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Semiconductors Transistors

MJL3281A

MJL3281A
[TITLE]
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 1 12.03$ 12.03$
2 - 2 11.43$ 11.43$
3 - 4 10.83$ 10.83$
5 - 9 10.23$ 10.23$
10 - 13 9.99$ 9.99$
Quantity U.P
1 - 1 12.03$ 12.03$
2 - 2 11.43$ 11.43$
3 - 4 10.83$ 10.83$
5 - 9 10.23$ 10.23$
10 - 13 9.99$ 9.99$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 13
Set of 1

MJL3281A. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: Complementary Bipolar Power Transistor. Max hFE gain: 150. Minimum hFE gain: 45. Collector current: 15A. Ic(pulse): 25A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 260V. Saturation voltage VCE(sat): 3V. Collector/emitter voltage Vceo: 260V. Vebo: 5V. Spec info: complementary transistor (pair) MJL1302A. BE diode: no. CE diode: no. Quantity in stock updated on 24/12/2024, 17:25.

Technical documentation

Equivalent products :

Quantity in stock : 252
2SC5200

2SC5200

Cost): 200pF. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: HI-FI Pow...
2SC5200
Cost): 200pF. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: HI-FI Power Amplifier. Max hFE gain: 160. Minimum hFE gain: 80. Collector current: 15A. Marking on the case: C5200 (Q). Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 150W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused Planar Transistor'. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264 ( 2-21F1A ). Type of transistor: NPN. Operating temperature: -...+150°C. Vcbo: 230V. Saturation voltage VCE(sat): 0.4V. Collector/emitter voltage Vceo: 230V. Vebo: 5V. Spec info: complementary transistor (pair) 2SA1943. BE diode: no. CE diode: no
2SC5200
Cost): 200pF. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: HI-FI Power Amplifier. Max hFE gain: 160. Minimum hFE gain: 80. Collector current: 15A. Marking on the case: C5200 (Q). Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 150W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused Planar Transistor'. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264 ( 2-21F1A ). Type of transistor: NPN. Operating temperature: -...+150°C. Vcbo: 230V. Saturation voltage VCE(sat): 0.4V. Collector/emitter voltage Vceo: 230V. Vebo: 5V. Spec info: complementary transistor (pair) 2SA1943. BE diode: no. CE diode: no
Set of 1
7.86$ VAT incl.
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Quantity in stock : 26
2SC3281

2SC3281

Semiconductor material: silicon. FT: 30 MHz. Function: NF-E HI-FI. Collector current: 15A. Pd (Power...
2SC3281
Semiconductor material: silicon. FT: 30 MHz. Function: NF-E HI-FI. Collector current: 15A. Pd (Power Dissipation, Max): 150W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264. Type of transistor: NPN. Collector/emitter voltage Vceo: 200V. Number of terminals: 3. Quantity per case: 1. Spec info: complementary transistor (pair) 2SA1302. BE diode: no. CE diode: no
2SC3281
Semiconductor material: silicon. FT: 30 MHz. Function: NF-E HI-FI. Collector current: 15A. Pd (Power Dissipation, Max): 150W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264. Type of transistor: NPN. Collector/emitter voltage Vceo: 200V. Number of terminals: 3. Quantity per case: 1. Spec info: complementary transistor (pair) 2SA1302. BE diode: no. CE diode: no
Set of 1
2.86$ VAT incl.
(2.86$ excl. VAT)
2.86$

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2SB649A

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IRFP9140N

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C(in): 1300pF. Cost): 400pF. Channel type: P. Quantity per case: 1. Trr Diode (Min.): 150 ns. Type o...
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MJE340

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MICA-TO247

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MJE340-ONS

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IRFP140N

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