MJW1302AG

Quantity	excl. VAT	VAT incl.
1 - 1	8.13$	8.13$
2 - 2	7.73$	7.73$
3 - 4	7.32$	7.32$
5 - 9	6.91$	6.91$
10 - 19	6.75$	6.75$
20 - 29	6.59$	6.59$
30 - 57	6.34$	6.34$

Quantity	U.P
1 - 1	8.13$	8.13$
2 - 2	7.73$	7.73$
3 - 4	7.32$	7.32$
5 - 9	6.91$	6.91$
10 - 19	6.75$	6.75$
20 - 29	6.59$	6.59$
30 - 57	6.34$	6.34$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 57

Set of 1

MJW1302AG. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: Complementary Bipolar Power Transistor. Production date: 201446. Max hFE gain: 200. Minimum hFE gain: 50. Collector current: 15A. Ic(pulse): 25A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-247. Housing (according to data sheet): TO-247. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 230V. Saturation voltage VCE(sat): 0.4V. Collector/emitter voltage Vceo: 230V. Vebo: 5V. Technology: Power Bipolar Transistor. Spec info: complementary transistor (pair) MJW3281A. BE diode: no. CE diode: no. Quantity in stock updated on 25/12/2024, 17:25.

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Delivery in 2-3 days, with postal tracking!