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Semiconductors
Transistors

Transistors

3183 products available
Products per page :
1...103104105 106107...128
Quantity in stock : 125
MJE702

MJE702

Type of transistor: Darlington Power Transistor. Polarity: PNP. Type: Darlington transistor. Collect...
MJE702
Type of transistor: Darlington Power Transistor. Polarity: PNP. Type: Darlington transistor. Collector-Emitter Voltage VCEO: -80V. Collector current: -4A. Power: 40W. Max frequency: 1MHz. Housing: TO-126. DC Collector/Base Gain hFE min.: 750
MJE702
Type of transistor: Darlington Power Transistor. Polarity: PNP. Type: Darlington transistor. Collector-Emitter Voltage VCEO: -80V. Collector current: -4A. Power: 40W. Max frequency: 1MHz. Housing: TO-126. DC Collector/Base Gain hFE min.: 750
Set of 1
0.32$ VAT incl.
(0.32$ excl. VAT)
0.32$
Quantity in stock : 1
MJE720

MJE720

Cost): 1000pF. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Col...
MJE720
Cost): 1000pF. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Collector current: 1.5A. Pd (Power Dissipation, Max): 20W. Type of transistor: NPN. Collector/emitter voltage Vceo: 45V. BE diode: no. CE diode: no
MJE720
Cost): 1000pF. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Collector current: 1.5A. Pd (Power Dissipation, Max): 20W. Type of transistor: NPN. Collector/emitter voltage Vceo: 45V. BE diode: no. CE diode: no
Set of 1
0.74$ VAT incl.
(0.74$ excl. VAT)
0.74$
Quantity in stock : 16
MJE721

MJE721

Cost): 1000pF. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Col...
MJE721
Cost): 1000pF. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Collector current: 1.5A. Pd (Power Dissipation, Max): 20W. Type of transistor: NPN. Collector/emitter voltage Vceo: 60V. BE diode: no. CE diode: no
MJE721
Cost): 1000pF. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Collector current: 1.5A. Pd (Power Dissipation, Max): 20W. Type of transistor: NPN. Collector/emitter voltage Vceo: 60V. BE diode: no. CE diode: no
Set of 1
0.61$ VAT incl.
(0.61$ excl. VAT)
0.61$
Quantity in stock : 182
MJE800G

MJE800G

RoHS: yes. Housing: PCB soldering. Housing: TO-225. Housing (JEDEC standard): TO-225. Configuration:...
MJE800G
RoHS: yes. Housing: PCB soldering. Housing: TO-225. Housing (JEDEC standard): TO-225. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MJE800G. Collector-emitter voltage Uceo [V]: 60V. Collector current Ic [A], max.: 4A. Maximum dissipation Ptot [W]: 40W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: NPN power transistor
MJE800G
RoHS: yes. Housing: PCB soldering. Housing: TO-225. Housing (JEDEC standard): TO-225. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MJE800G. Collector-emitter voltage Uceo [V]: 60V. Collector current Ic [A], max.: 4A. Maximum dissipation Ptot [W]: 40W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: NPN power transistor
Set of 1
0.75$ VAT incl.
(0.75$ excl. VAT)
0.75$
Quantity in stock : 44
MJE803

MJE803

RoHS: no. Housing: PCB soldering. Housing: TO-225. Housing (JEDEC standard): TO-225. Configuration: ...
MJE803
RoHS: no. Housing: PCB soldering. Housing: TO-225. Housing (JEDEC standard): TO-225. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MJE803. Collector-emitter voltage Uceo [V]: 80V. Collector current Ic [A], max.: 4A. Maximum dissipation Ptot [W]: 40W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: NPN power transistor
MJE803
RoHS: no. Housing: PCB soldering. Housing: TO-225. Housing (JEDEC standard): TO-225. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MJE803. Collector-emitter voltage Uceo [V]: 80V. Collector current Ic [A], max.: 4A. Maximum dissipation Ptot [W]: 40W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: NPN power transistor
Set of 1
0.95$ VAT incl.
(0.95$ excl. VAT)
0.95$
Out of stock
MJF18004G

MJF18004G

Type of transistor: Power Transistor. Polarity: NPN. Applications: switching. Collector-Emitter Volt...
MJF18004G
Type of transistor: Power Transistor. Polarity: NPN. Applications: switching. Collector-Emitter Voltage VCEO: 1000V. Collector current: 5A. Power: 35W. Max frequency: 13MHz. Housing: TO-220-F
MJF18004G
Type of transistor: Power Transistor. Polarity: NPN. Applications: switching. Collector-Emitter Voltage VCEO: 1000V. Collector current: 5A. Power: 35W. Max frequency: 13MHz. Housing: TO-220-F
Set of 1
2.94$ VAT incl.
(2.94$ excl. VAT)
2.94$
Quantity in stock : 28
MJF18008

MJF18008

Cost): 80pF. Quantity per case: 1. Semiconductor material: silicon. Function: (F). Collector current...
MJF18008
Cost): 80pF. Quantity per case: 1. Semiconductor material: silicon. Function: (F). Collector current: 8A. Pd (Power Dissipation, Max): 45W. Assembly/installation: PCB through-hole mounting. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Type of transistor: NPN. Vcbo: 1000V. Collector/emitter voltage Vceo: 450V. BE diode: no. CE diode: no
MJF18008
Cost): 80pF. Quantity per case: 1. Semiconductor material: silicon. Function: (F). Collector current: 8A. Pd (Power Dissipation, Max): 45W. Assembly/installation: PCB through-hole mounting. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Type of transistor: NPN. Vcbo: 1000V. Collector/emitter voltage Vceo: 450V. BE diode: no. CE diode: no
Set of 1
2.76$ VAT incl.
(2.76$ excl. VAT)
2.76$
Quantity in stock : 25
MJF18204

MJF18204

BE resistor: 50. Cost): 156pF. Quantity per case: 1. Semiconductor material: silicon. FT: 13 MHz. Fu...
MJF18204
BE resistor: 50. Cost): 156pF. Quantity per case: 1. Semiconductor material: silicon. FT: 13 MHz. Function: switching circuits. Max hFE gain: 35. Minimum hFE gain: 18. Collector current: 5A. Ic(pulse): 10A. Number of terminals: 3. Pd (Power Dissipation, Max): 35W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 175 ns. Tf(min): 110 ns. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Type of transistor: NPN. Operating temperature: -65...+175°C. Vcbo: 1200V. Saturation voltage VCE(sat): 0.83V. Collector/emitter voltage Vceo: 600V. Vebo: 10V. BE diode: no. CE diode: yes
MJF18204
BE resistor: 50. Cost): 156pF. Quantity per case: 1. Semiconductor material: silicon. FT: 13 MHz. Function: switching circuits. Max hFE gain: 35. Minimum hFE gain: 18. Collector current: 5A. Ic(pulse): 10A. Number of terminals: 3. Pd (Power Dissipation, Max): 35W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 175 ns. Tf(min): 110 ns. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Type of transistor: NPN. Operating temperature: -65...+175°C. Vcbo: 1200V. Saturation voltage VCE(sat): 0.83V. Collector/emitter voltage Vceo: 600V. Vebo: 10V. BE diode: no. CE diode: yes
Set of 1
2.44$ VAT incl.
(2.44$ excl. VAT)
2.44$
Quantity in stock : 35
MJL1302A

MJL1302A

Cost): 1.7pF. Conditioning: plastic tube. Conditioning unit: 25. Quantity per case: 1. Semiconductor...
MJL1302A
Cost): 1.7pF. Conditioning: plastic tube. Conditioning unit: 25. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: hFE 45(min). Max hFE gain: 150. Minimum hFE gain: 45. Collector current: 15A. Ic(pulse): 25A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 260V. Saturation voltage VCE(sat): 3V. Collector/emitter voltage Vceo: 260V. Vebo: 5V. Spec info: complementary transistor (pair) MJL3281A. BE diode: no. CE diode: no
MJL1302A
Cost): 1.7pF. Conditioning: plastic tube. Conditioning unit: 25. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: hFE 45(min). Max hFE gain: 150. Minimum hFE gain: 45. Collector current: 15A. Ic(pulse): 25A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 260V. Saturation voltage VCE(sat): 3V. Collector/emitter voltage Vceo: 260V. Vebo: 5V. Spec info: complementary transistor (pair) MJL3281A. BE diode: no. CE diode: no
Set of 1
8.71$ VAT incl.
(8.71$ excl. VAT)
8.71$
Quantity in stock : 5
MJL16128

MJL16128

Cost): 2.3pF. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: NF-L, TO-2...
MJL16128
Cost): 2.3pF. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: NF-L, TO-264. Collector current: 15A. Pd (Power Dissipation, Max): 170W. Type of transistor: NPN. Vcbo: 1500V. Collector/emitter voltage Vceo: 650V. Spec info: TO-3PBL. BE diode: no. CE diode: no
MJL16128
Cost): 2.3pF. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: NF-L, TO-264. Collector current: 15A. Pd (Power Dissipation, Max): 170W. Type of transistor: NPN. Vcbo: 1500V. Collector/emitter voltage Vceo: 650V. Spec info: TO-3PBL. BE diode: no. CE diode: no
Set of 1
11.28$ VAT incl.
(11.28$ excl. VAT)
11.28$
Quantity in stock : 154
MJL21193

MJL21193

Cost): 500pF. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: hFE=25 Min...
MJL21193
Cost): 500pF. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: hFE=25 Min @ IC =8Adc. Max hFE gain: 75. Minimum hFE gain: 25. Collector current: 16A. Ic(pulse): 30A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO–3PBL. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 400V. Saturation voltage VCE(sat): 1.4V. Collector/emitter voltage Vceo: 250V. Vebo: 5V. Spec info: complementary transistor (pair) MJL21194. BE diode: no. CE diode: no
MJL21193
Cost): 500pF. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: hFE=25 Min @ IC =8Adc. Max hFE gain: 75. Minimum hFE gain: 25. Collector current: 16A. Ic(pulse): 30A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO–3PBL. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 400V. Saturation voltage VCE(sat): 1.4V. Collector/emitter voltage Vceo: 250V. Vebo: 5V. Spec info: complementary transistor (pair) MJL21194. BE diode: no. CE diode: no
Set of 1
8.73$ VAT incl.
(8.73$ excl. VAT)
8.73$
Quantity in stock : 144
MJL21194

MJL21194

Cost): 6pF. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: hFE=25 Min @...
MJL21194
Cost): 6pF. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: hFE=25 Min @ IC=8Adc. Max hFE gain: 75. Minimum hFE gain: 25. Collector current: 16A. Ic(pulse): 30A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial-Base'. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO–3PBL. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 400V. Saturation voltage VCE(sat): 1.4V. Collector/emitter voltage Vceo: 250V. Vebo: 5V. Spec info: complementary transistor (pair) MJL21193. BE diode: no. CE diode: no
MJL21194
Cost): 6pF. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: hFE=25 Min @ IC=8Adc. Max hFE gain: 75. Minimum hFE gain: 25. Collector current: 16A. Ic(pulse): 30A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial-Base'. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO–3PBL. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 400V. Saturation voltage VCE(sat): 1.4V. Collector/emitter voltage Vceo: 250V. Vebo: 5V. Spec info: complementary transistor (pair) MJL21193. BE diode: no. CE diode: no
Set of 1
8.73$ VAT incl.
(8.73$ excl. VAT)
8.73$
Quantity in stock : 15
MJL21194G

MJL21194G

Type of transistor: NPN transistor. Polarity: NPN. Function: HI-FI Power Amplifier. Collector-Emitte...
MJL21194G
Type of transistor: NPN transistor. Polarity: NPN. Function: HI-FI Power Amplifier. Collector-Emitter Voltage VCEO: 250V. Collector current: 16A. Power: 200W. Housing: TO-264
MJL21194G
Type of transistor: NPN transistor. Polarity: NPN. Function: HI-FI Power Amplifier. Collector-Emitter Voltage VCEO: 250V. Collector current: 16A. Power: 200W. Housing: TO-264
Set of 1
8.21$ VAT incl.
(8.21$ excl. VAT)
8.21$
Out of stock
MJL21195

MJL21195

C(in): 30pF. Cost): 8pF. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function:...
MJL21195
C(in): 30pF. Cost): 8pF. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: hFE=25 Min @ IC=8Adc. Max hFE gain: 100. Minimum hFE gain: 25. Collector current: 16A. Ic(pulse): 30A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 400V. Saturation voltage VCE(sat): 1.4V. Collector/emitter voltage Vceo: 250V. Vebo: 5V. Spec info: complementary transistor (pair) MJL21196. BE diode: no. CE diode: no
MJL21195
C(in): 30pF. Cost): 8pF. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: hFE=25 Min @ IC=8Adc. Max hFE gain: 100. Minimum hFE gain: 25. Collector current: 16A. Ic(pulse): 30A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 400V. Saturation voltage VCE(sat): 1.4V. Collector/emitter voltage Vceo: 250V. Vebo: 5V. Spec info: complementary transistor (pair) MJL21196. BE diode: no. CE diode: no
Set of 1
10.03$ VAT incl.
(10.03$ excl. VAT)
10.03$
Out of stock
MJL21196

MJL21196

Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: hFE=25 Min @ IC=8Adc. Ma...
MJL21196
Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: hFE=25 Min @ IC=8Adc. Max hFE gain: 100. Minimum hFE gain: 25. Collector current: 16A. Ic(pulse): 30A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. Assembly/installation: PCB through-hole mounting. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 400V. Saturation voltage VCE(sat): 1.4V. Collector/emitter voltage Vceo: 250V. Vebo: 5V. Spec info: complementary transistor (pair) MJL21195. BE diode: no. CE diode: no
MJL21196
Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: hFE=25 Min @ IC=8Adc. Max hFE gain: 100. Minimum hFE gain: 25. Collector current: 16A. Ic(pulse): 30A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. Assembly/installation: PCB through-hole mounting. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 400V. Saturation voltage VCE(sat): 1.4V. Collector/emitter voltage Vceo: 250V. Vebo: 5V. Spec info: complementary transistor (pair) MJL21195. BE diode: no. CE diode: no
Set of 1
10.03$ VAT incl.
(10.03$ excl. VAT)
10.03$
Quantity in stock : 13
MJL3281A

MJL3281A

Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: Complementary Bipolar P...
MJL3281A
Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: Complementary Bipolar Power Transistor. Max hFE gain: 150. Minimum hFE gain: 45. Collector current: 15A. Ic(pulse): 25A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 260V. Saturation voltage VCE(sat): 3V. Collector/emitter voltage Vceo: 260V. Vebo: 5V. Spec info: complementary transistor (pair) MJL1302A. BE diode: no. CE diode: no
MJL3281A
Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: Complementary Bipolar Power Transistor. Max hFE gain: 150. Minimum hFE gain: 45. Collector current: 15A. Ic(pulse): 25A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 260V. Saturation voltage VCE(sat): 3V. Collector/emitter voltage Vceo: 260V. Vebo: 5V. Spec info: complementary transistor (pair) MJL1302A. BE diode: no. CE diode: no
Set of 1
12.03$ VAT incl.
(12.03$ excl. VAT)
12.03$
Quantity in stock : 32
MJL4281A

MJL4281A

BE diode: no. CE diode: no. Conditioning: plastic tube. Conditioning unit: 25. Quantity per case: 1....
MJL4281A
BE diode: no. CE diode: no. Conditioning: plastic tube. Conditioning unit: 25. Quantity per case: 1. Semiconductor material: silicon. FT: 35 MHz. Function: Power audio, Low Harmonic Distortion. Max hFE gain: 250. Minimum hFE gain: 50. Collector current: 15A. Ic(pulse): 30A. Number of terminals: 3. Pd (Power Dissipation, Max): 230W. RoHS: yes. Spec info: complementary transistor (pair) MJL4302A. Assembly/installation: PCB through-hole mounting. Technology: Silicon Power Bipolar Transistor. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264. Type of transistor: NPN. Operating temperature: -60...+150°C. Vcbo: 350V. Saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 350V. Vebo: 5V
MJL4281A
BE diode: no. CE diode: no. Conditioning: plastic tube. Conditioning unit: 25. Quantity per case: 1. Semiconductor material: silicon. FT: 35 MHz. Function: Power audio, Low Harmonic Distortion. Max hFE gain: 250. Minimum hFE gain: 50. Collector current: 15A. Ic(pulse): 30A. Number of terminals: 3. Pd (Power Dissipation, Max): 230W. RoHS: yes. Spec info: complementary transistor (pair) MJL4302A. Assembly/installation: PCB through-hole mounting. Technology: Silicon Power Bipolar Transistor. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264. Type of transistor: NPN. Operating temperature: -60...+150°C. Vcbo: 350V. Saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 350V. Vebo: 5V
Set of 1
9.00$ VAT incl.
(9.00$ excl. VAT)
9.00$
Quantity in stock : 11
MJL4302A

MJL4302A

Conditioning: plastic tube. Conditioning unit: 25. Quantity per case: 1. Semiconductor material: sil...
MJL4302A
Conditioning: plastic tube. Conditioning unit: 25. Quantity per case: 1. Semiconductor material: silicon. FT: 35 MHz. Max hFE gain: 250. Minimum hFE gain: 50. Collector current: 15A. Ic(pulse): 30A. Number of terminals: 3. Pd (Power Dissipation, Max): 230W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: Silicon Power Bipolar Transistor. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264. Type of transistor: PNP. Operating temperature: -60...+150°C. Vcbo: 350V. Saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 350V. Vebo: 5V. Function: Power audio, Low Harmonic Distortion. Spec info: complementary transistor (pair) MJL4281A. BE diode: no. CE diode: no
MJL4302A
Conditioning: plastic tube. Conditioning unit: 25. Quantity per case: 1. Semiconductor material: silicon. FT: 35 MHz. Max hFE gain: 250. Minimum hFE gain: 50. Collector current: 15A. Ic(pulse): 30A. Number of terminals: 3. Pd (Power Dissipation, Max): 230W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: Silicon Power Bipolar Transistor. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264. Type of transistor: PNP. Operating temperature: -60...+150°C. Vcbo: 350V. Saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 350V. Vebo: 5V. Function: Power audio, Low Harmonic Distortion. Spec info: complementary transistor (pair) MJL4281A. BE diode: no. CE diode: no
Set of 1
9.73$ VAT incl.
(9.73$ excl. VAT)
9.73$
Quantity in stock : 57
MJW1302AG

MJW1302AG

Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: Complementary Bipolar P...
MJW1302AG
Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: Complementary Bipolar Power Transistor. Production date: 201446. Max hFE gain: 200. Minimum hFE gain: 50. Collector current: 15A. Ic(pulse): 25A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-247. Housing (according to data sheet): TO-247. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 230V. Saturation voltage VCE(sat): 0.4V. Collector/emitter voltage Vceo: 230V. Vebo: 5V. Technology: Power Bipolar Transistor. Spec info: complementary transistor (pair) MJW3281A. BE diode: no. CE diode: no
MJW1302AG
Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: Complementary Bipolar Power Transistor. Production date: 201446. Max hFE gain: 200. Minimum hFE gain: 50. Collector current: 15A. Ic(pulse): 25A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-247. Housing (according to data sheet): TO-247. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 230V. Saturation voltage VCE(sat): 0.4V. Collector/emitter voltage Vceo: 230V. Vebo: 5V. Technology: Power Bipolar Transistor. Spec info: complementary transistor (pair) MJW3281A. BE diode: no. CE diode: no
Set of 1
8.13$ VAT incl.
(8.13$ excl. VAT)
8.13$
Quantity in stock : 157
MJW21195

MJW21195

Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: Excellent Gain Linearity...
MJW21195
Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: Excellent Gain Linearity. Production date: 2015/04. Max hFE gain: 80. Minimum hFE gain: 20. Collector current: 16A. Ic(pulse): 30A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-247. Housing (according to data sheet): TO-247. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 400V. Saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 250V. Vebo: 5V. Spec info: complementary transistor (pair) MJW21196. BE diode: no. CE diode: no
MJW21195
Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: Excellent Gain Linearity. Production date: 2015/04. Max hFE gain: 80. Minimum hFE gain: 20. Collector current: 16A. Ic(pulse): 30A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-247. Housing (according to data sheet): TO-247. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 400V. Saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 250V. Vebo: 5V. Spec info: complementary transistor (pair) MJW21196. BE diode: no. CE diode: no
Set of 1
7.89$ VAT incl.
(7.89$ excl. VAT)
7.89$
Out of stock
MJW21196

MJW21196

Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: Excellent Gain Linearity...
MJW21196
Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: Excellent Gain Linearity. Max hFE gain: 80. Minimum hFE gain: 20. Collector current: 16A. Ic(pulse): 30A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-247. Housing (according to data sheet): TO-247. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 250V. Saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 400V. Vebo: 5V. Spec info: complementary transistor (pair) MJW21195. BE diode: no. CE diode: no
MJW21196
Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: Excellent Gain Linearity. Max hFE gain: 80. Minimum hFE gain: 20. Collector current: 16A. Ic(pulse): 30A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-247. Housing (according to data sheet): TO-247. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 250V. Saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 400V. Vebo: 5V. Spec info: complementary transistor (pair) MJW21195. BE diode: no. CE diode: no
Set of 1
7.85$ VAT incl.
(7.85$ excl. VAT)
7.85$
Quantity in stock : 55
MJW3281AG

MJW3281AG

Cost): 2.8pF. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: Complemen...
MJW3281AG
Cost): 2.8pF. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: Complementary Bipolar Power Transistor. Production date: 201444 201513. Max hFE gain: 200. Minimum hFE gain: 50. Collector current: 15A. Ic(pulse): 25A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-247. Housing (according to data sheet): TO-247. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 230V. Saturation voltage VCE(sat): 0.4V. Collector/emitter voltage Vceo: 230V. Vebo: 5V. Technology: Power Bipolar Transistor. Spec info: complementary transistor (pair) MJW1302A. BE diode: no. CE diode: no
MJW3281AG
Cost): 2.8pF. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: Complementary Bipolar Power Transistor. Production date: 201444 201513. Max hFE gain: 200. Minimum hFE gain: 50. Collector current: 15A. Ic(pulse): 25A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-247. Housing (according to data sheet): TO-247. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 230V. Saturation voltage VCE(sat): 0.4V. Collector/emitter voltage Vceo: 230V. Vebo: 5V. Technology: Power Bipolar Transistor. Spec info: complementary transistor (pair) MJW1302A. BE diode: no. CE diode: no
Set of 1
5.30$ VAT incl.
(5.30$ excl. VAT)
5.30$
Quantity in stock : 41
MLP2N06CL

MLP2N06CL

Channel type: N. Drain-source protection : diode. Type of transistor: MOSFET. Function: Car electron...
MLP2N06CL
Channel type: N. Drain-source protection : diode. Type of transistor: MOSFET. Function: Car electronics. ID (T=25°C): 2A. Idss (max): 6uA. IDss (min): 0.6uA. Marking on the case: L2N06CL. Pd (Power Dissipation, Max): 40W. On-resistance Rds On: 0.3 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 5us. Td(on): 1us. Technology: SMARTDISCRETES MOSFET Logic Level. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -50...+150°C. Voltage Vds(max): 62V. Gate/source voltage Vgs: 10V. Vgs(th) min.: 1V. Number of terminals: 3. Quantity per case: 1. Spec info: MOSFET HYBRID. G-S Protection: yes
MLP2N06CL
Channel type: N. Drain-source protection : diode. Type of transistor: MOSFET. Function: Car electronics. ID (T=25°C): 2A. Idss (max): 6uA. IDss (min): 0.6uA. Marking on the case: L2N06CL. Pd (Power Dissipation, Max): 40W. On-resistance Rds On: 0.3 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 5us. Td(on): 1us. Technology: SMARTDISCRETES MOSFET Logic Level. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -50...+150°C. Voltage Vds(max): 62V. Gate/source voltage Vgs: 10V. Vgs(th) min.: 1V. Number of terminals: 3. Quantity per case: 1. Spec info: MOSFET HYBRID. G-S Protection: yes
Set of 1
2.32$ VAT incl.
(2.32$ excl. VAT)
2.32$
Quantity in stock : 7131
MMBF170

MMBF170

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: SOT-23. Configura...
MMBF170
RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: SOT-23. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: MMBF170. Drain-source voltage Uds [V]: 60V. Drain Current Id [A] @ 25°C: 0.5A. Drain current through resistor Rds [Ohm] @ Ids [A]: 1.2 Ohms @ 0.2A. Gate breakdown voltage Ugs [V]: 3V. Switch-on time ton [nsec.]: 10 ns. Switch-off delay tf[nsec.]: 10 ns. Ciss Gate Capacitance [pF]: 40pF. Maximum dissipation Ptot [W]: 0.3W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C
MMBF170
RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: SOT-23. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: MMBF170. Drain-source voltage Uds [V]: 60V. Drain Current Id [A] @ 25°C: 0.5A. Drain current through resistor Rds [Ohm] @ Ids [A]: 1.2 Ohms @ 0.2A. Gate breakdown voltage Ugs [V]: 3V. Switch-on time ton [nsec.]: 10 ns. Switch-off delay tf[nsec.]: 10 ns. Ciss Gate Capacitance [pF]: 40pF. Maximum dissipation Ptot [W]: 0.3W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C
Set of 1
0.44$ VAT incl.
(0.44$ excl. VAT)
0.44$
Quantity in stock : 8074
MMBF170LT1G

MMBF170LT1G

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (...
MMBF170LT1G
RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236AB. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 6Z. Drain-source voltage Uds [V]: 60V. Drain Current Id [A] @ 25°C: 0.5A. Drain current through resistor Rds [Ohm] @ Ids [A]: 5 Ohms @ 0.2A. Gate breakdown voltage Ugs [V]: 3V. Switch-on time ton [nsec.]: 10 ns. Switch-off delay tf[nsec.]: 10 ns. Ciss Gate Capacitance [pF]: 60pF. Maximum dissipation Ptot [W]: 0.225W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C
MMBF170LT1G
RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236AB. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 6Z. Drain-source voltage Uds [V]: 60V. Drain Current Id [A] @ 25°C: 0.5A. Drain current through resistor Rds [Ohm] @ Ids [A]: 5 Ohms @ 0.2A. Gate breakdown voltage Ugs [V]: 3V. Switch-on time ton [nsec.]: 10 ns. Switch-off delay tf[nsec.]: 10 ns. Ciss Gate Capacitance [pF]: 60pF. Maximum dissipation Ptot [W]: 0.225W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C
Set of 1
0.31$ VAT incl.
(0.31$ excl. VAT)
0.31$
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