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Semiconductors
Transistors

Transistors

3183 products available
Products per page :
1...434445 4647...128
Quantity in stock : 107
BD238

BD238

RoHS: yes. Resistor B: yes. BE resistor: PCB soldering. C(in): TO-126. Cost): SOT-32. Conditioning: ...
BD238
RoHS: yes. Resistor B: yes. BE resistor: PCB soldering. C(in): TO-126. Cost): SOT-32. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: Audio, power linear and switching applications. Max hFE gain: 40. Minimum hFE gain: 25. Collector current: 2A. Ic(pulse): 6A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 25W. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-126. Type of transistor: PNP. Vcbo: 100V. Saturation voltage VCE(sat): 0.6V. Collector/emitter voltage Vceo: 80V. Vebo: 5V. Spec info: complementary transistor (pair) BD237. Housing: TO-126 (TO-225, SOT-32). BE diode: no. CE diode: no
BD238
RoHS: yes. Resistor B: yes. BE resistor: PCB soldering. C(in): TO-126. Cost): SOT-32. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: Audio, power linear and switching applications. Max hFE gain: 40. Minimum hFE gain: 25. Collector current: 2A. Ic(pulse): 6A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 25W. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-126. Type of transistor: PNP. Vcbo: 100V. Saturation voltage VCE(sat): 0.6V. Collector/emitter voltage Vceo: 80V. Vebo: 5V. Spec info: complementary transistor (pair) BD237. Housing: TO-126 (TO-225, SOT-32). BE diode: no. CE diode: no
Set of 1
0.52$ VAT incl.
(0.52$ excl. VAT)
0.52$
Quantity in stock : 208
BD238G

BD238G

RoHS: yes. Housing: PCB soldering. Housing: TO-225. Housing (JEDEC standard): TO-225. Configuration:...
BD238G
RoHS: yes. Housing: PCB soldering. Housing: TO-225. Housing (JEDEC standard): TO-225. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BD238G. Collector-emitter voltage Uceo [V]: 80V. Collector current Ic [A], max.: 2A. Cutoff frequency ft [MHz]: 3 MHz. Maximum dissipation Ptot [W]: 25W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: PNP power transistor
BD238G
RoHS: yes. Housing: PCB soldering. Housing: TO-225. Housing (JEDEC standard): TO-225. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BD238G. Collector-emitter voltage Uceo [V]: 80V. Collector current Ic [A], max.: 2A. Cutoff frequency ft [MHz]: 3 MHz. Maximum dissipation Ptot [W]: 25W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: PNP power transistor
Set of 1
0.56$ VAT incl.
(0.56$ excl. VAT)
0.56$
Quantity in stock : 1093
BD238STU

BD238STU

Type of transistor: Power Transistor. Polarity: PNP. Collector-Emitter Voltage VCEO: -80V. Collector...
BD238STU
Type of transistor: Power Transistor. Polarity: PNP. Collector-Emitter Voltage VCEO: -80V. Collector current: -2A. Power: 25W. Max frequency: 3MHz. Housing: TO-126
BD238STU
Type of transistor: Power Transistor. Polarity: PNP. Collector-Emitter Voltage VCEO: -80V. Collector current: -2A. Power: 25W. Max frequency: 3MHz. Housing: TO-126
Set of 1
0.49$ VAT incl.
(0.49$ excl. VAT)
0.49$
Quantity in stock : 1070
BD239C

BD239C

Collector current: 2A. Housing: TO-220. Type of transistor: NPN power transistor. Polarity: NPN. Col...
BD239C
Collector current: 2A. Housing: TO-220. Type of transistor: NPN power transistor. Polarity: NPN. Collector-Emitter Voltage VCEO: 100V. Power: 30W. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Max hFE gain: 40. Minimum hFE gain: 15. Ic(pulse): 4A. Pd (Power Dissipation, Max): 30W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-220. Type of transistor: NPN. Operating temperature: -...+150°C. Vcbo: 100V. Maximum saturation voltage VCE(sat): 0.7V. Collector/emitter voltage Vceo: 115V. Vebo: 5V. Spec info: complementary transistor (pair) BD240C
BD239C
Collector current: 2A. Housing: TO-220. Type of transistor: NPN power transistor. Polarity: NPN. Collector-Emitter Voltage VCEO: 100V. Power: 30W. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Max hFE gain: 40. Minimum hFE gain: 15. Ic(pulse): 4A. Pd (Power Dissipation, Max): 30W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-220. Type of transistor: NPN. Operating temperature: -...+150°C. Vcbo: 100V. Maximum saturation voltage VCE(sat): 0.7V. Collector/emitter voltage Vceo: 115V. Vebo: 5V. Spec info: complementary transistor (pair) BD240C
Set of 1
0.66$ VAT incl.
(0.66$ excl. VAT)
0.66$
Quantity in stock : 66
BD240C

BD240C

Quantity per case: 1. Semiconductor material: silicon. FT: 3MHz. Function: NF-L. Max hFE gain: 40. M...
BD240C
Quantity per case: 1. Semiconductor material: silicon. FT: 3MHz. Function: NF-L. Max hFE gain: 40. Minimum hFE gain: 15. Collector current: 2A. Ic(pulse): 4A. Temperature: +150°C. Pd (Power Dissipation, Max): 30W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: PNP. Vcbo: 100V. Maximum saturation voltage VCE(sat): 0.7V. Collector/emitter voltage Vceo: 115V. Vebo: 5V. Spec info: complementary transistor (pair) BD239C. BE diode: no. CE diode: no
BD240C
Quantity per case: 1. Semiconductor material: silicon. FT: 3MHz. Function: NF-L. Max hFE gain: 40. Minimum hFE gain: 15. Collector current: 2A. Ic(pulse): 4A. Temperature: +150°C. Pd (Power Dissipation, Max): 30W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: PNP. Vcbo: 100V. Maximum saturation voltage VCE(sat): 0.7V. Collector/emitter voltage Vceo: 115V. Vebo: 5V. Spec info: complementary transistor (pair) BD239C. BE diode: no. CE diode: no
Set of 1
0.74$ VAT incl.
(0.74$ excl. VAT)
0.74$
Quantity in stock : 1876476
BD241C

BD241C

Housing: TO-220. Type of transistor: NPN power transistor. Polarity: NPN. Collector-Emitter Voltage ...
BD241C
Housing: TO-220. Type of transistor: NPN power transistor. Polarity: NPN. Collector-Emitter Voltage VCEO: 100V. Collector current: 3A. Power: 40W. Max frequency: 3MHz. Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Max hFE gain: 25. Minimum hFE gain: 10. Collector current: 5A. Ic(pulse): 8A. Number of terminals: 3. Pd (Power Dissipation, Max): 40W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-220. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 115V. Maximum saturation voltage VCE(sat): 1.2V. Collector/emitter voltage Vceo: 100V. Vebo: 5V. Spec info: complementary transistor (pair) BD242C
BD241C
Housing: TO-220. Type of transistor: NPN power transistor. Polarity: NPN. Collector-Emitter Voltage VCEO: 100V. Collector current: 3A. Power: 40W. Max frequency: 3MHz. Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Max hFE gain: 25. Minimum hFE gain: 10. Collector current: 5A. Ic(pulse): 8A. Number of terminals: 3. Pd (Power Dissipation, Max): 40W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-220. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 115V. Maximum saturation voltage VCE(sat): 1.2V. Collector/emitter voltage Vceo: 100V. Vebo: 5V. Spec info: complementary transistor (pair) BD242C
Set of 1
0.60$ VAT incl.
(0.60$ excl. VAT)
0.60$
Quantity in stock : 267
BD241C-ST

BD241C-ST

Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Max hFE gain: 25. ...
BD241C-ST
Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Max hFE gain: 25. Minimum hFE gain: 10. Collector current: 3A. Ic(pulse): 5A. Number of terminals: 3. Pd (Power Dissipation, Max): 40W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 115V. Maximum saturation voltage VCE(sat): 1.2V. Collector/emitter voltage Vceo: 100V. Vebo: 5V. Spec info: complementary transistor (pair) BD242C. BE diode: no. CE diode: no
BD241C-ST
Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Max hFE gain: 25. Minimum hFE gain: 10. Collector current: 3A. Ic(pulse): 5A. Number of terminals: 3. Pd (Power Dissipation, Max): 40W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 115V. Maximum saturation voltage VCE(sat): 1.2V. Collector/emitter voltage Vceo: 100V. Vebo: 5V. Spec info: complementary transistor (pair) BD242C. BE diode: no. CE diode: no
Set of 1
0.67$ VAT incl.
(0.67$ excl. VAT)
0.67$
Quantity in stock : 63
BD242C

BD242C

Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Max hFE gain: 25. ...
BD242C
Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Max hFE gain: 25. Minimum hFE gain: 10. Collector current: 5A. Ic(pulse): 8A. Number of terminals: 3. Pd (Power Dissipation, Max): 40W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 115V. Maximum saturation voltage VCE(sat): 1.2V. Collector/emitter voltage Vceo: 100V. Vebo: 5V. Spec info: complementary transistor (pair) BD241C. BE diode: no. CE diode: no
BD242C
Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Max hFE gain: 25. Minimum hFE gain: 10. Collector current: 5A. Ic(pulse): 8A. Number of terminals: 3. Pd (Power Dissipation, Max): 40W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 115V. Maximum saturation voltage VCE(sat): 1.2V. Collector/emitter voltage Vceo: 100V. Vebo: 5V. Spec info: complementary transistor (pair) BD241C. BE diode: no. CE diode: no
Set of 1
1.04$ VAT incl.
(1.04$ excl. VAT)
1.04$
Quantity in stock : 865
BD242CG

BD242CG

RoHS: yes. Housing: PCB soldering. Housing: TO-220AB. Housing (JEDEC standard): TO-220AB. Configurat...
BD242CG
RoHS: yes. Housing: PCB soldering. Housing: TO-220AB. Housing (JEDEC standard): TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BD242CG. Collector-emitter voltage Uceo [V]: 100V. Collector current Ic [A], max.: 3A. Maximum dissipation Ptot [W]: 40W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: PNP power transistor
BD242CG
RoHS: yes. Housing: PCB soldering. Housing: TO-220AB. Housing (JEDEC standard): TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BD242CG. Collector-emitter voltage Uceo [V]: 100V. Collector current Ic [A], max.: 3A. Maximum dissipation Ptot [W]: 40W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: PNP power transistor
Set of 1
1.39$ VAT incl.
(1.39$ excl. VAT)
1.39$
Quantity in stock : 1877634
BD243C

BD243C

Number of terminals: 3. Manufacturer's marking: BD243C. Collector-emitter voltage Uceo [V]: 100V. Co...
BD243C
Number of terminals: 3. Manufacturer's marking: BD243C. Collector-emitter voltage Uceo [V]: 100V. Collector current Ic [A], max.: 6A. Maximum dissipation Ptot [W]: 65W. Type of transistor: NPN power transistor. Polarity: NPN. Collector-Emitter Voltage VCEO: 100V. Collector current: 6A. Power: 65W. Housing: TO-220. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C
BD243C
Number of terminals: 3. Manufacturer's marking: BD243C. Collector-emitter voltage Uceo [V]: 100V. Collector current Ic [A], max.: 6A. Maximum dissipation Ptot [W]: 65W. Type of transistor: NPN power transistor. Polarity: NPN. Collector-Emitter Voltage VCEO: 100V. Collector current: 6A. Power: 65W. Housing: TO-220. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C
Set of 1
0.65$ VAT incl.
(0.65$ excl. VAT)
0.65$
Quantity in stock : 154
BD243C-CDIL

BD243C-CDIL

Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 1. Semiconductor material: sil...
BD243C-CDIL
Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: Complementary power transistor. Max hFE gain: 30. Minimum hFE gain: 15. Collector current: 6A. Ic(pulse): 10A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 65W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: NPN. Vcbo: 100V. Saturation voltage VCE(sat): 1.5V. Collector/emitter voltage Vceo: 100V. Spec info: complementary transistor (pair) BD244C. BE diode: no. CE diode: no
BD243C-CDIL
Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: Complementary power transistor. Max hFE gain: 30. Minimum hFE gain: 15. Collector current: 6A. Ic(pulse): 10A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 65W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: NPN. Vcbo: 100V. Saturation voltage VCE(sat): 1.5V. Collector/emitter voltage Vceo: 100V. Spec info: complementary transistor (pair) BD244C. BE diode: no. CE diode: no
Set of 1
0.91$ VAT incl.
(0.91$ excl. VAT)
0.91$
Quantity in stock : 321
BD243C-FAI

BD243C-FAI

RoHS: yes. Housing: PCB soldering. Housing: TO-220AB. Housing (JEDEC standard): TO-220AB. Configurat...
BD243C-FAI
RoHS: yes. Housing: PCB soldering. Housing: TO-220AB. Housing (JEDEC standard): TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BD243C. Collector-emitter voltage Uceo [V]: 100V. Collector current Ic [A], max.: 6A. Maximum dissipation Ptot [W]: 65W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: NPN power transistor
BD243C-FAI
RoHS: yes. Housing: PCB soldering. Housing: TO-220AB. Housing (JEDEC standard): TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BD243C. Collector-emitter voltage Uceo [V]: 100V. Collector current Ic [A], max.: 6A. Maximum dissipation Ptot [W]: 65W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: NPN power transistor
Set of 1
1.96$ VAT incl.
(1.96$ excl. VAT)
1.96$
Quantity in stock : 80
BD243C-STM

BD243C-STM

Conditioning: plastic tube. Conditioning unit: 50. Darlington transistor?: no. Quantity per case: 1....
BD243C-STM
Conditioning: plastic tube. Conditioning unit: 50. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: Complementary power transistor. Max hFE gain: 30. Minimum hFE gain: 15. Collector current: 6A. Ic(pulse): 10A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 65W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: NPN. Vcbo: 100V. Saturation voltage VCE(sat): 1.5V. Collector/emitter voltage Vceo: 100V. Spec info: complementary transistor (pair) BD244C. BE diode: no. CE diode: no
BD243C-STM
Conditioning: plastic tube. Conditioning unit: 50. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: Complementary power transistor. Max hFE gain: 30. Minimum hFE gain: 15. Collector current: 6A. Ic(pulse): 10A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 65W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: NPN. Vcbo: 100V. Saturation voltage VCE(sat): 1.5V. Collector/emitter voltage Vceo: 100V. Spec info: complementary transistor (pair) BD244C. BE diode: no. CE diode: no
Set of 1
2.02$ VAT incl.
(2.02$ excl. VAT)
2.02$
Quantity in stock : 271
BD243CG

BD243CG

Collector current: 6A. Housing: TO-220. Type of transistor: NPN power transistor. Polarity: NPN. Col...
BD243CG
Collector current: 6A. Housing: TO-220. Type of transistor: NPN power transistor. Polarity: NPN. Collector-Emitter Voltage VCEO: 100V. Power: 65W. Max frequency: 3MHz. Conditioning unit: 50. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Ic(pulse): 10A. Number of terminals: 3. Pd (Power Dissipation, Max): 65W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-220AB. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 100V. Collector/emitter voltage Vceo: 100V
BD243CG
Collector current: 6A. Housing: TO-220. Type of transistor: NPN power transistor. Polarity: NPN. Collector-Emitter Voltage VCEO: 100V. Power: 65W. Max frequency: 3MHz. Conditioning unit: 50. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Ic(pulse): 10A. Number of terminals: 3. Pd (Power Dissipation, Max): 65W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-220AB. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 100V. Collector/emitter voltage Vceo: 100V
Set of 1
1.59$ VAT incl.
(1.59$ excl. VAT)
1.59$
Quantity in stock : 1877299
BD244C

BD244C

RoHS: yes. Housing: PCB soldering. Housing: TO-220AB. Housing (JEDEC standard): TO-220AB. Configurat...
BD244C
RoHS: yes. Housing: PCB soldering. Housing: TO-220AB. Housing (JEDEC standard): TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BD244C. Collector-emitter voltage Uceo [V]: 100V. Collector current Ic [A], max.: 6A. Maximum dissipation Ptot [W]: 65W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: PNP power transistor. Cutoff frequency ft [MHz]: 15. Pd (Power Dissipation, Max): 65W. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 100V. Saturation voltage VCE(sat): 1.5V. Collector/emitter voltage Vceo: 100V. Vebo: 5V. Spec info: complementary transistor (pair) BD243C
BD244C
RoHS: yes. Housing: PCB soldering. Housing: TO-220AB. Housing (JEDEC standard): TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BD244C. Collector-emitter voltage Uceo [V]: 100V. Collector current Ic [A], max.: 6A. Maximum dissipation Ptot [W]: 65W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: PNP power transistor. Cutoff frequency ft [MHz]: 15. Pd (Power Dissipation, Max): 65W. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 100V. Saturation voltage VCE(sat): 1.5V. Collector/emitter voltage Vceo: 100V. Vebo: 5V. Spec info: complementary transistor (pair) BD243C
Set of 1
0.69$ VAT incl.
(0.69$ excl. VAT)
0.69$
Quantity in stock : 257
BD244CG

BD244CG

Housing: TO-220. Resistor B: Power Transistor. BE resistor: -100V. C(in): -6A. Cost): 65W. Quantity ...
BD244CG
Housing: TO-220. Resistor B: Power Transistor. BE resistor: -100V. C(in): -6A. Cost): 65W. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Max hFE gain: 30. Minimum hFE gain: 15. Collector current: 6A. Ic(pulse): 10A. Number of terminals: 3. Pd (Power Dissipation, Max): 65W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-220. Type of transistor: PNP. Operating temperature: -65°C...+150°C. Vcbo: 100V. Saturation voltage VCE(sat): 1.5V. Collector/emitter voltage Vceo: 100V. Vebo: 5V. Spec info: complementary transistor (pair) BD243C. BE diode: no. CE diode: no
BD244CG
Housing: TO-220. Resistor B: Power Transistor. BE resistor: -100V. C(in): -6A. Cost): 65W. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Max hFE gain: 30. Minimum hFE gain: 15. Collector current: 6A. Ic(pulse): 10A. Number of terminals: 3. Pd (Power Dissipation, Max): 65W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-220. Type of transistor: PNP. Operating temperature: -65°C...+150°C. Vcbo: 100V. Saturation voltage VCE(sat): 1.5V. Collector/emitter voltage Vceo: 100V. Vebo: 5V. Spec info: complementary transistor (pair) BD243C. BE diode: no. CE diode: no
Set of 1
1.47$ VAT incl.
(1.47$ excl. VAT)
1.47$
Quantity in stock : 46
BD245C-CDIL

BD245C-CDIL

Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Collector current:...
BD245C-CDIL
Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Collector current: 10A. Pd (Power Dissipation, Max): 80W. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3P. Type of transistor: NPN. Collector/emitter voltage Vceo: 115V. Spec info: complementary transistor (pair) BD246C
BD245C-CDIL
Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Collector current: 10A. Pd (Power Dissipation, Max): 80W. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3P. Type of transistor: NPN. Collector/emitter voltage Vceo: 115V. Spec info: complementary transistor (pair) BD246C
Set of 1
2.12$ VAT incl.
(2.12$ excl. VAT)
2.12$
Quantity in stock : 54
BD245C-PMC

BD245C-PMC

Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Collector current:...
BD245C-PMC
Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Collector current: 10A. Pd (Power Dissipation, Max): 80W. Type of transistor: NPN. Collector/emitter voltage Vceo: 115V. Spec info: complementary transistor (pair) BD246C
BD245C-PMC
Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Collector current: 10A. Pd (Power Dissipation, Max): 80W. Type of transistor: NPN. Collector/emitter voltage Vceo: 115V. Spec info: complementary transistor (pair) BD246C
Set of 1
2.15$ VAT incl.
(2.15$ excl. VAT)
2.15$
Quantity in stock : 32
BD246C-PMC

BD246C-PMC

Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: NF/L. Collector current:...
BD246C-PMC
Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: NF/L. Collector current: 10A. Pd (Power Dissipation, Max): 80W. Assembly/installation: PCB through-hole mounting. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Type of transistor: PNP. Collector/emitter voltage Vceo: 115V. Spec info: complementary transistor (pair) BD245C. CE diode: yes
BD246C-PMC
Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: NF/L. Collector current: 10A. Pd (Power Dissipation, Max): 80W. Assembly/installation: PCB through-hole mounting. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Type of transistor: PNP. Collector/emitter voltage Vceo: 115V. Spec info: complementary transistor (pair) BD245C. CE diode: yes
Set of 1
2.33$ VAT incl.
(2.33$ excl. VAT)
2.33$
Out of stock
BD246C-TI

BD246C-TI

Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: NF/L. Collector current:...
BD246C-TI
Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: NF/L. Collector current: 10A. Pd (Power Dissipation, Max): 80W. Assembly/installation: PCB through-hole mounting. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Type of transistor: PNP. Collector/emitter voltage Vceo: 115V. Spec info: complementary transistor (pair) BD245C. CE diode: yes
BD246C-TI
Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: NF/L. Collector current: 10A. Pd (Power Dissipation, Max): 80W. Assembly/installation: PCB through-hole mounting. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Type of transistor: PNP. Collector/emitter voltage Vceo: 115V. Spec info: complementary transistor (pair) BD245C. CE diode: yes
Set of 1
3.62$ VAT incl.
(3.62$ excl. VAT)
3.62$
Quantity in stock : 99
BD249C

BD249C

Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Max hFE gain: 25. Minimum hFE gain...
BD249C
Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Max hFE gain: 25. Minimum hFE gain: 5. Collector current: 25A. Ic(pulse): 40A. Number of terminals: 3. Pd (Power Dissipation, Max): 125W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-218AB. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 100V. Saturation voltage VCE(sat): 1.8V. Collector/emitter voltage Vceo: 115V. Vebo: 5V. Spec info: complementary transistor (pair) BD250C. BE diode: no. CE diode: no
BD249C
Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Max hFE gain: 25. Minimum hFE gain: 5. Collector current: 25A. Ic(pulse): 40A. Number of terminals: 3. Pd (Power Dissipation, Max): 125W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-218AB. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 100V. Saturation voltage VCE(sat): 1.8V. Collector/emitter voltage Vceo: 115V. Vebo: 5V. Spec info: complementary transistor (pair) BD250C. BE diode: no. CE diode: no
Set of 1
2.81$ VAT incl.
(2.81$ excl. VAT)
2.81$
Quantity in stock : 86
BD249C-PMC

BD249C-PMC

Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Collector current: 25A. Pd (Power ...
BD249C-PMC
Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Collector current: 25A. Pd (Power Dissipation, Max): 125W. Assembly/installation: PCB through-hole mounting. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-218. Type of transistor: NPN. Collector/emitter voltage Vceo: 115V. Spec info: complementary transistor (pair) BD250C
BD249C-PMC
Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Collector current: 25A. Pd (Power Dissipation, Max): 125W. Assembly/installation: PCB through-hole mounting. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-218. Type of transistor: NPN. Collector/emitter voltage Vceo: 115V. Spec info: complementary transistor (pair) BD250C
Set of 1
3.07$ VAT incl.
(3.07$ excl. VAT)
3.07$
Quantity in stock : 94
BD250C

BD250C

Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Collector current: 25A. Number of ...
BD250C
Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Collector current: 25A. Number of terminals: 3. Pd (Power Dissipation, Max): 125W. Assembly/installation: PCB through-hole mounting. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Type of transistor: PNP. Collector/emitter voltage Vceo: 115V. Spec info: complementary transistor (pair) BD249C. BE diode: no. CE diode: no
BD250C
Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Collector current: 25A. Number of terminals: 3. Pd (Power Dissipation, Max): 125W. Assembly/installation: PCB through-hole mounting. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Type of transistor: PNP. Collector/emitter voltage Vceo: 115V. Spec info: complementary transistor (pair) BD249C. BE diode: no. CE diode: no
Set of 1
2.81$ VAT incl.
(2.81$ excl. VAT)
2.81$
Quantity in stock : 13
BD250C-ISC

BD250C-ISC

Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Collector current: 25A. Pd (Power ...
BD250C-ISC
Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Collector current: 25A. Pd (Power Dissipation, Max): 125W. Assembly/installation: PCB through-hole mounting. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-218. Type of transistor: PNP. Collector/emitter voltage Vceo: 115V. Spec info: complementary transistor (pair) BD249C. BE diode: no. CE diode: no
BD250C-ISC
Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Collector current: 25A. Pd (Power Dissipation, Max): 125W. Assembly/installation: PCB through-hole mounting. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-218. Type of transistor: PNP. Collector/emitter voltage Vceo: 115V. Spec info: complementary transistor (pair) BD249C. BE diode: no. CE diode: no
Set of 1
2.56$ VAT incl.
(2.56$ excl. VAT)
2.56$
Quantity in stock : 24
BD250C-PMC

BD250C-PMC

Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Collector current: 25A. Pd (Power ...
BD250C-PMC
Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Collector current: 25A. Pd (Power Dissipation, Max): 125W. Assembly/installation: PCB through-hole mounting. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-218. Type of transistor: PNP. Collector/emitter voltage Vceo: 115V. Spec info: complementary transistor (pair) BD249C. BE diode: no. CE diode: no
BD250C-PMC
Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Collector current: 25A. Pd (Power Dissipation, Max): 125W. Assembly/installation: PCB through-hole mounting. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-218. Type of transistor: PNP. Collector/emitter voltage Vceo: 115V. Spec info: complementary transistor (pair) BD249C. BE diode: no. CE diode: no
Set of 1
2.77$ VAT incl.
(2.77$ excl. VAT)
2.77$
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