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Semiconductors Transistors

BD912-ST

BD912-ST
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 1.35$ 1.35$
5 - 9 1.28$ 1.28$
10 - 24 1.21$ 1.21$
25 - 49 1.15$ 1.15$
50 - 83 1.12$ 1.12$
Quantity U.P
1 - 4 1.35$ 1.35$
5 - 9 1.28$ 1.28$
10 - 24 1.21$ 1.21$
25 - 49 1.15$ 1.15$
50 - 83 1.12$ 1.12$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 83
Set of 1

BD912-ST. Semiconductor material: silicon. FT: 3 MHz. Function: NF/L. Collector current: 15A. Pd (Power Dissipation, Max): 90W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-225. Type of transistor: PNP. Collector/emitter voltage Vceo: 100V. Number of terminals: 3. Quantity per case: 1. Spec info: complementary transistor (pair) BD911. Housing: TO-126 (TO-225, SOT-32). Quantity in stock updated on 09/04/2025, 01:25.

Equivalent products :

Quantity in stock : 387
BD912

BD912

Resistor B: yes. BE resistor: PCB soldering. C(in): TO-220AB. Cost): TO-220AB. Semiconductor materia...
BD912
Resistor B: yes. BE resistor: PCB soldering. C(in): TO-220AB. Cost): TO-220AB. Semiconductor material: silicon. FT: 3 MHz. Function: Power Linear and Switching. Max hFE gain: 250. Minimum hFE gain: 40. Collector current: 15A. Ic(pulse): +150°C. Temperature: +150°C. Pd (Power Dissipation, Max): 90W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: PNP. Vcbo: 100V. Saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 100V. Vebo: 5V. Number of terminals: 3. Quantity per case: 1. Spec info: complementary transistor (pair) BD911. BE diode: no. CE diode: no
BD912
Resistor B: yes. BE resistor: PCB soldering. C(in): TO-220AB. Cost): TO-220AB. Semiconductor material: silicon. FT: 3 MHz. Function: Power Linear and Switching. Max hFE gain: 250. Minimum hFE gain: 40. Collector current: 15A. Ic(pulse): +150°C. Temperature: +150°C. Pd (Power Dissipation, Max): 90W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: PNP. Vcbo: 100V. Saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 100V. Vebo: 5V. Number of terminals: 3. Quantity per case: 1. Spec info: complementary transistor (pair) BD911. BE diode: no. CE diode: no
Set of 1
1.05$ VAT incl.
(1.05$ excl. VAT)
1.05$

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BD911

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Semiconductor material: silicon. FT: 3 MHz. Function: Power Linear and Switching. Max hFE gain: 250....
BD911
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2N5551

2N5551

RoHS: yes. Housing: TO-92. Resistor B: yes. BE resistor: PCB soldering. C(in): TO-92. Cost): 6pF. Qu...
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PC16SH-10IP06-254A2020

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Resistance: 250k Ohms. Number of channels: 1. Resistor type: carbon layer. Number of turns: 1. Tempe...
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2N2222AG

2N2222AG

Conditioning unit: 5000. Quantity per case: 1. Semiconductor material: silicon. FT: 300 MHz. Functio...
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FUSE-0-500A20T

FUSE-0-500A20T

Max Continuous current: 500mA. Fuse type: Glass (Cylindrical). Fuse properties: time delay fuse (T...
FUSE-0-500A20T
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2SC1815

2SC1815

Conditioning: roll. Quantity per case: 1. Semiconductor material: silicon. FT: 80 MHz. Max hFE gain:...
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FJP13009H2

FJP13009H2

Cost): 180pF. Semiconductor material: silicon. FT: 4 MHz. Function: High voltage fast switching. Max...
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SW2001-2S

SW2001-2S

Panel cutout/drilling: 6.3mm + 2.5mm. Switch mode: 1SPDT (ON-ON). Configuration: ON-ON. Switch curre...
SW2001-2S
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STPS20H100CT

STPS20H100CT

Conditioning: plastic tube. Quantity per case: 2. Dielectric structure: common cathode. Semiconducto...
STPS20H100CT
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