Transistors

Collector current: 8A. Housing: TO-220. Semiconductor material: silicon. FT: 20 MHz. Max hFE gain: +150°C. Minimum hFE gain: 750. Ic(pulse): 12A. Temperature: +150°C. Pd (Power Dissipation, Max): 60W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: Complementary power Darlington transistors. Housing (according to data sheet): TO-220AB. Type of transistor: NPN. Vcbo: 100V. Saturation voltage VCE(sat): 2V. Collector/emitter voltage Vceo: 100V. Vebo: 5V. Type of transistor: Darlington Power Transistor. Polarity: NPN. Type: Darlington transistor. Collector-Emitter Voltage VCEO: 100V. Power: 60W. Max frequency: 20MHz. DC Collector/Base Gain hFE min.: 750. Number of terminals: 3. Quantity per case: 1. Note: complementary transistor (pair) BDX54C. Function: audio amplifier. Spec info: R1 typ.=10k Ohms, R2 typ.=150 Ohms

Conditioning: plastic tube. Darlington transistor?: yes. Semiconductor material: silicon. FT: 20 MHz. Production date: 2014/32. Minimum hFE gain: 750. Collector current: 8A. Ic(pulse): 12A. Temperature: +150°C. Pd (Power Dissipation, Max): 60W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: Complementary power Darlington transistors. Housing: TO-220. Housing (according to data sheet): TO-220AB. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 100V. Maximum saturation voltage VCE(sat): 2V. Collector/emitter voltage Vceo: 50V. Vebo: 5V. Resistor B: Darlington Power Transistor. BE resistor: Darlington transistor. C(in): -100V. Cost): -8A. Number of terminals: 3. Quantity per case: 1. Note: complementary transistor (pair) BDX53C. Conditioning unit: 50. Function: audio amplifier. Spec info: R1 typ.=10k Ohms, R2 typ.=150 Ohms. BE diode: no. CE diode: yes

BE resistor: R1 typ. Darlington transistor?: yes. Semiconductor material: silicon. FT: 20 MHz. Function: Complementary power Darlington transistors. Minimum hFE gain: 750. Collector current: 8A. Ic(pulse): 12A. Pd (Power Dissipation, Max): 60W. Housing: TO-220. Type of transistor: PNP. Vcbo: 160V. Maximum saturation voltage VCE(sat): 2V. Collector/emitter voltage Vceo: 160V. Vebo: 5V. Quantity per case: 1. Spec info: complementary transistor (pair) BDX53F. BE diode: no. CE diode: yes

Darlington transistor?: yes. Semiconductor material: silicon. FT: 7 MHz. Collector current: 16A. Pd (Power Dissipation, Max): 150W. Assembly/installation: PCB through-hole mounting. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Type of transistor: PNP. Collector/emitter voltage Vceo: 120V. Function: hFE 1000. Quantity per case: 1. Spec info: complementary transistor (pair) BDX67C

Darlington transistor?: yes. Semiconductor material: silicon. FT: 7 MHz. Collector current: 16A. Pd (Power Dissipation, Max): 150W. Assembly/installation: PCB through-hole mounting. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Type of transistor: PNP. Collector/emitter voltage Vceo: 120V. Function: hFE 1000. Quantity per case: 1. Spec info: complementary transistor (pair) BDX67C

Semiconductor material: silicon. Function: switching-mode power supply. Collector current: 15A. Pd (Power Dissipation, Max): 95W. RoHS: no. Td(off): 3.5us. Td(on): 0.5us. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO3. Type of transistor: NPN. Operating temperature: -65...+175°C. Vcbo: 750V. Collector/emitter voltage Vceo: 350V. Quantity per case: 1

Semiconductor material: silicon. FT: 3 MHz. Collector current: 4A. Pd (Power Dissipation, Max): 36W. Type of transistor: PNP. Collector/emitter voltage Vceo: 50V. Quantity per case: 1

Quantity per case: 1

RoHS: no. Component family: NPN bipolar transistor. Housing: PCB soldering. Housing: TO-92. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 30 v. Collector current Ic [A], max.: 25mA. Maximum dissipation Ptot [W]: 0.25W

Cost): 3.5pF. Semiconductor material: silicon. FT: 1100 MHz. Function: TV-IF. Collector current: 100mA. Pd (Power Dissipation, Max): 350mW. Assembly/installation: PCB through-hole mounting. Technology: 'Planar Epitaxial transistor'. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: NPN. Operating temperature: -55°C to +150°C. Vcbo: 40V. Collector/emitter voltage Vceo: 25V. Vebo: 4 v. Resistor B: NPN transistor. BE resistor: RF-POWER. C(in): 25V. Quantity per case: 1. BE diode: no. CE diode: no

Function: TV-IF-reVHF. Quantity per case: 1

RoHS: yes. Housing: PCB soldering. Housing: TO-92. Housing (JEDEC standard): TO-226AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BF240. Collector-emitter voltage Uceo [V]: 40V. Collector current Ic [A], max.: 25mA. Cutoff frequency ft [MHz]: 150 MHz. Maximum dissipation Ptot [W]: 0.3W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: NPN transistor

Type of transistor: FET transistor. Channel type: N. Max drain current: 2mA. Max drain current: TO-92

C(in): 4pF. Cost): 1.6pF. Channel type: N. Type of transistor: JFET. Function: HF-VHF. ID (T=25°C): 25mA. Idss (max): 15mA. IDss (min): 6mA. IGF: 10mA. Pd (Power Dissipation, Max): 300mW. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: Field Effect Transistor. Housing: TO-92. Housing (according to data sheet): TO-92. Operating temperature: -...+150°C. Voltage Vds(max): 30 v. Gate/source voltage Vgs: 8V. Gate/source voltage (off) max.: 3.8V. Gate/source voltage (off) min.: 1.6V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : no. G-S Protection: no

C(in): 4pF. Cost): 1.6pF. Channel type: N. Type of transistor: JFET. Function: HF-VHF. ID (T=25°C): 25mA. Idss (max): 25mA. IDss (min): 12mA. IGF: 10mA. Temperature: +150°C. Pd (Power Dissipation, Max): 300mW. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: Field Effect Transistor. Housing: TO-92. Housing (according to data sheet): TO-92. Voltage Vds(max): 30 v. Gate/source voltage Vgs: 8V. Gate/source voltage (off) max.: 7.5V. Gate/source voltage (off) min.: 3.2V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : no. G-S Protection: no

RoHS: no. Housing: PCB soldering. Housing: TO-92. Housing (JEDEC standard): AM/FM/VHF. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BF246A. Drain-source voltage Uds [V]: 25V. Drain current Idss [A] @ Ug=0V: 10mA. Gate-source breakpoint voltage Ugss [V] @ Uds=0V: -14.5V @ +15V. Maximum dissipation Ptot [W]: 0.25W. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-92. Operating temperature: -55...+150°C. Voltage Vds(max): 39V. Gate/source voltage Vgs: 30 v. Gate/source voltage (off) max.: 14.5V. Gate/source voltage (off) min.: 0.6V. Component family: N-Channel JFET Transistor. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

RoHS: no. Component family: NPN bipolar transistor. Housing: PCB soldering. Housing: TO-92. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 20V. Collector current Ic [A], max.: 30mA. Maximum dissipation Ptot [W]: 0.22W

Channel type: N. Type of transistor: FET. Function: for VHF/UHF RF amplifiers. Idss (max): 13mA. IDss (min): 6mA. IGF: 10mA. Pd (Power Dissipation, Max): 350W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92. Operating temperature: -55...+150°C. Voltage Vds(max): 30 v. Gate/source voltage Vgs: 0.5V. Number of terminals: 3. Quantity per case: 1

Channel type: N. Type of transistor: FET. Function: for VHF/UHF RF amplifiers. Idss (max): 18mA. IDss (min): 11mA. IGF: 10mA. Pd (Power Dissipation, Max): 350mW. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92. Operating temperature: -55...+150°C. Voltage Vds(max): 30 v. Gate/source voltage Vgs: 0.5V. Number of terminals: 3. Quantity per case: 1

Semiconductor material: silicon. FT: 90 MHz. Function: VIDEO amp.. Collector current: 0.1A. Pd (Power Dissipation, Max): 0.8W. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: NPN. Vcbo: 300V. Collector/emitter voltage Vceo: 300V. Vebo: 5V. Number of terminals: 3. Quantity per case: 1

Quantity per case: 1

RoHS: no. Component family: NPN bipolar transistor. Housing: PCB soldering. Housing: TO-92. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 30 v. Collector current Ic [A], max.: 25mA. Maximum dissipation Ptot [W]: 0.3W

Semiconductor material: silicon. FT: 450 MHz. Collector current: 25mA. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: PNP. Collector/emitter voltage Vceo: 30 v. Quantity per case: 1

Cost): 2pF. Semiconductor material: silicon. FT: 50 MHz. Function: VIDEO amp.. Collector current: 0.5A. Pd (Power Dissipation, Max): 0.625W. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Type of transistor: NPN. Vcbo: 300V. Saturation voltage VCE(sat): 2V. Collector/emitter voltage Vceo: 300V. Vebo: 6V. Quantity per case: 1. BE diode: no. CE diode: no

Semiconductor material: silicon. FT: 60 MHz. Function: VIDEO amp.. Minimum hFE gain: 50. Collector current: 500mA. Temperature: +150°C. Pd (Power Dissipation, Max): 800mW. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused Planar Transistor'. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: NPN. Vcbo: 300V. Saturation voltage VCE(sat): 0.6V. Collector/emitter voltage Vceo: 300V. Vebo: 5V. Number of terminals: 3. Quantity per case: 1. Spec info: complementary transistor (pair) BF421. BE diode: no. CE diode: no