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Semiconductors Transistors

BD679A

BD679A
[TITLE]
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 0.72$ 0.72$
5 - 9 0.68$ 0.68$
10 - 24 0.65$ 0.65$
25 - 39 0.61$ 0.61$
Quantity U.P
1 - 4 0.72$ 0.72$
5 - 9 0.68$ 0.68$
10 - 24 0.65$ 0.65$
25 - 39 0.61$ 0.61$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 39
Set of 1

BD679A. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Minimum hFE gain: 750. Collector current: 4A. Ic(pulse): 6A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 40W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-126. Type of transistor: NPN. Operating temperature: -...+150°C. Vcbo: 80V. Saturation voltage VCE(sat): 2.8V. Collector/emitter voltage Vceo: 80V. BE resistor: R1 typ=15k Ohms, R2 typ=100 Ohms. Spec info: complementary transistor (pair) BD680A. Housing: TO-126 (TO-225, SOT-32). BE diode: no. CE diode: yes. Quantity in stock updated on 24/12/2024, 02:25.

Technical documentation

Equivalent products :

Quantity in stock : 1543
BD681

BD681

Collector current: 4A. Type of transistor: Darlington Power Transistor. Polarity: NPN. Type: Darling...
BD681
Collector current: 4A. Type of transistor: Darlington Power Transistor. Polarity: NPN. Type: Darlington transistor. Built-in diode: yes. Collector-Emitter Voltage VCEO: 100V. Power: 40W. Housing: TO-126. Semiconductor material: silicon. FT: 10 MHz. Max hFE gain: 750. Ic(pulse): 6A. Pd (Power Dissipation, Max): 40W. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-126. Type of transistor: NPN. Vcbo: 100V. Maximum saturation voltage VCE(sat): 2.5V. Collector/emitter voltage Vceo: 100V. Vebo: 5V. Spec info: complementary transistor (pair) BD682. Housing: TO-126 (TO-225, SOT-32)
BD681
Collector current: 4A. Type of transistor: Darlington Power Transistor. Polarity: NPN. Type: Darlington transistor. Built-in diode: yes. Collector-Emitter Voltage VCEO: 100V. Power: 40W. Housing: TO-126. Semiconductor material: silicon. FT: 10 MHz. Max hFE gain: 750. Ic(pulse): 6A. Pd (Power Dissipation, Max): 40W. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-126. Type of transistor: NPN. Vcbo: 100V. Maximum saturation voltage VCE(sat): 2.5V. Collector/emitter voltage Vceo: 100V. Vebo: 5V. Spec info: complementary transistor (pair) BD682. Housing: TO-126 (TO-225, SOT-32)
Set of 1
0.55$ VAT incl.
(0.55$ excl. VAT)
0.55$

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