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Semiconductors Transistors

MJL21195

MJL21195
[TITLE]
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 1 10.03$ 10.03$
2 - 2 9.53$ 9.53$
3 - 4 9.03$ 9.03$
5 - 9 8.53$ 8.53$
10 - 19 8.33$ 8.33$
20 - 29 8.13$ 8.13$
30+ 7.83$ 7.83$
Quantity U.P
1 - 1 10.03$ 10.03$
2 - 2 9.53$ 9.53$
3 - 4 9.03$ 9.03$
5 - 9 8.53$ 8.53$
10 - 19 8.33$ 8.33$
20 - 29 8.13$ 8.13$
30+ 7.83$ 7.83$
Delivery in 2-3 days, with postal tracking!
Out of stock
Set of 1

MJL21195. C(in): 30pF. Cost): 8pF. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: hFE=25 Min @ IC=8Adc. Max hFE gain: 100. Minimum hFE gain: 25. Collector current: 16A. Ic(pulse): 30A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 400V. Saturation voltage VCE(sat): 1.4V. Collector/emitter voltage Vceo: 250V. Vebo: 5V. Spec info: complementary transistor (pair) MJL21196. BE diode: no. CE diode: no. Quantity in stock updated on 15/01/2025, 19:25.

Technical documentation

Equivalent products :

Quantity in stock : 103
MJ21195

MJ21195

Cost): 4pF. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 4...
MJ21195
Cost): 4pF. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Max hFE gain: 75. Minimum hFE gain: 25. Collector current: 16A. Ic(pulse): 30A. Number of terminals: 2. Pd (Power Dissipation, Max): 250W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3 ( TO-204AA ). Type of transistor: PNP. Vcbo: 400V. Saturation voltage VCE(sat): 1.4V. Collector/emitter voltage Vceo: 250V. Spec info: complementary transistor (pair) MJ21196. BE diode: no. CE diode: no
MJ21195
Cost): 4pF. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Max hFE gain: 75. Minimum hFE gain: 25. Collector current: 16A. Ic(pulse): 30A. Number of terminals: 2. Pd (Power Dissipation, Max): 250W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3 ( TO-204AA ). Type of transistor: PNP. Vcbo: 400V. Saturation voltage VCE(sat): 1.4V. Collector/emitter voltage Vceo: 250V. Spec info: complementary transistor (pair) MJ21196. BE diode: no. CE diode: no
Set of 1
14.17$ VAT incl.
(14.17$ excl. VAT)
14.17$
Quantity in stock : 157
MJW21195

MJW21195

Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: Excellent Gain Linearity...
MJW21195
Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: Excellent Gain Linearity. Production date: 2015/04. Max hFE gain: 80. Minimum hFE gain: 20. Collector current: 16A. Ic(pulse): 30A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-247. Housing (according to data sheet): TO-247. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 400V. Saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 250V. Vebo: 5V. Spec info: complementary transistor (pair) MJW21196. BE diode: no. CE diode: no
MJW21195
Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: Excellent Gain Linearity. Production date: 2015/04. Max hFE gain: 80. Minimum hFE gain: 20. Collector current: 16A. Ic(pulse): 30A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-247. Housing (according to data sheet): TO-247. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 400V. Saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 250V. Vebo: 5V. Spec info: complementary transistor (pair) MJW21196. BE diode: no. CE diode: no
Set of 1
7.89$ VAT incl.
(7.89$ excl. VAT)
7.89$

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IRF3205

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