Transistors

RoHS: yes. Housing: PCB soldering. Housing: SOT-32. Housing (JEDEC standard): TO-126. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MJE340. Collector-emitter voltage Uceo [V]: 300V. Collector current Ic [A], max.: 500mA. Maximum dissipation Ptot [W]: 20W. Component family: high voltage NPN transistor. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Cutoff frequency ft [MHz]: 240. Number of terminals: 3. Pd (Power Dissipation, Max): 20W. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-126. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 300V. Collector/emitter voltage Vceo: 300V. Vebo: 3V. Spec info: complementary transistor (pair) MJE350. Housing: TO-126 (TO-225, SOT-32)

Cost): 30pF. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Function: NF-L, VID.. Collector current: 0.5A. Equivalents: KSE340. Pd (Power Dissipation, Max): 20.8W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-126 ( TO-225 ). Type of transistor: NPN. Vcbo: 300V. Collector/emitter voltage Vceo: 500V. Spec info: complementary transistor (pair) MJE350. Housing: TO-126 (TO-225, SOT-32). BE diode: no. CE diode: no

Cost): 30pF. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Function: NF-L. Max hFE gain: 240. Minimum hFE gain: 30. Collector current: 0.5A. Note: plastic housing. Number of terminals: 3. Pd (Power Dissipation, Max): 20.8W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-126F. Housing (according to data sheet): TO-225. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 300V. Maximum saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 300V. Vebo: 3V. Spec info: complementary transistor (pair) MJE350. BE diode: no. CE diode: no

RoHS: yes. Housing: PCB soldering. Housing: TO-225. Housing (JEDEC standard): TO-225. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MJE340G. Collector-emitter voltage Uceo [V]: 300V. Collector current Ic [A], max.: 500mA. Maximum dissipation Ptot [W]: 20W. Component family: high voltage NPN transistor. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

Number of terminals: 3. Manufacturer's marking: MJE350. Collector-emitter voltage Uceo [V]: 300V. Collector current Ic [A], max.: 500mA. Maximum dissipation Ptot [W]: 20W. Type of transistor: Power Transistor. Polarity: PNP. Collector-Emitter Voltage VCEO: -300V. Collector current: -0.5A. Power: 20.8W. Housing: TO-126. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Cutoff frequency ft [MHz]: 240. Number of terminals: 3. Pd (Power Dissipation, Max): 20W. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-126. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 300V. Collector/emitter voltage Vceo: 300V. Vebo: 3V. Spec info: complementary transistor (pair) MJE340. Housing: TO-126 (TO-225, SOT-32)

C(in): 7pF. Cost): 110pF. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Max hFE gain: 240. Minimum hFE gain: 30. Collector current: 0.5A. Equivalents: KSE350. Pd (Power Dissipation, Max): 20.8W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-225. Type of transistor: PNP. Operating temperature: -65...+150°C. Collector/emitter voltage Vceo: 300V. Vebo: 3V. Spec info: complementary transistor (pair) MJE340. Housing: TO-126 (TO-225, SOT-32). BE diode: no. CE diode: no

Cost): 30pF. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Function: NF-L. Max hFE gain: 240. Minimum hFE gain: 30. Collector current: 0.5A. Note: plastic housing. Number of terminals: 3. Pd (Power Dissipation, Max): 20.8W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-126F. Housing (according to data sheet): TO-225. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 300V. Maximum saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 300V. Vebo: 3V. Spec info: complementary transistor (pair) MJE340. BE diode: no. CE diode: no

Manufacturer's marking: MJE350G. Collector-emitter voltage Uceo [V]: 300V. Collector current Ic [A], max.: 500mA. Maximum dissipation Ptot [W]: 20W. Type of transistor: Power Transistor. Polarity: PNP. Collector-Emitter Voltage VCEO: -300V. Collector current: -0.5A. Power: 20W. Max frequency: 10MHz. Housing: TO-126. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

BE resistor: 100 Ohms (R1), 50 Ohms (R2). Conditioning: plastic tube. Conditioning unit: 50. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. Max hFE gain: 400. Minimum hFE gain: 50. Collector current: 8A. Number of terminals: 3. Pd (Power Dissipation, Max): 80W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(min): 2us. Housing: TO-220. Housing (according to data sheet): TO-220AB. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 400V. Saturation voltage VCE(sat): 2V. Collector/emitter voltage Vceo: 800V. BE diode: no. CE diode: yes

Type of transistor: Darlington Power Transistor. Polarity: NPN. Type: Darlington transistor. Collector-Emitter Voltage VCEO: 400V. Collector current: 8A. Power: 100W. Housing: TO-220

Quantity per case: 1. Semiconductor material: silicon. Function: S-L. Collector current: 8A. Pd (Power Dissipation, Max): 80W. Type of transistor: PNP. Vcbo: 450V. Collector/emitter voltage Vceo: 400V. BE diode: no. CE diode: yes

RoHS: yes. Housing: PCB soldering. Housing: TO-220. Housing (JEDEC standard): TO-220. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MJE5852G. Collector-emitter voltage Uceo [V]: 400V. Collector current Ic [A], max.: 8A. Maximum dissipation Ptot [W]: 80W. Component family: high voltage PNP transistor. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

Type of transistor: Darlington Power Transistor. Polarity: PNP. Type: Darlington transistor. Collector-Emitter Voltage VCEO: -80V. Collector current: -4A. Power: 40W. Max frequency: 1MHz. Housing: TO-126. DC Collector/Base Gain hFE min.: 750

Cost): 1000pF. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Collector current: 1.5A. Pd (Power Dissipation, Max): 20W. Type of transistor: NPN. Collector/emitter voltage Vceo: 45V. BE diode: no. CE diode: no

Cost): 1000pF. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Collector current: 1.5A. Pd (Power Dissipation, Max): 20W. Type of transistor: NPN. Collector/emitter voltage Vceo: 60V. BE diode: no. CE diode: no

RoHS: yes. Housing: PCB soldering. Housing: TO-225. Housing (JEDEC standard): TO-225. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MJE800G. Collector-emitter voltage Uceo [V]: 60V. Collector current Ic [A], max.: 4A. Maximum dissipation Ptot [W]: 40W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: NPN power transistor

RoHS: no. Housing: PCB soldering. Housing: TO-225. Housing (JEDEC standard): TO-225. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MJE803. Collector-emitter voltage Uceo [V]: 80V. Collector current Ic [A], max.: 4A. Maximum dissipation Ptot [W]: 40W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: NPN power transistor

Type of transistor: Power Transistor. Polarity: NPN. Applications: switching. Collector-Emitter Voltage VCEO: 1000V. Collector current: 5A. Power: 35W. Max frequency: 13MHz. Housing: TO-220-F

Cost): 80pF. Quantity per case: 1. Semiconductor material: silicon. Function: (F). Collector current: 8A. Pd (Power Dissipation, Max): 45W. Assembly/installation: PCB through-hole mounting. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Type of transistor: NPN. Vcbo: 1000V. Collector/emitter voltage Vceo: 450V. BE diode: no. CE diode: no

BE resistor: 50. Cost): 156pF. Quantity per case: 1. Semiconductor material: silicon. FT: 13 MHz. Function: switching circuits. Max hFE gain: 35. Minimum hFE gain: 18. Collector current: 5A. Ic(pulse): 10A. Number of terminals: 3. Pd (Power Dissipation, Max): 35W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 175 ns. Tf(min): 110 ns. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Type of transistor: NPN. Operating temperature: -65...+175°C. Vcbo: 1200V. Saturation voltage VCE(sat): 0.83V. Collector/emitter voltage Vceo: 600V. Vebo: 10V. BE diode: no. CE diode: yes

Cost): 1.7pF. Conditioning: plastic tube. Conditioning unit: 25. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: hFE 45(min). Max hFE gain: 150. Minimum hFE gain: 45. Collector current: 15A. Ic(pulse): 25A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 260V. Saturation voltage VCE(sat): 3V. Collector/emitter voltage Vceo: 260V. Vebo: 5V. Spec info: complementary transistor (pair) MJL3281A. BE diode: no. CE diode: no

Cost): 2.3pF. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: NF-L, TO-264. Collector current: 15A. Pd (Power Dissipation, Max): 170W. Type of transistor: NPN. Vcbo: 1500V. Collector/emitter voltage Vceo: 650V. Spec info: TO-3PBL. BE diode: no. CE diode: no

Cost): 500pF. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: hFE=25 Min @ IC =8Adc. Max hFE gain: 75. Minimum hFE gain: 25. Collector current: 16A. Ic(pulse): 30A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO–3PBL. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 400V. Saturation voltage VCE(sat): 1.4V. Collector/emitter voltage Vceo: 250V. Vebo: 5V. Spec info: complementary transistor (pair) MJL21194. BE diode: no. CE diode: no

Cost): 6pF. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: hFE=25 Min @ IC=8Adc. Max hFE gain: 75. Minimum hFE gain: 25. Collector current: 16A. Ic(pulse): 30A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial-Base'. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO–3PBL. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 400V. Saturation voltage VCE(sat): 1.4V. Collector/emitter voltage Vceo: 250V. Vebo: 5V. Spec info: complementary transistor (pair) MJL21193. BE diode: no. CE diode: no

Type of transistor: NPN transistor. Polarity: NPN. Function: HI-FI Power Amplifier. Collector-Emitter Voltage VCEO: 250V. Collector current: 16A. Power: 200W. Housing: TO-264