vceo: 120V. Function: hFE 1000. Spec info: complementary transistor (pair) BDT64C. BE diode: yes. CE diode: yes
BDT65C
Darlington transistor?: 1. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Collector current: 12A. Pd (Power Dissipation, Max): 125W. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: NPN. Collector/emitter voltage Vceo: 120V. Function: hFE 1000. Spec info: complementary transistor (pair) BDT64C. BE diode: yes. CE diode: yes
Set of 1
4.16$ VAT incl.
(4.16$ excl. VAT)
4.16$
Quantity in stock : 4
BDT86

BDT86

Semiconductor material: silicon. FT: 20 MHz. Collector current: 15A. Pd (Power Dissipation, Max): 12...
BDT86
Semiconductor material: silicon. FT: 20 MHz. Collector current: 15A. Pd (Power Dissipation, Max): 125W. Type of transistor: PNP. Collector/emitter voltage Vceo: 100V. Quantity per case: 1. Spec info: 130.42144
BDT86
Semiconductor material: silicon. FT: 20 MHz. Collector current: 15A. Pd (Power Dissipation, Max): 125W. Type of transistor: PNP. Collector/emitter voltage Vceo: 100V. Quantity per case: 1. Spec info: 130.42144
Set of 1
4.55$ VAT incl.
(4.55$ excl. VAT)
4.55$
Quantity in stock : 95
BDV64BG

BDV64BG

RoHS: yes. Component family: Darlington PNP Power Transistor. Housing: PCB soldering. Housing: TO-24...
BDV64BG
RoHS: yes. Component family: Darlington PNP Power Transistor. Housing: PCB soldering. Housing: TO-247. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BDV64BG. Collector-emitter voltage Uceo [V]: 100V. Collector current Ic [A], max.: 10A. Cutoff frequency ft [MHz]: 1000. Maximum dissipation Ptot [W]: 125W. Pd (Power Dissipation, Max): 125W. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-247. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 100V. Maximum saturation voltage VCE(sat): 2V. Collector/emitter voltage Vceo: 100V. Vebo: 5V. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Spec info: complementary transistor (pair) BDV65B
BDV64BG
RoHS: yes. Component family: Darlington PNP Power Transistor. Housing: PCB soldering. Housing: TO-247. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BDV64BG. Collector-emitter voltage Uceo [V]: 100V. Collector current Ic [A], max.: 10A. Cutoff frequency ft [MHz]: 1000. Maximum dissipation Ptot [W]: 125W. Pd (Power Dissipation, Max): 125W. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-247. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 100V. Maximum saturation voltage VCE(sat): 2V. Collector/emitter voltage Vceo: 100V. Vebo: 5V. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Spec info: complementary transistor (pair) BDV65B
Set of 1
4.19$ VAT incl.
(4.19$ excl. VAT)
4.19$
Out of stock
BDV64C

BDV64C

Darlington transistor?: yes. Semiconductor material: silicon. Collector current: 12A. Pd (Power Diss...
BDV64C
Darlington transistor?: yes. Semiconductor material: silicon. Collector current: 12A. Pd (Power Dissipation, Max): 125W. Assembly/installation: PCB through-hole mounting. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): SOT-93. Type of transistor: PNP. Collector/emitter voltage Vceo: 120V. Function: hFE 1000. Quantity per case: 1. Spec info: complementary transistor (pair) BDV65C
BDV64C
Darlington transistor?: yes. Semiconductor material: silicon. Collector current: 12A. Pd (Power Dissipation, Max): 125W. Assembly/installation: PCB through-hole mounting. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): SOT-93. Type of transistor: PNP. Collector/emitter voltage Vceo: 120V. Function: hFE 1000. Quantity per case: 1. Spec info: complementary transistor (pair) BDV65C
Set of 1
7.33$ VAT incl.
(7.33$ excl. VAT)
7.33$
Quantity in stock : 21
BDV64C-POW

BDV64C-POW

Darlington transistor?: yes. Semiconductor material: silicon. Minimum hFE gain: 1000. Collector curr...
BDV64C-POW
Darlington transistor?: yes. Semiconductor material: silicon. Minimum hFE gain: 1000. Collector current: 12A. Ic(pulse): 15A. Pd (Power Dissipation, Max): 125W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): SOT-93. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 120V. Saturation voltage VCE(sat): 2V. Collector/emitter voltage Vceo: 120V. Vebo: 5V. Number of terminals: 3. Quantity per case: 1. Spec info: complementary transistor (pair) BDV65C. BE diode: no. CE diode: no
BDV64C-POW
Darlington transistor?: yes. Semiconductor material: silicon. Minimum hFE gain: 1000. Collector current: 12A. Ic(pulse): 15A. Pd (Power Dissipation, Max): 125W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): SOT-93. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 120V. Saturation voltage VCE(sat): 2V. Collector/emitter voltage Vceo: 120V. Vebo: 5V. Number of terminals: 3. Quantity per case: 1. Spec info: complementary transistor (pair) BDV65C. BE diode: no. CE diode: no
Set of 1
6.70$ VAT incl.
(6.70$ excl. VAT)
6.70$
Quantity in stock : 114
BDV65BG

BDV65BG

RoHS: yes. Component family: Darlington NPN Power Transistor. Housing: PCB soldering. Housing: TO-24...
BDV65BG
RoHS: yes. Component family: Darlington NPN Power Transistor. Housing: PCB soldering. Housing: TO-247. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BDV65BG. Collector-emitter voltage Uceo [V]: 100V. Collector current Ic [A], max.: 10A. Cutoff frequency ft [MHz]: 1000. Maximum dissipation Ptot [W]: 125W. Pd (Power Dissipation, Max): 125W. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-247. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 100V. Maximum saturation voltage VCE(sat): 2V. Collector/emitter voltage Vceo: 100V. Vebo: 5V. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Spec info: complementary transistor (pair) BDV64B
BDV65BG
RoHS: yes. Component family: Darlington NPN Power Transistor. Housing: PCB soldering. Housing: TO-247. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BDV65BG. Collector-emitter voltage Uceo [V]: 100V. Collector current Ic [A], max.: 10A. Cutoff frequency ft [MHz]: 1000. Maximum dissipation Ptot [W]: 125W. Pd (Power Dissipation, Max): 125W. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-247. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 100V. Maximum saturation voltage VCE(sat): 2V. Collector/emitter voltage Vceo: 100V. Vebo: 5V. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Spec info: complementary transistor (pair) BDV64B
Set of 1
4.26$ VAT incl.
(4.26$ excl. VAT)
4.26$
Quantity in stock : 100
BDW42G

BDW42G

RoHS: yes. Component family: Darlington NPN Power Transistor. Housing: PCB soldering. Housing: TO-22...
BDW42G
RoHS: yes. Component family: Darlington NPN Power Transistor. Housing: PCB soldering. Housing: TO-220. Housing (JEDEC standard): TO-220. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BDW42G. Collector-emitter voltage Uceo [V]: 100V. Collector current Ic [A], max.: 15A. Cutoff frequency ft [MHz]: 4 MHz. Maximum dissipation Ptot [W]: 85W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C
BDW42G
RoHS: yes. Component family: Darlington NPN Power Transistor. Housing: PCB soldering. Housing: TO-220. Housing (JEDEC standard): TO-220. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BDW42G. Collector-emitter voltage Uceo [V]: 100V. Collector current Ic [A], max.: 15A. Cutoff frequency ft [MHz]: 4 MHz. Maximum dissipation Ptot [W]: 85W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C
Set of 1
2.51$ VAT incl.
(2.51$ excl. VAT)
2.51$
Quantity in stock : 375
BDW47G

BDW47G

RoHS: yes. Component family: Darlington PNP Power Transistor. Housing: PCB soldering. Housing: TO-22...
BDW47G
RoHS: yes. Component family: Darlington PNP Power Transistor. Housing: PCB soldering. Housing: TO-220. Housing (JEDEC standard): TO-220. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BDW47G. Collector-emitter voltage Uceo [V]: 100V. Collector current Ic [A], max.: 15A. Cutoff frequency ft [MHz]: 4 MHz. Maximum dissipation Ptot [W]: 85W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C
BDW47G
RoHS: yes. Component family: Darlington PNP Power Transistor. Housing: PCB soldering. Housing: TO-220. Housing (JEDEC standard): TO-220. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BDW47G. Collector-emitter voltage Uceo [V]: 100V. Collector current Ic [A], max.: 15A. Cutoff frequency ft [MHz]: 4 MHz. Maximum dissipation Ptot [W]: 85W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C
Set of 1
2.51$ VAT incl.
(2.51$ excl. VAT)
2.51$
Quantity in stock : 408
BDW83C

BDW83C

RoHS: yes. Component family: Darlington NPN Power Transistor. Housing: PCB soldering. Housing: SOT-9...
BDW83C
RoHS: yes. Component family: Darlington NPN Power Transistor. Housing: PCB soldering. Housing: SOT-93. Housing (JEDEC standard): SOT-93. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BDW83C. Collector-emitter voltage Uceo [V]: 100V. Collector current Ic [A], max.: 15A. Maximum dissipation Ptot [W]: 125W. Assembly/installation: PCB through-hole mounting. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): SOT-93. Type of transistor: NPN. Collector/emitter voltage Vceo: 100V. Cutoff frequency ft [MHz]: hFE 750 (@3V, 6A). Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C
BDW83C
RoHS: yes. Component family: Darlington NPN Power Transistor. Housing: PCB soldering. Housing: SOT-93. Housing (JEDEC standard): SOT-93. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BDW83C. Collector-emitter voltage Uceo [V]: 100V. Collector current Ic [A], max.: 15A. Maximum dissipation Ptot [W]: 125W. Assembly/installation: PCB through-hole mounting. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): SOT-93. Type of transistor: NPN. Collector/emitter voltage Vceo: 100V. Cutoff frequency ft [MHz]: hFE 750 (@3V, 6A). Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C
Set of 1
2.64$ VAT incl.
(2.64$ excl. VAT)
2.64$
Quantity in stock : 57
BDW83C-PMC

BDW83C-PMC

Darlington transistor?: yes. Semiconductor material: silicon. FT: 1 MHz. Max hFE gain: 20000. Minimu...
BDW83C-PMC
Darlington transistor?: yes. Semiconductor material: silicon. FT: 1 MHz. Max hFE gain: 20000. Minimum hFE gain: 750. Collector current: 15A. Temperature: +150°C. Pd (Power Dissipation, Max): 150W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 7us. Tf(min): 0.9us. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Type of transistor: NPN. Vcbo: 100V. Saturation voltage VCE(sat): 2.5V. Collector/emitter voltage Vceo: 100V. Vebo: 5V. Number of terminals: 3. Quantity per case: 1. Spec info: complementary transistor (pair) BDW84C
BDW83C-PMC
Darlington transistor?: yes. Semiconductor material: silicon. FT: 1 MHz. Max hFE gain: 20000. Minimum hFE gain: 750. Collector current: 15A. Temperature: +150°C. Pd (Power Dissipation, Max): 150W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 7us. Tf(min): 0.9us. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Type of transistor: NPN. Vcbo: 100V. Saturation voltage VCE(sat): 2.5V. Collector/emitter voltage Vceo: 100V. Vebo: 5V. Number of terminals: 3. Quantity per case: 1. Spec info: complementary transistor (pair) BDW84C
Set of 1
2.41$ VAT incl.
(2.41$ excl. VAT)
2.41$
Out of stock
BDW83D-PMC

BDW83D-PMC

Darlington transistor?: yes. Semiconductor material: silicon. FT: 1 MHz. Collector current: 15A. Pd ...
BDW83D-PMC
Darlington transistor?: yes. Semiconductor material: silicon. FT: 1 MHz. Collector current: 15A. Pd (Power Dissipation, Max): 125W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Type of transistor: NPN. Collector/emitter voltage Vceo: 120V. Number of terminals: 3. Function: hFE 750 (@3V, 6A). Quantity per case: 1. Spec info: complementary transistor (pair) BDW84D
BDW83D-PMC
Darlington transistor?: yes. Semiconductor material: silicon. FT: 1 MHz. Collector current: 15A. Pd (Power Dissipation, Max): 125W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Type of transistor: NPN. Collector/emitter voltage Vceo: 120V. Number of terminals: 3. Function: hFE 750 (@3V, 6A). Quantity per case: 1. Spec info: complementary transistor (pair) BDW84D
Set of 1
2.46$ VAT incl.
(2.46$ excl. VAT)
2.46$
Quantity in stock : 14
BDW84C

BDW84C

Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 1 MHz. Funct...
BDW84C
Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 1 MHz. Function: hFE 750 (@3V, 6A). Collector current: 15A. Pd (Power Dissipation, Max): 125W. RoHS: yes. Spec info: complementary transistor (pair) BDW83C. Assembly/installation: PCB through-hole mounting. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): SOT-93. Type of transistor: PNP. Collector/emitter voltage Vceo: 100V
BDW84C
Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 1 MHz. Function: hFE 750 (@3V, 6A). Collector current: 15A. Pd (Power Dissipation, Max): 125W. RoHS: yes. Spec info: complementary transistor (pair) BDW83C. Assembly/installation: PCB through-hole mounting. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): SOT-93. Type of transistor: PNP. Collector/emitter voltage Vceo: 100V
Set of 1
3.48$ VAT incl.
(3.48$ excl. VAT)
3.48$
Quantity in stock : 250
BDW84D

BDW84D

RoHS: yes. Component family: Darlington PNP Power Transistor. Housing: PCB soldering. Housing: SOT-9...
BDW84D
RoHS: yes. Component family: Darlington PNP Power Transistor. Housing: PCB soldering. Housing: SOT-93. Housing (JEDEC standard): SOT-93. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BDW84D. Collector-emitter voltage Uceo [V]: 120V. Collector current Ic [A], max.: 15A. Maximum dissipation Ptot [W]: 125W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C
BDW84D
RoHS: yes. Component family: Darlington PNP Power Transistor. Housing: PCB soldering. Housing: SOT-93. Housing (JEDEC standard): SOT-93. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BDW84D. Collector-emitter voltage Uceo [V]: 120V. Collector current Ic [A], max.: 15A. Maximum dissipation Ptot [W]: 125W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C
Set of 1
5.59$ VAT incl.
(5.59$ excl. VAT)
5.59$
Out of stock
BDW84D-ISC

BDW84D-ISC

Darlington transistor?: yes. Semiconductor material: silicon. FT: 1 MHz. Collector current: 15A. Pd ...
BDW84D-ISC
Darlington transistor?: yes. Semiconductor material: silicon. FT: 1 MHz. Collector current: 15A. Pd (Power Dissipation, Max): 125W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Type of transistor: PNP. Collector/emitter voltage Vceo: 120V. Number of terminals: 3. Function: hFE 750 (@3V, 6A). Quantity per case: 1. Spec info: complementary transistor (pair) BDW83D
BDW84D-ISC
Darlington transistor?: yes. Semiconductor material: silicon. FT: 1 MHz. Collector current: 15A. Pd (Power Dissipation, Max): 125W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Type of transistor: PNP. Collector/emitter voltage Vceo: 120V. Number of terminals: 3. Function: hFE 750 (@3V, 6A). Quantity per case: 1. Spec info: complementary transistor (pair) BDW83D
Set of 1
2.65$ VAT incl.
(2.65$ excl. VAT)
2.65$
Quantity in stock : 423
BDW93C

BDW93C

Collector current: 12A. Housing: TO-220. Manufacturer's marking: BDW93C. Collector-emitter voltage U...
BDW93C
Collector current: 12A. Housing: TO-220. Manufacturer's marking: BDW93C. Collector-emitter voltage Uceo [V]: 100V. Collector current Ic [A], max.: 12A. Cutoff frequency ft [MHz]: 20 MHz. Maximum dissipation Ptot [W]: 80W. Ic(pulse): 15A. Temperature: +150°C. Pd (Power Dissipation, Max): 80W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-220AB. Type of transistor: NPN. Vcbo: 100V. Saturation voltage VCE(sat): 2V. Maximum saturation voltage VCE(sat): 3V. Collector/emitter voltage Vceo: 100V. Type of transistor: Darlington Power Transistor. Polarity: NPN. Type: Darlington transistor. Collector-Emitter Voltage VCEO: 100V. Power: 80W. Number of terminals: 3. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C
BDW93C
Collector current: 12A. Housing: TO-220. Manufacturer's marking: BDW93C. Collector-emitter voltage Uceo [V]: 100V. Collector current Ic [A], max.: 12A. Cutoff frequency ft [MHz]: 20 MHz. Maximum dissipation Ptot [W]: 80W. Ic(pulse): 15A. Temperature: +150°C. Pd (Power Dissipation, Max): 80W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-220AB. Type of transistor: NPN. Vcbo: 100V. Saturation voltage VCE(sat): 2V. Maximum saturation voltage VCE(sat): 3V. Collector/emitter voltage Vceo: 100V. Type of transistor: Darlington Power Transistor. Polarity: NPN. Type: Darlington transistor. Collector-Emitter Voltage VCEO: 100V. Power: 80W. Number of terminals: 3. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C
Set of 1
1.20$ VAT incl.
(1.20$ excl. VAT)
1.20$
Quantity in stock : 60
BDW93CF

BDW93CF

Darlington transistor?: yes. Semiconductor material: silicon. FT: 20 MHz. Max hFE gain: 20000. Minim...
BDW93CF
Darlington transistor?: yes. Semiconductor material: silicon. FT: 20 MHz. Max hFE gain: 20000. Minimum hFE gain: 100. Collector current: 12A. Ic(pulse): 15A. Temperature: +150°C. Pd (Power Dissipation, Max): 33W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Type of transistor: NPN. Vcbo: 100V. Saturation voltage VCE(sat): 2V. Collector/emitter voltage Vceo: 100V. Quantity per case: 2. Number of terminals: 3. Function: complementary transistor (pair) BDW94CF. Spec info: R1 typ.=10k Ohms, R2 typ.=150 Ohms
BDW93CF
Darlington transistor?: yes. Semiconductor material: silicon. FT: 20 MHz. Max hFE gain: 20000. Minimum hFE gain: 100. Collector current: 12A. Ic(pulse): 15A. Temperature: +150°C. Pd (Power Dissipation, Max): 33W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Type of transistor: NPN. Vcbo: 100V. Saturation voltage VCE(sat): 2V. Collector/emitter voltage Vceo: 100V. Quantity per case: 2. Number of terminals: 3. Function: complementary transistor (pair) BDW94CF. Spec info: R1 typ.=10k Ohms, R2 typ.=150 Ohms
Set of 1
1.40$ VAT incl.
(1.40$ excl. VAT)
1.40$
Quantity in stock : 32
BDW93CFP

BDW93CFP

Type of transistor: Darlington Power Transistor. Polarity: NPN. Type: Darlington transistor. Collect...
BDW93CFP
Type of transistor: Darlington Power Transistor. Polarity: NPN. Type: Darlington transistor. Collector-Emitter Voltage VCEO: 100V. Collector current: 12A. Power: 33W. Housing: TO-220FP
BDW93CFP
Type of transistor: Darlington Power Transistor. Polarity: NPN. Type: Darlington transistor. Collector-Emitter Voltage VCEO: 100V. Collector current: 12A. Power: 33W. Housing: TO-220FP
Set of 1
1.04$ VAT incl.
(1.04$ excl. VAT)
1.04$
Out of stock
BDW93CTU

BDW93CTU

RoHS: yes. Component family: Darlington NPN Power Transistor. Housing: PCB soldering. Housing: TO-22...
BDW93CTU
RoHS: yes. Component family: Darlington NPN Power Transistor. Housing: PCB soldering. Housing: TO-220AB. Housing (JEDEC standard): TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BDW93C. Collector-emitter voltage Uceo [V]: 100V. Collector current Ic [A], max.: 12A. Maximum dissipation Ptot [W]: 80W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C
BDW93CTU
RoHS: yes. Component family: Darlington NPN Power Transistor. Housing: PCB soldering. Housing: TO-220AB. Housing (JEDEC standard): TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BDW93C. Collector-emitter voltage Uceo [V]: 100V. Collector current Ic [A], max.: 12A. Maximum dissipation Ptot [W]: 80W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C
Set of 1
1.08$ VAT incl.
(1.08$ excl. VAT)
1.08$
Quantity in stock : 531
BDW94C

BDW94C

RoHS: yes. Component family: PNP Darlington Transistor. Housing: PCB soldering. Housing: TO-220AB. H...
BDW94C
RoHS: yes. Component family: PNP Darlington Transistor. Housing: PCB soldering. Housing: TO-220AB. Housing (JEDEC standard): TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BDW94C. Collector-emitter voltage Uceo [V]: 100V. Collector current Ic [A], max.: 12A. Maximum dissipation Ptot [W]: 80W. Ic(pulse): 15A. Temperature: +150°C. Pd (Power Dissipation, Max): 80W. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AB. Type of transistor: PNP. Vcbo: 100V. Saturation voltage VCE(sat): 2V. Collector/emitter voltage Vceo: 100V. Number of terminals: 3. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Cutoff frequency ft [MHz]: complementary transistor (pair) BDW93C. Spec info: R1 typ.=10k Ohms, R2 typ.=150 Ohms
BDW94C
RoHS: yes. Component family: PNP Darlington Transistor. Housing: PCB soldering. Housing: TO-220AB. Housing (JEDEC standard): TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BDW94C. Collector-emitter voltage Uceo [V]: 100V. Collector current Ic [A], max.: 12A. Maximum dissipation Ptot [W]: 80W. Ic(pulse): 15A. Temperature: +150°C. Pd (Power Dissipation, Max): 80W. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AB. Type of transistor: PNP. Vcbo: 100V. Saturation voltage VCE(sat): 2V. Collector/emitter voltage Vceo: 100V. Number of terminals: 3. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Cutoff frequency ft [MHz]: complementary transistor (pair) BDW93C. Spec info: R1 typ.=10k Ohms, R2 typ.=150 Ohms
Set of 1
1.03$ VAT incl.
(1.03$ excl. VAT)
1.03$
Quantity in stock : 21
BDW94CF

BDW94CF

Darlington transistor?: yes. Semiconductor material: silicon. FT: 20 MHz. Max hFE gain: 20000. Minim...
BDW94CF
Darlington transistor?: yes. Semiconductor material: silicon. FT: 20 MHz. Max hFE gain: 20000. Minimum hFE gain: 100. Collector current: 12A. Ic(pulse): 15A. Temperature: +150°C. Pd (Power Dissipation, Max): 33W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Type of transistor: PNP. Vcbo: 100V. Saturation voltage VCE(sat): 2V. Collector/emitter voltage Vceo: 100V. Quantity per case: 2. Number of terminals: 3. Function: complementary transistor (pair) BDW93CF. Spec info: R1 typ.=10k Ohms, R2 typ.=150 Ohms
BDW94CF
Darlington transistor?: yes. Semiconductor material: silicon. FT: 20 MHz. Max hFE gain: 20000. Minimum hFE gain: 100. Collector current: 12A. Ic(pulse): 15A. Temperature: +150°C. Pd (Power Dissipation, Max): 33W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Type of transistor: PNP. Vcbo: 100V. Saturation voltage VCE(sat): 2V. Collector/emitter voltage Vceo: 100V. Quantity per case: 2. Number of terminals: 3. Function: complementary transistor (pair) BDW93CF. Spec info: R1 typ.=10k Ohms, R2 typ.=150 Ohms
Set of 1
1.40$ VAT incl.
(1.40$ excl. VAT)
1.40$
Quantity in stock : 267
BDX33C

BDX33C

Collector current: 10A. Housing: TO-220. Max hFE gain: 750. Minimum hFE gain: 100. Ic(pulse): 15A. T...
BDX33C
Collector current: 10A. Housing: TO-220. Max hFE gain: 750. Minimum hFE gain: 100. Ic(pulse): 15A. Temperature: +150°C. Pd (Power Dissipation, Max): 70W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-220AB. Type of transistor: NPN. Vcbo: 100V. Saturation voltage VCE(sat): 2.5V. Collector/emitter voltage Vceo: 100V. Vebo: 2.5V. Type of transistor: Darlington Power Transistor. Polarity: NPN. Type: Darlington transistor. Built-in diode: yes. Collector-Emitter Voltage VCEO: 100V. Power: 70W. Max frequency: 20MHz. DC Collector/Base Gain hFE min.: 750. Number of terminals: 3. Function: 10k Ohms (R1), 150 Ohms (R2). Spec info: complementary transistor (pair) BDX34C
BDX33C
Collector current: 10A. Housing: TO-220. Max hFE gain: 750. Minimum hFE gain: 100. Ic(pulse): 15A. Temperature: +150°C. Pd (Power Dissipation, Max): 70W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-220AB. Type of transistor: NPN. Vcbo: 100V. Saturation voltage VCE(sat): 2.5V. Collector/emitter voltage Vceo: 100V. Vebo: 2.5V. Type of transistor: Darlington Power Transistor. Polarity: NPN. Type: Darlington transistor. Built-in diode: yes. Collector-Emitter Voltage VCEO: 100V. Power: 70W. Max frequency: 20MHz. DC Collector/Base Gain hFE min.: 750. Number of terminals: 3. Function: 10k Ohms (R1), 150 Ohms (R2). Spec info: complementary transistor (pair) BDX34C
Set of 1
0.79$ VAT incl.
(0.79$ excl. VAT)
0.79$
Quantity in stock : 346
BDX34C

BDX34C

Resistor B: 10k Ohms. BE resistor: 150 Ohms. Darlington transistor?: yes. Quantity per case: 2. Semi...
BDX34C
Resistor B: 10k Ohms. BE resistor: 150 Ohms. Darlington transistor?: yes. Quantity per case: 2. Semiconductor material: silicon. FT: 20 MHz. Max hFE gain: 750. Minimum hFE gain: 100. Collector current: 10A. Ic(pulse): 15A. Temperature: +150°C. Pd (Power Dissipation, Max): 70W. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AB. Type of transistor: PNP. Vcbo: 100V. Saturation voltage VCE(sat): 2.5V. Collector/emitter voltage Vceo: 100V. C(in): yes. Cost): -100V. Number of terminals: 3. Function: 10k Ohms (R1), 150 Ohms (R2). Spec info: complementary transistor (pair) BDX33C. BE diode: no. CE diode: yes
BDX34C
Resistor B: 10k Ohms. BE resistor: 150 Ohms. Darlington transistor?: yes. Quantity per case: 2. Semiconductor material: silicon. FT: 20 MHz. Max hFE gain: 750. Minimum hFE gain: 100. Collector current: 10A. Ic(pulse): 15A. Temperature: +150°C. Pd (Power Dissipation, Max): 70W. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AB. Type of transistor: PNP. Vcbo: 100V. Saturation voltage VCE(sat): 2.5V. Collector/emitter voltage Vceo: 100V. C(in): yes. Cost): -100V. Number of terminals: 3. Function: 10k Ohms (R1), 150 Ohms (R2). Spec info: complementary transistor (pair) BDX33C. BE diode: no. CE diode: yes
Set of 1
0.78$ VAT incl.
(0.78$ excl. VAT)
0.78$
Quantity in stock : 152
BDX34CG

BDX34CG

RoHS: yes. Component family: Darlington PNP Power Transistor. Housing: PCB soldering. Housing: TO-22...
BDX34CG
RoHS: yes. Component family: Darlington PNP Power Transistor. Housing: PCB soldering. Housing: TO-220. Housing (JEDEC standard): TO-220. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BDX34CG. Collector-emitter voltage Uceo [V]: 100V. Collector current Ic [A], max.: 10A. Maximum dissipation Ptot [W]: 70W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C
BDX34CG
RoHS: yes. Component family: Darlington PNP Power Transistor. Housing: PCB soldering. Housing: TO-220. Housing (JEDEC standard): TO-220. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BDX34CG. Collector-emitter voltage Uceo [V]: 100V. Collector current Ic [A], max.: 10A. Maximum dissipation Ptot [W]: 70W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C
Set of 1
1.67$ VAT incl.
(1.67$ excl. VAT)
1.67$
Quantity in stock : 373
BDX53BFP

BDX53BFP

Type of transistor: Darlington Power Transistor. Polarity: NPN. Type: Darlington transistor. Collect...
BDX53BFP
Type of transistor: Darlington Power Transistor. Polarity: NPN. Type: Darlington transistor. Collector-Emitter Voltage VCEO: 80V. Collector current: 8A. Power: 20W. Max frequency: 20MHz. Housing: TO-220-F. DC Collector/Base Gain hFE min.: 750
BDX53BFP
Type of transistor: Darlington Power Transistor. Polarity: NPN. Type: Darlington transistor. Collector-Emitter Voltage VCEO: 80V. Collector current: 8A. Power: 20W. Max frequency: 20MHz. Housing: TO-220-F. DC Collector/Base Gain hFE min.: 750
Set of 1
0.52$ VAT incl.
(0.52$ excl. VAT)
0.52$
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