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Semiconductors Transistors

BD680-DIV

BD680-DIV
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 0.46$ 0.46$
Quantity U.P
1 - 4 0.46$ 0.46$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 4
Set of 1

BD680-DIV. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Collector current: 4A. Pd (Power Dissipation, Max): 40W. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-126. Type of transistor: PNP. Collector/emitter voltage Vceo: 80V. Housing: TO-126 (TO-225, SOT-32). Quantity in stock updated on 10/01/2025, 20:25.

Equivalent products :

Quantity in stock : 1343
BD682

BD682

Housing: TO-126. Collector-emitter voltage Uceo [V]: 100V. Collector current Ic [A], max.: 4A. Cutof...
BD682
Housing: TO-126. Collector-emitter voltage Uceo [V]: 100V. Collector current Ic [A], max.: 4A. Cutoff frequency ft [MHz]: NF-L. Maximum dissipation Ptot [W]: 40W. Pd (Power Dissipation, Max): 40W. Type of transistor: PNP. Collector/emitter voltage Vceo: 100V. Type of transistor: Darlington Power Transistor. Polarity: PNP. Type: Darlington transistor. Built-in diode: yes. Collector-Emitter Voltage VCEO: -100V. Collector current: -4A. Power: 40W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Spec info: complementary transistor (pair) BD681
BD682
Housing: TO-126. Collector-emitter voltage Uceo [V]: 100V. Collector current Ic [A], max.: 4A. Cutoff frequency ft [MHz]: NF-L. Maximum dissipation Ptot [W]: 40W. Pd (Power Dissipation, Max): 40W. Type of transistor: PNP. Collector/emitter voltage Vceo: 100V. Type of transistor: Darlington Power Transistor. Polarity: PNP. Type: Darlington transistor. Built-in diode: yes. Collector-Emitter Voltage VCEO: -100V. Collector current: -4A. Power: 40W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Spec info: complementary transistor (pair) BD681
Set of 1
0.61$ VAT incl.
(0.61$ excl. VAT)
0.61$
Quantity in stock : 377
BD680

BD680

RoHS: yes. Resistor B: yes. C(in): TO-126. Cost): SOT-32. Darlington transistor?: yes. Quantity per ...
BD680
RoHS: yes. Resistor B: yes. C(in): TO-126. Cost): SOT-32. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Function: hFE 750. Collector current: 4A. Number of terminals: 3. Pd (Power Dissipation, Max): 40W. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-126. Type of transistor: PNP. Collector/emitter voltage Vceo: 80V. BE resistor: R1 typ=15k Ohms, R2 typ=100 Ohms. Spec info: complementary transistor (pair) BD679. Housing: TO-126 (TO-225, SOT-32). BE diode: no. CE diode: yes
BD680
RoHS: yes. Resistor B: yes. C(in): TO-126. Cost): SOT-32. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Function: hFE 750. Collector current: 4A. Number of terminals: 3. Pd (Power Dissipation, Max): 40W. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-126. Type of transistor: PNP. Collector/emitter voltage Vceo: 80V. BE resistor: R1 typ=15k Ohms, R2 typ=100 Ohms. Spec info: complementary transistor (pair) BD679. Housing: TO-126 (TO-225, SOT-32). BE diode: no. CE diode: yes
Set of 1
0.52$ VAT incl.
(0.52$ excl. VAT)
0.52$
Quantity in stock : 93
BD684

BD684

Darlington transistor?: yes. Semiconductor material: silicon. FT: 10 MHz. Function: NF-L. Collector ...
BD684
Darlington transistor?: yes. Semiconductor material: silicon. FT: 10 MHz. Function: NF-L. Collector current: 4A. Pd (Power Dissipation, Max): 40W. Type of transistor: PNP. Collector/emitter voltage Vceo: 120V. Note: >750. Quantity per case: 1
BD684
Darlington transistor?: yes. Semiconductor material: silicon. FT: 10 MHz. Function: NF-L. Collector current: 4A. Pd (Power Dissipation, Max): 40W. Type of transistor: PNP. Collector/emitter voltage Vceo: 120V. Note: >750. Quantity per case: 1
Set of 1
0.92$ VAT incl.
(0.92$ excl. VAT)
0.92$

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TCST2103

CTR: 10 - 20 %. Diode IF: 60mA. Courant IF Diode (peak): 3A. Diode Power: 0.1W. Diode threshold volt...
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2N5551

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RoHS: yes. Housing: TO-92. Resistor B: yes. BE resistor: PCB soldering. C(in): TO-92. Cost): 6pF. Qu...
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2N2222A-PL

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C(in): 30pF. Cost): 8pF. Quantity per case: 1. Semiconductor material: silicon. FT: 250 MHz. Functio...
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PC16SH-10IP06-254A2020

PC16SH-10IP06-254A2020

Resistance: 250k Ohms. Number of channels: 1. Resistor type: carbon layer. Number of turns: 1. Tempe...
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FUSE-0-500A20T

FUSE-0-500A20T

Max Continuous current: 500mA. Fuse type: Glass (Cylindrical). Fuse properties: time delay fuse (T...
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2N6027

2N6027

Quantity per case: 1. Semiconductor material: silicon. Function: PUT.. Number of terminals: 3. Pd (P...
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FJP13009H2

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Cost): 180pF. Semiconductor material: silicon. FT: 4 MHz. Function: High voltage fast switching. Max...
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SW2001-2S

SW2001-2S

Panel cutout/drilling: 6.3mm + 2.5mm. Switch mode: 1SPDT (ON-ON). Configuration: ON-ON. Switch curre...
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STPS20H100CT

STPS20H100CT

Conditioning: plastic tube. Quantity per case: 2. Dielectric structure: common cathode. Semiconducto...
STPS20H100CT
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