MJW21195

Quantity	excl. VAT	VAT incl.
1 - 1	7.89$	7.89$
2 - 2	7.50$	7.50$
3 - 4	7.10$	7.10$
5 - 9	6.71$	6.71$
10 - 19	6.55$	6.55$
20 - 29	6.39$	6.39$
30 - 157	6.15$	6.15$

Quantity	U.P
1 - 1	7.89$	7.89$
2 - 2	7.50$	7.50$
3 - 4	7.10$	7.10$
5 - 9	6.71$	6.71$
10 - 19	6.55$	6.55$
20 - 29	6.39$	6.39$
30 - 157	6.15$	6.15$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 157

Set of 1

MJW21195. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: Excellent Gain Linearity. Production date: 2015/04. Max hFE gain: 80. Minimum hFE gain: 20. Collector current: 16A. Ic(pulse): 30A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-247. Housing (according to data sheet): TO-247. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 400V. Saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 250V. Vebo: 5V. Spec info: complementary transistor (pair) MJW21196. BE diode: no. CE diode: no. Quantity in stock updated on 15/01/2025, 19:25.

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Delivery in 2-3 days, with postal tracking!