Transistors

Quantity per case: 1. Semiconductor material: silicon. FT: 14 MHz. Function: SMPS. Collector current: 6A. Pd (Power Dissipation, Max): 100W. Type of transistor: NPN. Vcbo: 1000V. Collector/emitter voltage Vceo: 450V. Spec info: SWITCHMODE. BE diode: no. CE diode: no

C(in): 1750pF. Cost): 100pF. Quantity per case: 1. Semiconductor material: silicon. FT: 13MHz. Function: Switching mode Power Supply Applications. Max hFE gain: 14. Minimum hFE gain: 34. Collector current: 8A. Ic(pulse): 16A. Pd (Power Dissipation, Max): 120W. RoHS: yes. Housing: TO-220. Housing (according to data sheet): TO-220AB. Type of transistor: NPN. Operating temperature: -60...+150°C. Vcbo: 1000V. Saturation voltage VCE(sat): 0.3V. Maximum saturation voltage VCE(sat): 0.6V. Collector/emitter voltage Vceo: 450V. BE diode: no. CE diode: no

Type of transistor: Power Transistor. Polarity: NPN. Applications: switching. Collector-Emitter Voltage VCEO: 1000V. Collector current: 8A. Power: 120W. Housing: TO-220

Cost): 80pF. Quantity per case: 1. Semiconductor material: silicon. FT: 65MHz. Max hFE gain: 180. Minimum hFE gain: 45. Collector current: 5A. Pd (Power Dissipation, Max): 15W. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-225. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 25V. Saturation voltage VCE(sat): 0.3V. Maximum saturation voltage VCE(sat): 1.8V. Collector/emitter voltage Vceo: 40V. Vebo: 8V. Spec info: complementary transistor (pair) MJE210. Housing: TO-126 (TO-225, SOT-32). BE diode: no. CE diode: no

Cost): 120pF. Quantity per case: 1. Semiconductor material: silicon. FT: 65MHz. Collector current: 5A. Pd (Power Dissipation, Max): 15W. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-225. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 25V. Saturation voltage VCE(sat): 0.3V. Maximum saturation voltage VCE(sat): 1.8V. Collector/emitter voltage Vceo: 40V. Vebo: 8V. Spec info: complementary transistor (pair) MJE200. Housing: TO-126 (TO-225, SOT-32). BE diode: no. CE diode: no

Collector current: 4A. Resistor B: NPN power transistor. BE resistor: 100V. C(in): 4A. Cost): 15W. Quantity per case: 1. Semiconductor material: silicon. FT: 40 MHz. Function: High speed switching. Audio. Max hFE gain: 180. Minimum hFE gain: 40. Ic(pulse): 8A. Number of terminals: 3. Pd (Power Dissipation, Max): 15W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-225. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 100V. Saturation voltage VCE(sat): 0.3V. Collector/emitter voltage Vceo: 100V. Vebo: 7V. Spec info: complementary transistor (pair) MJE253. Housing: TO-126 (TO-225, SOT-32). BE diode: no. CE diode: no

Type of transistor: Power Transistor. Polarity: PNP. Collector-Emitter Voltage VCEO: -100V. Collector current: -4A. Power: 15W. Max frequency: 40 MHz. Housing: TO-126. Semiconductor material: silicon. FT: 40 MHz. Function: High speed switching. Audio. Max hFE gain: 180. Minimum hFE gain: 40. Collector current: 4A. Ic(pulse): 8A. Number of terminals: 3. Pd (Power Dissipation, Max): 15W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-225. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 100V. Saturation voltage VCE(sat): 0.3V. Collector/emitter voltage Vceo: 100V. Vebo: 7V. Spec info: complementary transistor (pair) MJE243. Housing: TO-126 (TO-225, SOT-32)

Housing: TO-220. Resistor B: Power Transistor. BE resistor: -70V. C(in): -10A. Cost): 90W. Quantity per case: 1. Semiconductor material: silicon. FT: 2 MHz. Function: NF-L. Max hFE gain: 70. Minimum hFE gain: 20. Collector current: 10A. Ic(pulse): +150°C. Number of terminals: 3. Pd (Power Dissipation, Max): 75W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial-Base'. Housing (according to data sheet): TO-220AB. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 70V. Saturation voltage VCE(sat): 1.1V. Maximum saturation voltage VCE(sat): 8V. Collector/emitter voltage Vceo: 60V. Vebo: 5V. Spec info: complementary transistor (pair) MJE3055T. BE diode: no. CE diode: no

Quantity per case: 1. Semiconductor material: silicon. FT: 2 MHz. Function: for Hi-fi audio amplifiers and switching regulators. Max hFE gain: 100. Minimum hFE gain: 20. Collector current: 10A. Number of terminals: 3. Pd (Power Dissipation, Max): 75W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial-Base'. Housing: TO-220. Housing (according to data sheet): TO-220AB. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 70V. Saturation voltage VCE(sat): 1.1V. Maximum saturation voltage VCE(sat): 8V. Collector/emitter voltage Vceo: 60V. Vebo: 5V. Spec info: complementary transistor (pair) MJE3055T. BE diode: no. CE diode: no

RoHS: yes. Housing: PCB soldering. Housing: TO-220. Housing (JEDEC standard): TO-220. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MJE2955TG. Collector-emitter voltage Uceo [V]: 60V. Collector current Ic [A], max.: 10A. Cutoff frequency ft [MHz]: 2 MHz. Maximum dissipation Ptot [W]: 75W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: PNP power transistor

RoHS: yes. Housing: PCB soldering. Housing: TO-220AB. Housing (JEDEC standard): TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MJE3055T. Collector-emitter voltage Uceo [V]: 60V. Collector current Ic [A], max.: 10A. Cutoff frequency ft [MHz]: 2 MHz. Maximum dissipation Ptot [W]: 75W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: NPN power transistor. Collector current: 10A. Number of terminals: 3. Pd (Power Dissipation, Max): 75W. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial-Base'. Housing: TO-220. Housing (according to data sheet): TO-220AB. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 70V. Saturation voltage VCE(sat): 1.1V. Collector/emitter voltage Vceo: 60V. Vebo: 5V. Spec info: complementary transistor (pair) MJE2955T

Quantity per case: 1. Semiconductor material: silicon. FT: 2 MHz. Function: for Hi-fi audio amplifiers and switching regulators. Max hFE gain: 100. Minimum hFE gain: 20. Collector current: 10A. Number of terminals: 3. Pd (Power Dissipation, Max): 75W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial-Base'. Housing: TO-220. Housing (according to data sheet): TO-220AB. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 70V. Saturation voltage VCE(sat): 1.1V. Maximum saturation voltage VCE(sat): 8V. Collector/emitter voltage Vceo: 60V. Vebo: 5V. Spec info: complementary transistor (pair) MJE3055T. BE diode: no. CE diode: no

Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 1. Semiconductor material: silicon. FT: 2 MHz. Function: NF-L. Max hFE gain: 70. Minimum hFE gain: 20. Collector current: 10A. Number of terminals: 3. Pd (Power Dissipation, Max): 75W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial-Base'. Housing: TO-220. Housing (according to data sheet): TO-220AB. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 70V. Saturation voltage VCE(sat): 1.1V. Collector/emitter voltage Vceo: 60V. Vebo: 5V. Spec info: complementary transistor (pair) MJE2955T. BE diode: no. CE diode: no

RoHS: yes. Housing: PCB soldering. Housing: SOT-32. Housing (JEDEC standard): TO-126. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MJE340. Collector-emitter voltage Uceo [V]: 300V. Collector current Ic [A], max.: 500mA. Maximum dissipation Ptot [W]: 20W. Component family: high voltage NPN transistor. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Cutoff frequency ft [MHz]: 240. Number of terminals: 3. Pd (Power Dissipation, Max): 20W. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-126. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 300V. Collector/emitter voltage Vceo: 300V. Vebo: 3V. Spec info: complementary transistor (pair) MJE350. Housing: TO-126 (TO-225, SOT-32)

Cost): 30pF. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Function: NF-L, VID.. Collector current: 0.5A. Equivalents: KSE340. Pd (Power Dissipation, Max): 20.8W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-126 ( TO-225 ). Type of transistor: NPN. Vcbo: 300V. Collector/emitter voltage Vceo: 500V. Spec info: complementary transistor (pair) MJE350. Housing: TO-126 (TO-225, SOT-32). BE diode: no. CE diode: no

Cost): 30pF. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Function: NF-L. Max hFE gain: 240. Minimum hFE gain: 30. Collector current: 0.5A. Note: plastic housing. Number of terminals: 3. Pd (Power Dissipation, Max): 20.8W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-126F. Housing (according to data sheet): TO-225. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 300V. Maximum saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 300V. Vebo: 3V. Spec info: complementary transistor (pair) MJE350. BE diode: no. CE diode: no

RoHS: yes. Housing: PCB soldering. Housing: TO-225. Housing (JEDEC standard): TO-225. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MJE340G. Collector-emitter voltage Uceo [V]: 300V. Collector current Ic [A], max.: 500mA. Maximum dissipation Ptot [W]: 20W. Component family: high voltage NPN transistor. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

Number of terminals: 3. Manufacturer's marking: MJE350. Collector-emitter voltage Uceo [V]: 300V. Collector current Ic [A], max.: 500mA. Maximum dissipation Ptot [W]: 20W. Type of transistor: Power Transistor. Polarity: PNP. Collector-Emitter Voltage VCEO: -300V. Collector current: -0.5A. Power: 20.8W. Housing: TO-126. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Cutoff frequency ft [MHz]: 240. Number of terminals: 3. Pd (Power Dissipation, Max): 20W. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-126. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 300V. Collector/emitter voltage Vceo: 300V. Vebo: 3V. Spec info: complementary transistor (pair) MJE340. Housing: TO-126 (TO-225, SOT-32)

C(in): 7pF. Cost): 110pF. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Max hFE gain: 240. Minimum hFE gain: 30. Collector current: 0.5A. Equivalents: KSE350. Pd (Power Dissipation, Max): 20.8W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-225. Type of transistor: PNP. Operating temperature: -65...+150°C. Collector/emitter voltage Vceo: 300V. Vebo: 3V. Spec info: complementary transistor (pair) MJE340. Housing: TO-126 (TO-225, SOT-32). BE diode: no. CE diode: no

Cost): 30pF. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Function: NF-L. Max hFE gain: 240. Minimum hFE gain: 30. Collector current: 0.5A. Note: plastic housing. Number of terminals: 3. Pd (Power Dissipation, Max): 20.8W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-126F. Housing (according to data sheet): TO-225. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 300V. Maximum saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 300V. Vebo: 3V. Spec info: complementary transistor (pair) MJE340. BE diode: no. CE diode: no

Manufacturer's marking: MJE350G. Collector-emitter voltage Uceo [V]: 300V. Collector current Ic [A], max.: 500mA. Maximum dissipation Ptot [W]: 20W. Type of transistor: Power Transistor. Polarity: PNP. Collector-Emitter Voltage VCEO: -300V. Collector current: -0.5A. Power: 20W. Max frequency: 10MHz. Housing: TO-126. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

BE resistor: 100 Ohms (R1), 50 Ohms (R2). Conditioning: plastic tube. Conditioning unit: 50. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. Max hFE gain: 400. Minimum hFE gain: 50. Collector current: 8A. Number of terminals: 3. Pd (Power Dissipation, Max): 80W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(min): 2us. Housing: TO-220. Housing (according to data sheet): TO-220AB. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 400V. Saturation voltage VCE(sat): 2V. Collector/emitter voltage Vceo: 800V. BE diode: no. CE diode: yes

Type of transistor: Darlington Power Transistor. Polarity: NPN. Type: Darlington transistor. Collector-Emitter Voltage VCEO: 400V. Collector current: 8A. Power: 100W. Housing: TO-220

Quantity per case: 1. Semiconductor material: silicon. Function: S-L. Collector current: 8A. Pd (Power Dissipation, Max): 80W. Type of transistor: PNP. Vcbo: 450V. Collector/emitter voltage Vceo: 400V. BE diode: no. CE diode: yes

RoHS: yes. Housing: PCB soldering. Housing: TO-220. Housing (JEDEC standard): TO-220. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MJE5852G. Collector-emitter voltage Uceo [V]: 400V. Collector current Ic [A], max.: 8A. Maximum dissipation Ptot [W]: 80W. Component family: high voltage PNP transistor. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C