MJW21196

Quantity	excl. VAT	VAT incl.
1 - 1	7.85$	7.85$
2 - 2	7.46$	7.46$
3 - 4	7.07$	7.07$
5 - 9	6.67$	6.67$
10 - 19	6.52$	6.52$
20 - 29	6.36$	6.36$
30+	6.12$	6.12$

Quantity	U.P
1 - 1	7.85$	7.85$
2 - 2	7.46$	7.46$
3 - 4	7.07$	7.07$
5 - 9	6.67$	6.67$
10 - 19	6.52$	6.52$
20 - 29	6.36$	6.36$
30+	6.12$	6.12$

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Out of stock

Set of 1

MJW21196. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: Excellent Gain Linearity. Max hFE gain: 80. Minimum hFE gain: 20. Collector current: 16A. Ic(pulse): 30A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-247. Housing (according to data sheet): TO-247. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 250V. Saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 400V. Vebo: 5V. Spec info: complementary transistor (pair) MJW21195. BE diode: no. CE diode: no. Quantity in stock updated on 15/01/2025, 19:25.

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Delivery in 2-3 days, with postal tracking!