Transistors

RoHS: yes. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 1S. Collector-emitter voltage Uceo [V]: 15V. Collector current Ic [A], max.: 200mA. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.225W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: NPN transistor

ROHS: Yes. Housing: SOT23. Frequency: 200MHz. Assembly/installation: SMD. Type of transistor: PNP. Polarity: bipolar. Voltage (collector - emitter): 60V. Collector current Ic [A]: 0.6A. Gain hfe: 50...300. Power: 0.25W

RoHS: yes. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 2F. Collector-emitter voltage Uceo [V]: 60V. Collector current Ic [A], max.: 800mA. Cutoff frequency ft [MHz]: 200 MHz. Maximum dissipation Ptot [W]: 0.35W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: PNP transistor

Cost): 1.6pF. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Max hFE gain: 300. Minimum hFE gain: 100. Collector current: 0.6A. Ic(pulse): 1.2A. Marking on the case: 2F. Number of terminals: 3. Pd (Power Dissipation, Max): 225mW. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 60V. Saturation voltage VCE(sat): 0.4V. Collector/emitter voltage Vceo: 60V. Vebo: 5V. Spec info: SMD '2F'. BE diode: no. CE diode: no

RoHS: yes. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 1AM. Collector-emitter voltage Uceo [V]: 40V. Collector current Ic [A], max.: 200mA. Cutoff frequency ft [MHz]: 300 MHz. Maximum dissipation Ptot [W]: 0.35W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: NPN transistor

RoHS: yes. Resistor B: yes. BE resistor: PCB soldering (SMD). C(in): SOT-23. Cost): 1.6pF. Quantity per case: 1. Semiconductor material: silicon. FT: 300 MHz. Function: UNI. Max hFE gain: 300. Minimum hFE gain: 100. Collector current: 0.2A. Marking on the case: 1AM. Pd (Power Dissipation, Max): 0.2W. Assembly/installation: surface-mounted component (SMD). Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23. Type of transistor: NPN. Vcbo: 40V. Collector/emitter voltage Vceo: 60V. Spec info: SMD 1AM. BE diode: no. CE diode: no

ROHS: Yes. Housing: SOT23

RoHS: yes. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 2A. Collector-emitter voltage Uceo [V]: 40V. Collector current Ic [A], max.: 200mA. Cutoff frequency ft [MHz]: 250 MHz. Maximum dissipation Ptot [W]: 0.225W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: PNP transistor. Marking on the case: 2A. Number of terminals: 3. Pd (Power Dissipation, Max): 225mW. Assembly/installation: surface-mounted component (SMD). Tf(max): 75 ns. Tf(min): 35 ns. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 40V. Saturation voltage VCE(sat): 0.25V. Collector/emitter voltage Vceo: 40V. Vebo: 5V. Spec info: SMD 2A

Cost): 80pF. Conditioning: roll. Conditioning unit: 3000. Quantity per case: 1. Semiconductor material: silicon. FT: 250 MHz. Function: Switching Transistor. Max hFE gain: 300. Minimum hFE gain: 20. Collector current: 0.6A. Ic(pulse): 0.9A. Marking on the case: 2x. Number of terminals: 3. Pd (Power Dissipation, Max): 300mW. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Tf(max): 30 ns. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 60V. Saturation voltage VCE(sat): 0.4V. Collector/emitter voltage Vceo: 40V. Vebo: 6V. Spec info: screen printing/CMS code 2X. BE diode: no. CE diode: no

RoHS: yes. Housing: PCB soldering (SMD). Housing: SOT-23. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 2T. Collector-emitter voltage Uceo [V]: 40V. Collector current Ic [A], max.: 600mA. Cutoff frequency ft [MHz]: 200 MHz. Maximum dissipation Ptot [W]: 0.25W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: PNP transistor

Conditioning: roll. Conditioning unit: 3000. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Max hFE gain: 300. Minimum hFE gain: 30. Collector current: 0.6A. Marking on the case: 2T. Number of terminals: 3. Pd (Power Dissipation, Max): 0.3W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Tf(max): 30 ns. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 40V. Saturation voltage VCE(sat): 0.4V. Collector/emitter voltage Vceo: 40V. Vebo: 5V. BE diode: no. CE diode: no

RoHS: yes. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 2L. Collector-emitter voltage Uceo [V]: 150V. Collector current Ic [A], max.: 600mA. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.250W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: PNP transistor. Marking on the case: 2 L. Equivalents: MMBT5401LT1G. Number of terminals: 3. Pd (Power Dissipation, Max): 300mW. Assembly/installation: surface-mounted component (SMD). Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 160V. Saturation voltage VCE(sat): 0.2V. Collector/emitter voltage Vceo: 150V. Vebo: 5V. Spec info: screen printing/SMD code (2Lx Date Code)

RoHS: yes. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 2L. Collector-emitter voltage Uceo [V]: 150V. Collector current Ic [A], max.: 500mA. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.225W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: PNP transistor

Conditioning: roll. Conditioning unit: 3000. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 250. Minimum hFE gain: 60. Collector current: 0.6A. Marking on the case: G1. Equivalents: MMBT5551LT1G. Number of terminals: 3. Pd (Power Dissipation, Max): 300mW. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 180V. Saturation voltage VCE(sat): 0.15V. Collector/emitter voltage Vceo: 160V. Vebo: 6V. Spec info: screen printing/SMD code G1 (3S Fairchild). BE diode: no. CE diode: no

RoHS: yes. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: G1. Collector-emitter voltage Uceo [V]: 160V. Collector current Ic [A], max.: 600mA. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.225W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: NPN transistor

RoHS: yes. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 1GM. Collector-emitter voltage Uceo [V]: 80V. Collector current Ic [A], max.: 500mA. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.25W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: NPN transistor

RoHS: yes. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 1GM. Collector-emitter voltage Uceo [V]: 80V. Collector current Ic [A], max.: 500mA. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.225W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: NPN transistor

Conditioning: roll. Conditioning unit: 3000. Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: high voltage amplifier transistor (SMD version of the MPSA42 transistor). Max hFE gain: 40. Minimum hFE gain: 25. Collector current: 0.5A. Note: 1D. Marking on the case: 1D. Number of terminals: 3. Pd (Power Dissipation, Max): 240mW. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 300V. Saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 300V. Vebo: 6V. Spec info: complementary transistor (pair) MMBTA92. BE diode: no. CE diode: no

RoHS: yes. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 1D. Collector-emitter voltage Uceo [V]: 300V. Collector current Ic [A], max.: 500mA. Cutoff frequency ft [MHz]: 50 MHz. Maximum dissipation Ptot [W]: 0.225W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: NPN transistor

RoHS: yes. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 2GM. Collector-emitter voltage Uceo [V]: 60V. Collector current Ic [A], max.: 500mA. Cutoff frequency ft [MHz]: 50 MHz. Maximum dissipation Ptot [W]: 0.250W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: PNP transistor

RoHS: yes. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 2GM. Collector-emitter voltage Uceo [V]: 80V. Collector current Ic [A], max.: 500mA. Cutoff frequency ft [MHz]: 50 MHz. Maximum dissipation Ptot [W]: 0.225W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: PNP transistor

Cost): 170pF. Conditioning: roll. Conditioning unit: 3000. Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: high voltage amplifier transistor (SMD version of the MPSA42 transistor). Max hFE gain: 40. Minimum hFE gain: 25. Collector current: 0.5A. Note: 2D. Marking on the case: 2D. Equivalents: PMBTA92.215. Number of terminals: 3. Pd (Power Dissipation, Max): 300mW. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 300V. Saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 300V. Vebo: 5V. Spec info: complementary transistor (pair) MMBTA42. BE diode: no. CE diode: no

RoHS: yes. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 2D. Collector-emitter voltage Uceo [V]: 300V. Collector current Ic [A], max.: 500mA. Cutoff frequency ft [MHz]: 50 MHz. Maximum dissipation Ptot [W]: 0.250W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: PNP transistor

RoHS: yes. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 2D. Collector-emitter voltage Uceo [V]: 300V. Collector current Ic [A], max.: 500mA. Cutoff frequency ft [MHz]: 50 MHz. Maximum dissipation Ptot [W]: 0.225W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: PNP transistor

RoHS: no. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 3EM. Collector-emitter voltage Uceo [V]: 25V. Collector current Ic [A], max.: 5mA. Cutoff frequency ft [MHz]: 650 MHz. Maximum dissipation Ptot [W]: 0.35W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: NPN transistor