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Semiconductors Transistors PNP bipolar transistors

NPN-Transistor, 4A, TO-126, 80V, TO-126 (TO-225, SOT-32) - BD680-DIV

NPN-Transistor, 4A, TO-126, 80V, TO-126 (TO-225, SOT-32) - BD680-DIV
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 0.46$ 0.46$
Quantity U.P
1 - 4 0.46$ 0.46$
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Quantity in stock : 4
Set of 1

NPN-Transistor, 4A, TO-126, 80V, TO-126 (TO-225, SOT-32) - BD680-DIV. NPN-Transistor, 4A, TO-126, 80V, TO-126 (TO-225, SOT-32). Collector current: 4A. Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 80V. Housing: TO-126 (TO-225, SOT-32). Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Pd (Power Dissipation, Max): 40W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Quantity in stock updated on 19/04/2025, 23:25.

Equivalent products :

Quantity in stock : 1298
BD682

BD682

NPN-Transistor, TO-126, 100V, 4A, 100V, -100V, -4A. Housing: TO-126. Collector-emitter voltage Uceo ...
BD682
NPN-Transistor, TO-126, 100V, 4A, 100V, -100V, -4A. Housing: TO-126. Collector-emitter voltage Uceo [V]: 100V. Collector current Ic [A], max.: 4A. Collector/emitter voltage Vceo: 100V. Collector-Emitter Voltage VCEO: -100V. Collector current: -4A. Cutoff frequency ft [MHz]: NF-L. Maximum dissipation Ptot [W]: 40W. Pd (Power Dissipation, Max): 40W. Type of transistor: PNP. Type of transistor: Darlington Power Transistor. Polarity: PNP. Type: Darlington transistor. Built-in diode: yes. Power: 40W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Spec info: complementary transistor (pair) BD681
BD682
NPN-Transistor, TO-126, 100V, 4A, 100V, -100V, -4A. Housing: TO-126. Collector-emitter voltage Uceo [V]: 100V. Collector current Ic [A], max.: 4A. Collector/emitter voltage Vceo: 100V. Collector-Emitter Voltage VCEO: -100V. Collector current: -4A. Cutoff frequency ft [MHz]: NF-L. Maximum dissipation Ptot [W]: 40W. Pd (Power Dissipation, Max): 40W. Type of transistor: PNP. Type of transistor: Darlington Power Transistor. Polarity: PNP. Type: Darlington transistor. Built-in diode: yes. Power: 40W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Spec info: complementary transistor (pair) BD681
Set of 1
0.61$ VAT incl.
(0.61$ excl. VAT)
0.61$
Quantity in stock : 377
BD680

BD680

NPN-Transistor, 4A, TO-126, 80V, TO-126 (TO-225, SOT-32). Collector current: 4A. Housing (according ...
BD680
NPN-Transistor, 4A, TO-126, 80V, TO-126 (TO-225, SOT-32). Collector current: 4A. Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 80V. Housing: TO-126 (TO-225, SOT-32). RoHS: yes. Resistor B: yes. C(in): TO-126. Cost): SOT-32. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Function: hFE 750. Number of terminals: 3. Pd (Power Dissipation, Max): 40W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. BE resistor: R1 typ=15k Ohms, R2 typ=100 Ohms. Spec info: complementary transistor (pair) BD679. BE diode: no. CE diode: yes
BD680
NPN-Transistor, 4A, TO-126, 80V, TO-126 (TO-225, SOT-32). Collector current: 4A. Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 80V. Housing: TO-126 (TO-225, SOT-32). RoHS: yes. Resistor B: yes. C(in): TO-126. Cost): SOT-32. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Function: hFE 750. Number of terminals: 3. Pd (Power Dissipation, Max): 40W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. BE resistor: R1 typ=15k Ohms, R2 typ=100 Ohms. Spec info: complementary transistor (pair) BD679. BE diode: no. CE diode: yes
Set of 1
0.52$ VAT incl.
(0.52$ excl. VAT)
0.52$
Quantity in stock : 93
BD684

BD684

NPN-Transistor, 4A, 120V. Collector current: 4A. Collector/emitter voltage Vceo: 120V. Darlington tr...
BD684
NPN-Transistor, 4A, 120V. Collector current: 4A. Collector/emitter voltage Vceo: 120V. Darlington transistor?: yes. Semiconductor material: silicon. FT: 10 MHz. Function: NF-L. Pd (Power Dissipation, Max): 40W. Type of transistor: PNP. Note: >750. Quantity per case: 1
BD684
NPN-Transistor, 4A, 120V. Collector current: 4A. Collector/emitter voltage Vceo: 120V. Darlington transistor?: yes. Semiconductor material: silicon. FT: 10 MHz. Function: NF-L. Pd (Power Dissipation, Max): 40W. Type of transistor: PNP. Note: >750. Quantity per case: 1
Set of 1
0.92$ VAT incl.
(0.92$ excl. VAT)
0.92$

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