Transistors

RoHS: yes. Housing: PCB soldering (SMD). Housing: SOT-23. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 6K. Drain-source voltage Uds [V]: 30 v. Drain current Idss [A] @ Ug=0V: 25mA. Gate-source breakpoint voltage Ugss [V] @ Uds=0V: -2V @ +15V. Maximum dissipation Ptot [W]: 0.225W. Component family: N-Channel JFET Transistor. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

C(in): 4.5pF. Channel type: N. Type of transistor: JFET. Function: Uni sym. Idss (max): 9mA. IDss (min): 2mA. IGF: 10mA. Marking on the case: 61 S. Pd (Power Dissipation, Max): 2mA. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: general purpose JFET transistor. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Operating temperature: -55...+150°C. Voltage Vds(max): 25V. Gate/source voltage Vgs: 3.5V. Gate/source voltage (off) max.: 7V. Gate/source voltage (off) min.: 1V. Number of terminals: 3. Quantity per case: 1. Note: screen printing/SMD code 61S. Drain-source protection : no. G-S Protection: no

C(in): 5pF. Channel type: P. Type of transistor: JFET. Idss (max): 5mA. IDss (min): 1mA. IGF: 10mA. Marking on the case: 6E. Pd (Power Dissipation, Max): 225mW. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: J-FET Ampl.. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Voltage Vds(max): 40V. Gate/source voltage Vgs: 4 v. Vgs(th) min.: 6V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : no. G-S Protection: no

C(in): 5pF. Channel type: P. Type of transistor: JFET. Idss (max): 9mA. IDss (min): 2mA. IGF: 10mA. Marking on the case: 61U. Pd (Power Dissipation, Max): 225mW. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: J-FET Ampl.. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Operating temperature: -55...+150°C. Voltage Vds(max): 40V. Gate/source voltage Vgs: 4.5V. Vgs(th) min.: 7.5V. Number of terminals: 3. Quantity per case: 1. Spec info: screen printing/SMD code 61U. Drain-source protection : no. G-S Protection: no

C(in): 11pF. Channel type: P. Conditioning: roll. Quantity per case: 1. Type of transistor: JFET. Idss (max): 60mA. IDss (min): 7mA. IGF: 50mA. Marking on the case: 6W. Pd (Power Dissipation, Max): 225mW. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: P-Channel Switch. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Operating temperature: -55...+150°C. Voltage Vds(max): 30 v. Gate/source voltage (off) max.: 6V. Gate/source voltage (off) min.: 3V. Number of terminals: 3. Note: screen printing/SMD code 6W. Conditioning unit: 3000

Channel type: P. Conditioning: roll. Type of transistor: JFET. Idss (max): 20mA. IDss (min): 1.5mA. IGF: 50mA. Marking on the case: 6Y. Pd (Power Dissipation, Max): 225mW. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: P-Channel Switch. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Operating temperature: -55...+150°C. Voltage Vds(max): 25V. Gate/source voltage (off) max.: 2.5V. Gate/source voltage (off) min.: 0.8V. Number of terminals: 3. Quantity per case: 1. Note: screen printing/SMD code 6Y. Conditioning unit: 3000

RoHS: yes. Housing: PCB soldering (SMD). Housing: SOT-23. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 6Y. Drain-source voltage Uds [V]: -30V. Drain current Idss [A] @ Ug=0V: -20mA. Gate-source breakpoint voltage Ugss [V] @ Uds=0V: +2.5V @ -15V. Maximum dissipation Ptot [W]: 0.225W. Component family: P-Channel JFET Transistor. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

Channel type: N. Conditioning: roll. Type of transistor: JFET. Idss (max): 1mA. IDss (min): 0.2mA. IGF: 50mA. Marking on the case: 62 P. Pd (Power Dissipation, Max): 0.2mA. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Operating temperature: -55...+150°C. Voltage Vds(max): 40V. Gate/source voltage Vgs: 40V. Number of terminals: 3. Quantity per case: 1. Note: screen printing/SMD code 62P. Conditioning unit: 3000. Spec info: VGS(off) 0.3V...1.5V. Drain-source protection : no. G-S Protection: no

Channel type: N. Conditioning: roll. Type of transistor: FET. Function: VHF/UHF amplifier, oscillator and mixer. Idss (max): 30mA. IDss (min): 12mA. IGF: 10mA. Marking on the case: 6U. Pd (Power Dissipation, Max): 12mA. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Operating temperature: -55...+150°C. Voltage Vds(max): 25V. Number of terminals: 3. Quantity per case: 1. Note: screen printing/SMD code 6U. Conditioning unit: 3000. Spec info: Gate amplifier, 16dB at 100MHz and 12dB at 450MHz. Drain-source protection : no. G-S Protection: no

Channel type: N. Conditioning: roll. Type of transistor: FET. Function: VHF/UHF amplifier, oscillator and mixer. Idss (max): 60mA. IDss (min): 24mA. IGF: 10mA. Marking on the case: 6T. Pd (Power Dissipation, Max): 350mW. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Operating temperature: -55...+150°C. Voltage Vds(max): 25V. Number of terminals: 3. Quantity per case: 1. Note: screen printing/SMD code 6T. Conditioning unit: 3000. Spec info: Gate amplifier, 16dB at 100MHz and 12dB at 450MHz. Drain-source protection : no. G-S Protection: no

RoHS: yes. Housing: PCB soldering (SMD). Housing: SOT-23. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 6T. Drain-source voltage Uds [V]: 25V. Drain current Idss [A] @ Ug=0V: 60mA. Gate-source breakpoint voltage Ugss [V] @ Uds=0V: -2V @ +10V. Maximum dissipation Ptot [W]: 0.225W. Component family: N-Channel JFET Transistor. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

ROHS: Yes. Housing: SOT23. Frequency: 250MHz. Assembly/installation: SMD. Type of transistor: NPN. Polarity: bipolar. Voltage (collector - emitter): 40V. Collector current Ic [A]: 0.6A. Gain hfe: 35...300. Power: 0.25W

Cost): 5pF. Quantity per case: 1. Semiconductor material: silicon. FT: 250 MHz. Function: UNI. Minimum hFE gain: 100. Collector current: 0.6A. Marking on the case: 1 P. Number of terminals: 3. Pd (Power Dissipation, Max): 0.5W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Type of transistor: NPN. Vcbo: 40V. Collector/emitter voltage Vceo: 75V. Spec info: SMD 1P. BE diode: no. CE diode: no

RoHS: yes. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 1P. Collector-emitter voltage Uceo [V]: 40V. Collector current Ic [A], max.: 600mA. Cutoff frequency ft [MHz]: 300 MHz. Maximum dissipation Ptot [W]: 0.3W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: NPN transistor

RoHS: yes. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 1S. Collector-emitter voltage Uceo [V]: 15V. Collector current Ic [A], max.: 200mA. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.225W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: NPN transistor

ROHS: Yes. Housing: SOT23. Frequency: 200MHz. Assembly/installation: SMD. Type of transistor: PNP. Polarity: bipolar. Voltage (collector - emitter): 60V. Collector current Ic [A]: 0.6A. Gain hfe: 50...300. Power: 0.25W

RoHS: yes. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 2F. Collector-emitter voltage Uceo [V]: 60V. Collector current Ic [A], max.: 800mA. Cutoff frequency ft [MHz]: 200 MHz. Maximum dissipation Ptot [W]: 0.35W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: PNP transistor

Cost): 1.6pF. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Max hFE gain: 300. Minimum hFE gain: 100. Collector current: 0.6A. Ic(pulse): 1.2A. Marking on the case: 2F. Number of terminals: 3. Pd (Power Dissipation, Max): 225mW. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 60V. Saturation voltage VCE(sat): 0.4V. Collector/emitter voltage Vceo: 60V. Vebo: 5V. Spec info: SMD '2F'. BE diode: no. CE diode: no

RoHS: yes. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 1AM. Collector-emitter voltage Uceo [V]: 40V. Collector current Ic [A], max.: 200mA. Cutoff frequency ft [MHz]: 300 MHz. Maximum dissipation Ptot [W]: 0.35W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: NPN transistor

RoHS: yes. Resistor B: yes. BE resistor: PCB soldering (SMD). C(in): SOT-23. Cost): 1.6pF. Quantity per case: 1. Semiconductor material: silicon. FT: 300 MHz. Function: UNI. Max hFE gain: 300. Minimum hFE gain: 100. Collector current: 0.2A. Marking on the case: 1AM. Pd (Power Dissipation, Max): 0.2W. Assembly/installation: surface-mounted component (SMD). Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23. Type of transistor: NPN. Vcbo: 40V. Collector/emitter voltage Vceo: 60V. Spec info: SMD 1AM. BE diode: no. CE diode: no

ROHS: Yes. Housing: SOT23

RoHS: yes. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 2A. Collector-emitter voltage Uceo [V]: 40V. Collector current Ic [A], max.: 200mA. Cutoff frequency ft [MHz]: 250 MHz. Maximum dissipation Ptot [W]: 0.225W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: PNP transistor. Marking on the case: 2A. Number of terminals: 3. Pd (Power Dissipation, Max): 225mW. Assembly/installation: surface-mounted component (SMD). Tf(max): 75 ns. Tf(min): 35 ns. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 40V. Saturation voltage VCE(sat): 0.25V. Collector/emitter voltage Vceo: 40V. Vebo: 5V. Spec info: SMD 2A

Cost): 80pF. Conditioning: roll. Conditioning unit: 3000. Quantity per case: 1. Semiconductor material: silicon. FT: 250 MHz. Function: Switching Transistor. Max hFE gain: 300. Minimum hFE gain: 20. Collector current: 0.6A. Ic(pulse): 0.9A. Marking on the case: 2x. Number of terminals: 3. Pd (Power Dissipation, Max): 300mW. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Tf(max): 30 ns. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 60V. Saturation voltage VCE(sat): 0.4V. Collector/emitter voltage Vceo: 40V. Vebo: 6V. Spec info: screen printing/CMS code 2X. BE diode: no. CE diode: no

RoHS: yes. Housing: PCB soldering (SMD). Housing: SOT-23. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 2T. Collector-emitter voltage Uceo [V]: 40V. Collector current Ic [A], max.: 600mA. Cutoff frequency ft [MHz]: 200 MHz. Maximum dissipation Ptot [W]: 0.25W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: PNP transistor

Conditioning: roll. Conditioning unit: 3000. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Max hFE gain: 300. Minimum hFE gain: 30. Collector current: 0.6A. Marking on the case: 2T. Number of terminals: 3. Pd (Power Dissipation, Max): 0.3W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Tf(max): 30 ns. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 40V. Saturation voltage VCE(sat): 0.4V. Collector/emitter voltage Vceo: 40V. Vebo: 5V. BE diode: no. CE diode: no